component
YJS12G06D
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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yjs12g06d: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
2 files changed
+275−1
README.md+27@@ -26,6 +26,33 @@ YJS12G06D from Yangzhou Yangjie Elec Tech, in a SOP-8. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 8 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate Threshold Voltage | VGS(th) | 1.2 | 1.7 | 2.5 | V | VDS= VGS, ID=250μA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 6.8 | 8.5 | mΩ | VGS= 10V, ID=12A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 8.3 | 12 | mΩ | VGS= 4.5V, ID=10A | 2 |+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS=0V | 2 |+| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS= 0V, ID=250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 1 | μA | VDS=60V,VGS=0V, TJ=25℃ | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | 5 | μA | VDS=60V,VGS=0V, TJ=55℃ | 2 |+| Diode Forward Voltage | VSD | | 0.85 | 1.3 | V | IS=12A,VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | 12 | A | | 2 |+| Drain-Source Voltage | VDS | | | 60 | V | TA=25℃ | 1 |+| Gate-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Drain Current (Silicon limited) | ID | | | 12 | A | TA=25℃ | 1 |+| Drain Current (Silicon limited) | ID | | | 7.5 | A | TA=100℃ | 1 |+| Pulsed Drain Current | IDM | | | 48 | A | | 1 |+| Avalanche Energy | EAS | | | 132 | mJ | VDD=50V, RG=25Ω, L=0.5mH, IAS=23A (note B) | 1 |+| Total Power Dissipation | PD | | | 3.1 | W | note C: using ≤10s junction-ambient thermal resistance | 1 |+| Junction and Storage Temperature Range | TJ,TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction-to-Ambient (t≤10s) | RθJA | | 31 | 40 | ℃/W | t≤10S, note D | 1 |+| Thermal Resistance Junction-to-Ambient (steady-state) | RθJA | | 59 | 75 | ℃/W | steady-state, note D | 1 |+| Thermal Resistance Junction-to-Case (steady-state) | RθJL | | 16 | 24 | ℃/W | steady-state | 1 |+ ## CAD (KiCad official) - Symbol: `YJS12G06D`
page.json+248−1@@ -179,6 +179,253 @@ "Package": "SOP-8", "Category": "Transistors/Thyristors", "Pins": "8"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "26fd5f4400a6ee81",+ "rows": [+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.2,+ "typ": 1.7,+ "max": 2.5,+ "conditions": "VDS= VGS, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 6.8,+ "max": 8.5,+ "conditions": "VGS= 10V, ID=12A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 8.3,+ "max": 12,+ "conditions": "VGS= 4.5V, ID=10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS= ±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 60,+ "typ": null,+ "max": null,+ "conditions": "VGS= 0V, ID=250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VDS=60V,VGS=0V, TJ=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 5,+ "conditions": "VDS=60V,VGS=0V, TJ=55℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.85,+ "max": 1.3,+ "conditions": "IS=12A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Silicon limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 12,+ "conditions": "TA=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Silicon limited)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 7.5,+ "conditions": "TA=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 48,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 132,+ "conditions": "VDD=50V, RG=25Ω, L=0.5mH, IAS=23A (note B)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 3.1,+ "conditions": "note C: using ≤10s junction-ambient thermal resistance",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ,TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient (t≤10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 31,+ "max": 40,+ "conditions": "t≤10S, note D",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient (steady-state)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 59,+ "max": 75,+ "conditions": "steady-state, note D",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Case (steady-state)",+ "symbol": "RθJL",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 16,+ "max": 24,+ "conditions": "steady-state",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -220,4 +467,4 @@ "visibility": { "public": true }-}+}