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YJS12G10A

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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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YJS12G10A

Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8

YJS12G10A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, shared with pins 2 and 3; the device is rated for 12A continuous drain current at TA=25℃.
2 S passive Source of the N-channel MOSFET, shared with pins 1 and 3; the device is rated for 12A continuous drain current at TA=25℃.
3 S passive Source of the N-channel MOSFET, shared with pins 1 and 2; the device is rated for 12A continuous drain current at TA=25℃.
4 G input Gate of the N-channel MOSFET with a maximum gate-source voltage of ±20V and a threshold of 2.0 to 4.0V at ID=250μA.
5 D passive Drain of the N-channel MOSFET, shared with pins 6, 7 and 8; the maximum drain-source voltage is 100V.
6 D passive Drain of the N-channel MOSFET, shared with pins 5, 7 and 8; the maximum drain-source voltage is 100V.
7 D passive Drain of the N-channel MOSFET, shared with pins 5, 6 and 8; the maximum drain-source voltage is 100V.
8 D passive Drain of the N-channel MOSFET, shared with pins 5, 6 and 7; the maximum drain-source voltage is 100V.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source voltage VDS 100 V 1
Gate-source voltage VGS -20 20 V Printed as ±20 V 1
Drain current ID 12 A TA=25℃ 1
Drain current ID 7.5 A TA =100℃ 1
Pulsed drain current IDM 70 A 1
Avalanche energy, single pulse EAS 80 mJ L=0.5mH 1
Total power dissipation PD 3.1 W 1
Junction and storage temperature range TJ,TSTG -55 150 ℃ 1
Thermal resistance junction-to-ambient, t≤10s RθJA 31 40 ℃/W t≤10S 1
Thermal resistance junction-to-ambient, steady-state RθJA 59 75 ℃/W Steady-State 1
Thermal resistance junction-to-lead, steady-state RθJL 16 24 ℃/W Steady-State 1
Drain-source breakdown voltage BVDSS 100 V VGS= 0V, ID=250μA 2
Zero gate voltage drain current IDSS 1 μA VDS=100V,VGS=0V, TJ=25℃ 2
Gate-body leakage current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate threshold voltage VGS(th) 2 2.8 4 V VDS= VGS, ID=250μA 2
Static drain-source on-resistance RDS(ON) 14.5 17 mΩ VGS=10V, ID=10A 2
Diode forward voltage VSD 1.3 V IS=12A,VGS=0V 2
Maximum body-diode continuous current IS 12 A 2
Gate resistance RG 1 Ω f=1MHz, Open drain 2
Input capacitance Ciss 1135 pF VDS=50V,VGS=0V,f=1MHZ 2
Output capacitance Coss 399 pF VDS=50V,VGS=0V,f=1MHZ 2
Reverse transfer capacitance Crss 18 pF VDS=50V,VGS=0V,f=1MHZ 2
Total gate charge Qg 16 nC VGS=10V,VDS=50V,ID=10A 2
Gate-source charge Qgs 5.6 nC VGS=10V,VDS=50V,ID=10A 2
Gate-drain charge Qgd 2.4 nC VGS=10V,VDS=50V,ID=10A 2
Reverse recovery charge Qrr 42 nC IF=10A, di/dt=100A/us 2
Reverse recovery time trr 39.8 ns IF=10A, di/dt=100A/us 2
Turn-on delay time tD(on) 39.2 ns VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω 2
Turn-on rise time tr 11 ns VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω 2
Turn-off delay time tD(off) 53.2 ns VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω 2
Turn-off fall time tf 15.8 ns VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω 2

CAD (KiCad official)

  • Symbol: YJS12G10A
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: yjs12g10a-etched.step / yjs12g10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjs12g10a.step / yjs12g10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 db61c25d7a548ed4, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF