component
YJS12G10A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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yjs12g10a: specified limits as data (metadata.characteristics, 31 rows from the datasheet)
2 files changed
+418−1
README.md+38@@ -26,6 +26,44 @@ YJS12G10A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-source voltage | VDS | | | 100 | V | | 1 |+| Gate-source voltage | VGS | -20 | | 20 | V | Printed as ±20 V | 1 |+| Drain current | ID | | | 12 | A | TA=25℃ | 1 |+| Drain current | ID | | | 7.5 | A | TA =100℃ | 1 |+| Pulsed drain current | IDM | | | 70 | A | | 1 |+| Avalanche energy, single pulse | EAS | | | 80 | mJ | L=0.5mH | 1 |+| Total power dissipation | PD | | | 3.1 | W | | 1 |+| Junction and storage temperature range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal resistance junction-to-ambient, t≤10s | RθJA | | 31 | 40 | ℃/W | t≤10S | 1 |+| Thermal resistance junction-to-ambient, steady-state | RθJA | | 59 | 75 | ℃/W | Steady-State | 1 |+| Thermal resistance junction-to-lead, steady-state | RθJL | | 16 | 24 | ℃/W | Steady-State | 1 |+| Drain-source breakdown voltage | BVDSS | 100 | | | V | VGS= 0V, ID=250μA | 2 |+| Zero gate voltage drain current | IDSS | | | 1 | μA | VDS=100V,VGS=0V, TJ=25℃ | 2 |+| Gate-body leakage current | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS=0V | 2 |+| Gate threshold voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS= VGS, ID=250μA | 2 |+| Static drain-source on-resistance | RDS(ON) | | 14.5 | 17 | mΩ | VGS=10V, ID=10A | 2 |+| Diode forward voltage | VSD | | | 1.3 | V | IS=12A,VGS=0V | 2 |+| Maximum body-diode continuous current | IS | | | 12 | A | | 2 |+| Gate resistance | RG | | 1 | | Ω | f=1MHz, Open drain | 2 |+| Input capacitance | Ciss | | 1135 | | pF | VDS=50V,VGS=0V,f=1MHZ | 2 |+| Output capacitance | Coss | | 399 | | pF | VDS=50V,VGS=0V,f=1MHZ | 2 |+| Reverse transfer capacitance | Crss | | 18 | | pF | VDS=50V,VGS=0V,f=1MHZ | 2 |+| Total gate charge | Qg | | 16 | | nC | VGS=10V,VDS=50V,ID=10A | 2 |+| Gate-source charge | Qgs | | 5.6 | | nC | VGS=10V,VDS=50V,ID=10A | 2 |+| Gate-drain charge | Qgd | | 2.4 | | nC | VGS=10V,VDS=50V,ID=10A | 2 |+| Reverse recovery charge | Qrr | | 42 | | nC | IF=10A, di/dt=100A/us | 2 |+| Reverse recovery time | trr | | 39.8 | | ns | IF=10A, di/dt=100A/us | 2 |+| Turn-on delay time | tD(on) | | 39.2 | | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |+| Turn-on rise time | tr | | 11 | | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |+| Turn-off delay time | tD(off) | | 53.2 | | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |+| Turn-off fall time | tf | | 15.8 | | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |+ ## CAD (KiCad official) - Symbol: `YJS12G10A`
page.json+380−1@@ -178,6 +178,385 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "db61c25d7a548ed4",+ "rows": [+ {+ "name": "Drain-source voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "Printed as ±20 V",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.5,+ "conditions": "TA =100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed drain current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 70,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "L=0.5mH",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total power dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and storage temperature range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-to-ambient, t≤10s",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 31,+ "max": 40,+ "conditions": "t≤10S",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-to-ambient, steady-state",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 59,+ "max": 75,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-to-lead, steady-state",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-source breakdown voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS= 0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage drain current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=100V,VGS=0V, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-body leakage current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS= ±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate threshold voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 2.8,+ "max": 4,+ "conditions": "VDS= VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static drain-source on-resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 14.5,+ "max": 17,+ "conditions": "VGS=10V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "IS=12A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum body-diode continuous current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "f=1MHz, Open drain",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 1135,+ "max": null,+ "conditions": "VDS=50V,VGS=0V,f=1MHZ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 399,+ "max": null,+ "conditions": "VDS=50V,VGS=0V,f=1MHZ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse transfer capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 18,+ "max": null,+ "conditions": "VDS=50V,VGS=0V,f=1MHZ",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total gate charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "VGS=10V,VDS=50V,ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-source charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.6,+ "max": null,+ "conditions": "VGS=10V,VDS=50V,ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-drain charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.4,+ "max": null,+ "conditions": "VGS=10V,VDS=50V,ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 42,+ "max": null,+ "conditions": "IF=10A, di/dt=100A/us",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse recovery time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 39.8,+ "max": null,+ "conditions": "IF=10A, di/dt=100A/us",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on delay time",+ "symbol": "tD(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 39.2,+ "max": null,+ "conditions": "VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-on rise time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 11,+ "max": null,+ "conditions": "VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off delay time",+ "symbol": "tD(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 53.2,+ "max": null,+ "conditions": "VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-off fall time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 15.8,+ "max": null,+ "conditions": "VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -219,4 +598,4 @@ "visibility": { "public": true }-}+}