component
YJS12G06D
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Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownYJS12G06D
Yangzhou Yangjie Elec Tech · MOSFETs · SOP-8
YJS12G06D from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the N-channel MOSFET, tied to the source pins 1-3; VDS max 60V and body-diode continuous current IS 12A. |
| 2 | S | passive | Source of the N-channel MOSFET, tied to the source pins 1-3; drain current ID is 12A at TA=25℃. |
| 3 | S | passive | Source of the N-channel MOSFET, tied to the source pins 1-3; gate-source voltage limit is ±20V. |
| 4 | G | input | Gate of the N-channel MOSFET with gate-source voltage limit ±20V and threshold VGS(th) of 1.2V min to 2.5V max at 250μA. |
| 5 | D | passive | Drain of the MOSFET, tied to the drain pins 5-8; VDS max 60V and pulsed drain current IDM 48A. |
| 6 | D | passive | Drain of the MOSFET, tied to the drain pins 5-8; RDS(ON) is below 8.5 mΩ at VGS=10V. |
| 7 | D | passive | Drain of the MOSFET, tied to the drain pins 5-8; RDS(ON) is below 12 mΩ at VGS=4.5V. |
| 8 | D | passive | Drain of the MOSFET, tied to the drain pins 5-8; drain-source breakdown voltage is at least 60V at ID=250μA. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS= VGS, ID=250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | 6.8 | 8.5 | mΩ | VGS= 10V, ID=12A | 2 | |
| Static Drain-Source On-Resistance | RDS(ON) | 8.3 | 12 | mΩ | VGS= 4.5V, ID=10A | 2 | |
| Gate-Body Leakage Current | IGSS | -100 | 100 | nA | VGS= ±20V, VDS=0V | 2 | |
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS= 0V, ID=250μA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | μA | VDS=60V,VGS=0V, TJ=25℃ | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | μA | VDS=60V,VGS=0V, TJ=55℃ | 2 | ||
| Diode Forward Voltage | VSD | 0.85 | 1.3 | V | IS=12A,VGS=0V | 2 | |
| Maximum Body-Diode Continuous Current | IS | 12 | A | 2 | |||
| Drain-Source Voltage | VDS | 60 | V | TA=25℃ | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Drain Current (Silicon limited) | ID | 12 | A | TA=25℃ | 1 | ||
| Drain Current (Silicon limited) | ID | 7.5 | A | TA=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 48 | A | 1 | |||
| Avalanche Energy | EAS | 132 | mJ | VDD=50V, RG=25Ω, L=0.5mH, IAS=23A (note B) | 1 | ||
| Total Power Dissipation | PD | 3.1 | W | note C: using ≤10s junction-ambient thermal resistance | 1 | ||
| Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | ℃ | 1 | ||
| Thermal Resistance Junction-to-Ambient (t≤10s) | RθJA | 31 | 40 | ℃/W | t≤10S, note D | 1 | |
| Thermal Resistance Junction-to-Ambient (steady-state) | RθJA | 59 | 75 | ℃/W | steady-state, note D | 1 | |
| Thermal Resistance Junction-to-Case (steady-state) | RθJL | 16 | 24 | ℃/W | steady-state | 1 |
CAD (KiCad official)
- Symbol:
YJS12G06D - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
yjs12g06d-etched.step/yjs12g06d-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);yjs12g06d.step/yjs12g06d.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256
26fd5f4400a6ee81, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).