component
YJS12G10A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJS12G10A
Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8
YJS12G10A from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, shared with pins 2 and 3; the device is rated for 12A continuous drain current at TA=25℃. |
| 2 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 3; the device is rated for 12A continuous drain current at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, shared with pins 1 and 2; the device is rated for 12A continuous drain current at TA=25℃. |
| 4 | G | input | Gate of the N-channel MOSFET with a maximum gate-source voltage of ±20V and a threshold of 2.0 to 4.0V at ID=250μA. |
| 5 | D | passive | Drain of the N-channel MOSFET, shared with pins 6, 7 and 8; the maximum drain-source voltage is 100V. |
| 6 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 7 and 8; the maximum drain-source voltage is 100V. |
| 7 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 6 and 8; the maximum drain-source voltage is 100V. |
| 8 | D | passive | Drain of the N-channel MOSFET, shared with pins 5, 6 and 7; the maximum drain-source voltage is 100V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-source voltage | VDS | 100 | V | 1 | |||
| Gate-source voltage | VGS | -20 | 20 | V | Printed as ±20 V | 1 | |
| Drain current | ID | 12 | A | TA=25℃ | 1 | ||
| Drain current | ID | 7.5 | A | TA =100℃ | 1 | ||
| Pulsed drain current | IDM | 70 | A | 1 | |||
| Avalanche energy, single pulse | EAS | 80 | mJ | L=0.5mH | 1 | ||
| Total power dissipation | PD | 3.1 | W | 1 | |||
| Junction and storage temperature range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal resistance junction-to-ambient, t≤10s | RθJA | 31 | 40 | ℃/W | t≤10S | 1 | |
| Thermal resistance junction-to-ambient, steady-state | RθJA | 59 | 75 | ℃/W | Steady-State | 1 | |
| Thermal resistance junction-to-lead, steady-state | RθJL | 16 | 24 | ℃/W | Steady-State | 1 | |
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero gate voltage drain current | IDSS | 1 | μA | VDS=100V,VGS=0V, TJ=25℃ | 2 | ||
| Gate-body leakage current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Gate threshold voltage | VGS(th) | 2 | 2.8 | 4 | V | VDS= VGS, ID=250μA | 2 |
| Static drain-source on-resistance | RDS(ON) | 14.5 | 17 | mΩ | VGS=10V, ID=10A | 2 | |
| Diode forward voltage | VSD | 1.3 | V | IS=12A,VGS=0V | 2 | ||
| Maximum body-diode continuous current | IS | 12 | A | 2 | |||
| Gate resistance | RG | 1 | Ω | f=1MHz, Open drain | 2 | ||
| Input capacitance | Ciss | 1135 | pF | VDS=50V,VGS=0V,f=1MHZ | 2 | ||
| Output capacitance | Coss | 399 | pF | VDS=50V,VGS=0V,f=1MHZ | 2 | ||
| Reverse transfer capacitance | Crss | 18 | pF | VDS=50V,VGS=0V,f=1MHZ | 2 | ||
| Total gate charge | Qg | 16 | nC | VGS=10V,VDS=50V,ID=10A | 2 | ||
| Gate-source charge | Qgs | 5.6 | nC | VGS=10V,VDS=50V,ID=10A | 2 | ||
| Gate-drain charge | Qgd | 2.4 | nC | VGS=10V,VDS=50V,ID=10A | 2 | ||
| Reverse recovery charge | Qrr | 42 | nC | IF=10A, di/dt=100A/us | 2 | ||
| Reverse recovery time | trr | 39.8 | ns | IF=10A, di/dt=100A/us | 2 | ||
| Turn-on delay time | tD(on) | 39.2 | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 | ||
| Turn-on rise time | tr | 11 | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 | ||
| Turn-off delay time | tD(off) | 53.2 | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 | ||
| Turn-off fall time | tf | 15.8 | ns | VGS=10V, VDD=50V,ID=10A, RGEN=2.2Ω | 2 |
CAD (KiCad official)
- Symbol:
YJS12G10A - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
yjs12g10a-etched.step/yjs12g10a-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjs12g10a.step/yjs12g10a.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
db61c25d7a548ed4, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).