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YJS12G06D

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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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page.json yjs12g06d: specified limits as data (metadata.characteristics, 20 rows from the datasheet) · Ray 24d ago
README.md yjs12g06d: specified limits as data (metadata.characteristics, 20 rows from the datasheet) · Ray 24d ago
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YJS12G06D

Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8

YJS12G06D from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the N-channel MOSFET, tied to the source pins 1-3; VDS max 60V and body-diode continuous current IS 12A.
2 S passive Source of the N-channel MOSFET, tied to the source pins 1-3; drain current ID is 12A at TA=25℃.
3 S passive Source of the N-channel MOSFET, tied to the source pins 1-3; gate-source voltage limit is ±20V.
4 G input Gate of the N-channel MOSFET with gate-source voltage limit ±20V and threshold VGS(th) of 1.2V min to 2.5V max at 250μA.
5 D passive Drain of the MOSFET, tied to the drain pins 5-8; VDS max 60V and pulsed drain current IDM 48A.
6 D passive Drain of the MOSFET, tied to the drain pins 5-8; RDS(ON) is below 8.5 mΩ at VGS=10V.
7 D passive Drain of the MOSFET, tied to the drain pins 5-8; RDS(ON) is below 12 mΩ at VGS=4.5V.
8 D passive Drain of the MOSFET, tied to the drain pins 5-8; drain-source breakdown voltage is at least 60V at ID=250μA.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate Threshold Voltage VGS(th) 1.2 1.7 2.5 V VDS= VGS, ID=250μA 2
Static Drain-Source On-Resistance RDS(ON) 6.8 8.5 mΩ VGS= 10V, ID=12A 2
Static Drain-Source On-Resistance RDS(ON) 8.3 12 mΩ VGS= 4.5V, ID=10A 2
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Drain-Source Breakdown Voltage BVDSS 60 V VGS= 0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V,VGS=0V, TJ=25℃ 2
Zero Gate Voltage Drain Current IDSS 5 μA VDS=60V,VGS=0V, TJ=55℃ 2
Diode Forward Voltage VSD 0.85 1.3 V IS=12A,VGS=0V 2
Maximum Body-Diode Continuous Current IS 12 A 2
Drain-Source Voltage VDS 60 V TA=25℃ 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current (Silicon limited) ID 12 A TA=25℃ 1
Drain Current (Silicon limited) ID 7.5 A TA=100℃ 1
Pulsed Drain Current IDM 48 A 1
Avalanche Energy EAS 132 mJ VDD=50V, RG=25Ω, L=0.5mH, IAS=23A (note B) 1
Total Power Dissipation PD 3.1 W note C: using ≤10s junction-ambient thermal resistance 1
Junction and Storage Temperature Range TJ,TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient (t≤10s) RθJA 31 40 ℃/W t≤10S, note D 1
Thermal Resistance Junction-to-Ambient (steady-state) RθJA 59 75 ℃/W steady-state, note D 1
Thermal Resistance Junction-to-Case (steady-state) RθJL 16 24 ℃/W steady-state 1

CAD (KiCad official)

  • Symbol: YJS12G06D
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: yjs12g06d-etched.step / yjs12g06d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjs12g06d.step / yjs12g06d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 26fd5f4400a6ee81, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF