# YJS12G10A

**Yangzhou Yangjie Elec Tech** · MOSFETs · SOP-8

YJS12G10A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, shared with pins 2 and 3; the device is rated for 12A continuous drain current at TA=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 3; the device is rated for 12A continuous drain current at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 2; the device is rated for 12A continuous drain current at TA=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET with a maximum gate-source voltage of ±20V and a threshold of 2.0 to 4.0V at ID=250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET, shared with pins 6, 7 and 8; the maximum drain-source voltage is 100V. |
| 6 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 7 and 8; the maximum drain-source voltage is 100V. |
| 7 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 6 and 8; the maximum drain-source voltage is 100V. |
| 8 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 6 and 7; the maximum drain-source voltage is 100V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS |  |  | 100 | V |  | 1 |
| Gate-source voltage | VGS | -20 |  | 20 | V | Printed as ±20 V | 1 |
| Drain current | ID |  |  | 12 | A | TA=25℃ | 1 |
| Drain current | ID |  |  | 7.5 | A | TA =100℃ | 1 |
| Pulsed drain current | IDM |  |  | 70 | A |  | 1 |
| Avalanche energy, single pulse | EAS |  |  | 80 | mJ | L=0.5mH | 1 |
| Total power dissipation | PD |  |  | 3.1 | W |  | 1 |
| Junction and storage temperature range | TJ,TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal resistance junction-to-ambient, t≤10s | RθJA |  | 31 | 40 | ℃/W | t≤10S | 1 |
| Thermal resistance junction-to-ambient, steady-state | RθJA |  | 59 | 75 | ℃/W | Steady-State | 1 |
| Thermal resistance junction-to-lead, steady-state | RθJL |  | 16 | 24 | ℃/W | Steady-State | 1 |
| Drain-source breakdown voltage | BVDSS | 100 |  |  | V | VGS= 0V, ID=250μA | 2 |
| Zero gate voltage drain current | IDSS |  |  | 1 | μA | VDS=100V,VGS=0V, TJ=25℃ | 2 |
| Gate-body leakage current | IGSS | -100 |  | 100 | nA | VGS= ±20V, VDS=0V | 2 |
| Gate threshold voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS= VGS, ID=250μA | 2 |
| Static drain-source on-resistance | RDS(ON) |  | 14.5 | 17 | mΩ | VGS=10V, ID=10A | 2 |
| Diode forward voltage | VSD |  |  | 1.3 | V | IS=12A,VGS=0V | 2 |
| Maximum body-diode continuous current | IS |  |  | 12 | A |  | 2 |
| Gate resistance | RG |  | 1 |  | Ω | f=1MHz, Open drain | 2 |
| Input capacitance | Ciss |  | 1135 |  | pF | VDS=50V,VGS=0V,f=1MHZ | 2 |
| Output capacitance | Coss |  | 399 |  | pF | VDS=50V,VGS=0V,f=1MHZ | 2 |
| Reverse transfer capacitance | Crss |  | 18 |  | pF | VDS=50V,VGS=0V,f=1MHZ | 2 |
| Total gate charge | Qg |  | 16 |  | nC | VGS=10V,VDS=50V,ID=10A | 2 |
| Gate-source charge | Qgs |  | 5.6 |  | nC | VGS=10V,VDS=50V,ID=10A | 2 |
| Gate-drain charge | Qgd |  | 2.4 |  | nC | VGS=10V,VDS=50V,ID=10A | 2 |
| Reverse recovery charge | Qrr |  | 42 |  | nC | IF=10A, di/dt=100A/us | 2 |
| Reverse recovery time | trr |  | 39.8 |  | ns | IF=10A, di/dt=100A/us | 2 |
| Turn-on delay time | tD(on) |  | 39.2 |  | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |
| Turn-on rise time | tr |  | 11 |  | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |
| Turn-off delay time | tD(off) |  | 53.2 |  | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |
| Turn-off fall time | tf |  | 15.8 |  | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |

## CAD (KiCad official)

- Symbol: `YJS12G10A`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `yjs12g10a-etched.step` / `yjs12g10a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjs12g10a.step` / `yjs12g10a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588918604548595712) (6 pp, sha256 `db61c25d7a548ed4`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjs12g10a-datasheet.pdf)