YJS12G06D

{
  "schema_version": 1,
  "type": "component",
  "slug": "yjs12g06d",
  "title": "YJS12G06D",
  "brief": "Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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    "transistors-thyristors",
    "yjs12g06d",
    "factory-2.0.0",
    "extractor-text"
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  "component": {
    "mpn": "YJS12G06D",
    "manufacturer": "Yangzhou Yangjie Elec Tech",
    "package": "SOP-8",
    "pin_count": 8,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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      "lcsc": "C2908530"
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "deferred",
        "error": "shared DigiKey quota guard: 539 calls left today"
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        "status": "no match"
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        "name": "S",
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        "description": "Source of the N-channel MOSFET, tied to the source pins 1-3; VDS max 60V and body-diode continuous current IS 12A."
      },
      {
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        "type": "passive",
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      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET, tied to the source pins 1-3; gate-source voltage limit is ±20V."
      },
      {
        "number": "4",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET with gate-source voltage limit ±20V and threshold VGS(th) of 1.2V min to 2.5V max at 250μA."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET, tied to the drain pins 5-8; VDS max 60V and pulsed drain current IDM 48A."
      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET, tied to the drain pins 5-8; RDS(ON) is below 8.5 mΩ at VGS=10V."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET, tied to the drain pins 5-8; RDS(ON) is below 12 mΩ at VGS=4.5V."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain of the MOSFET, tied to the drain pins 5-8; drain-source breakdown voltage is at least 60V at ID=250μA."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
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        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pins 1-3 are all source and pins 5-8 are all drain; the datasheet gives no separate function per pin",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 6,
        "cost_usd": 0.2375,
        "at": "2026-10-09T23:02:37"
      },
      "datasheet": {
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        "pages": 6,
        "sha256": "26fd5f4400a6ee81",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
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        "seat": "z = 0",
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
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  "metadata": {
    "specs": {
      "Manufacturer": "Yangzhou Yangjie Elec Tech",
      "Package": "SOP-8",
      "Category": "Transistors/Thyristors",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "26fd5f4400a6ee81",
      "rows": [
        {
          "name": "Gate Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.2,
          "typ": 1.7,
          "max": 2.5,
          "conditions": "VDS= VGS, ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 6.8,
          "max": 8.5,
          "conditions": "VGS= 10V, ID=12A",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Static Drain-Source On-Resistance",
          "symbol": "RDS(ON)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 8.3,
          "max": 12,
          "conditions": "VGS= 4.5V, ID=10A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate-Body Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": -100,
          "typ": null,
          "max": 100,
          "conditions": "VGS= ±20V, VDS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 60,
          "typ": null,
          "max": null,
          "conditions": "VGS= 0V, ID=250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
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          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=60V,VGS=0V, TJ=25℃",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Zero Gate Voltage Drain Current",
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          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 5,
          "conditions": "VDS=60V,VGS=0V, TJ=55℃",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.85,
          "max": 1.3,
          "conditions": "IS=12A,VGS=0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Maximum Body-Diode Continuous Current",
          "symbol": "IS",
          "kind": "electrical",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 12,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain-Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 60,
          "conditions": "TA=25℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate-Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain Current (Silicon limited)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 12,
          "conditions": "TA=25℃",
          "source_page": 1,
          "source": "datasheet"
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        {
          "name": "Drain Current (Silicon limited)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 7.5,
          "conditions": "TA=100℃",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 48,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche Energy",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 132,
          "conditions": "VDD=50V, RG=25Ω, L=0.5mH, IAS=23A (note B)",
          "source_page": 1,
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          "name": "Total Power Dissipation",
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          "typ": null,
          "max": 3.1,
          "conditions": "note C: using ≤10s junction-ambient thermal resistance",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Junction and Storage Temperature Range",
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          "unit": "℃",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
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        },
        {
          "name": "Thermal Resistance Junction-to-Ambient (t≤10s)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 31,
          "max": 40,
          "conditions": "t≤10S, note D",
          "source_page": 1,
          "source": "datasheet"
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        {
          "name": "Thermal Resistance Junction-to-Ambient (steady-state)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 59,
          "max": 75,
          "conditions": "steady-state, note D",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance Junction-to-Case (steady-state)",
          "symbol": "RθJL",
          "kind": "thermal",
          "unit": "℃/W",
          "min": null,
          "typ": 16,
          "max": 24,
          "conditions": "steady-state",
          "source_page": 1,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
    "name": "Ray",
    "email": "[email protected]"
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