# NDS0610

**onsemi** · MOSFETs · SOT-23

NDS0610 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; voltage-controlled input of the P-channel MOSFET, rated ±20 V gate-source maximum with a threshold of −1 to −3.5 V at ID = −1 mA. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, normally tied to the positive rail in a high-side switch; continuous body-diode current is −0.24 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET, rated −60 V drain-source with −0.12 A continuous and −1 A pulsed drain current. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -60 |  |  | V |  | 2 |
| Gate-Source Voltage | VGSS | -20 |  | 20 | V |  | 2 |
| Drain Current - Continuous | ID | -0.12 |  |  | A | Note 1 | 2 |
| Drain Current - Pulsed | ID | -1 |  |  | A | Pulsed | 2 |
| Maximum Power Dissipation | PD |  |  | 0.36 | W | Note 1 | 2 |
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 |  | 150 | °C |  | 2 |
| Maximum Lead Temperature for Soldering Purposes | TL |  |  | 300 | °C | 1/16 in from case for 10 seconds | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -60 |  |  | V | VGS = 0 V, ID = –10 µA | 3 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = –48 V, VGS = 0 V | 3 |
| Zero Gate Voltage Drain Current at TJ=125°C | IDSS |  |  | -200 | µA | VDS = –48 V, VGS = 0 V, TJ = 125°C | 3 |
| Gate-Body Leakage | IGSS | -10 |  | 10 | nA | VGS = ±20 V, VDS = 0 V | 3 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3.5 | V | VDS = VGS, ID = –1 mA | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 1 | 10 | Ω | VGS = –10 V, ID = –0.5 A | 3 |
| Static Drain-Source On-Resistance | RDS(on) |  | 1.3 | 20 | Ω | VGS = –4.5 V, ID = –0.25 A | 3 |
| Static Drain-Source On-Resistance at TJ=125°C | RDS(on) |  | 1.7 | 16 | Ω | VGS = –10 V, ID = –0.5 A, TJ = 125°C | 3 |
| On-State Drain Current | ID(on) | -0.6 |  |  | A | VGS = –10 V, VDS = –10 V | 3 |
| Forward Transconductance | gFS | 70 | 430 |  | mS | VDS = –10V, ID = –0.1 A | 3 |
| Turn-On Delay Time | td(on) |  | 2.5 | 5 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |
| Turn-On Rise Time | tr |  | 6.3 | 12.6 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |
| Turn-Off Delay Time | td(off) |  | 10 | 15 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |
| Turn-Off Fall Time | tf |  | 7.5 | 15 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |
| Total Gate Charge | Qg |  | 1.8 | 2.5 | nC |  | 3 |
| Drain-Source Diode Forward Voltage | VSD |  | -0.8 | -1.5 | V | VGS = 0 V, IS = –0.24 A (Note 2) | 3 |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -0.24 |  |  | A |  | 3 |
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ |  | -53 |  | mV/°C | ID = –10 µA, Referenced to 25°C | 3 |
| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ |  | 3 |  | mV/°C | ID = –1 mA, Referenced to 25°C | 3 |
| Input Capacitance | Ciss |  | 79 |  | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Output Capacitance | Coss |  | 10 |  | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Reverse Transfer Capacitance | Crss |  | 4 |  | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 |
| Gate Resistance | RG |  | 10 |  | Ω | VGS = –15 mV, f = 1.0 MHz | 3 |
| Gate-Source Charge | Qgs |  | 0.3 |  | nC |  | 3 |
| Gate-Drain Charge | Qgd |  | 0.4 |  | nC | VDS = –48 V, ID = –0.5 A, VGS = –10 V | 3 |
| Diode Reverse Recovery Time | trr |  | 17 |  | nS |  | 3 |
| Diode Reverse Recovery Charge | Qrr |  | 15 |  | nC | IF = –0.5 A, diF/dt = 100 A/µs (Note 2) | 3 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 350 |  | °C/W | Note 1; 350 °C/W when mounted on a minimum pad | 2 |

## CAD (KiCad official)

- Symbol: `NDS0610`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `nds0610-etched.step` / `nds0610-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `nds0610.step` / `nds0610.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [onsemi datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586175464083755008) (6 pp, sha256 `8fd3306c6c01fdf3`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/nds0610-datasheet.pdf)