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NDS0610

Public Made by Adom

by adom

onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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page.json nds0610: specified limits as data (metadata.characteristics, 35 rows from the datasheet) · Ray 16d ago
README.md nds0610: specified limits as data (metadata.characteristics, 35 rows from the datasheet) · Ray 16d ago

NDS0610

onsemi · MOSFETs · SOT-23

NDS0610 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; voltage-controlled input of the P-channel MOSFET, rated ±20 V gate-source maximum with a threshold of −1 to −3.5 V at ID = −1 mA.
2 S passive Source terminal of the P-channel MOSFET, normally tied to the positive rail in a high-side switch; continuous body-diode current is −0.24 A.
3 D passive Drain terminal of the P-channel MOSFET, rated −60 V drain-source with −0.12 A continuous and −1 A pulsed drain current.

Key specifications

Parameter Value
Manufacturer onsemi
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS -60 V 2
Gate-Source Voltage VGSS -20 20 V 2
Drain Current - Continuous ID -0.12 A Note 1 2
Drain Current - Pulsed ID -1 A Pulsed 2
Maximum Power Dissipation PD 0.36 W Note 1 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 °C 2
Maximum Lead Temperature for Soldering Purposes TL 300 °C 1/16 in from case for 10 seconds 2
Drain-Source Breakdown Voltage BVDSS -60 V VGS = 0 V, ID = –10 µA 3
Zero Gate Voltage Drain Current IDSS -1 µA VDS = –48 V, VGS = 0 V 3
Zero Gate Voltage Drain Current at TJ=125°C IDSS -200 µA VDS = –48 V, VGS = 0 V, TJ = 125°C 3
Gate-Body Leakage IGSS -10 10 nA VGS = ±20 V, VDS = 0 V 3
Gate Threshold Voltage VGS(th) -1 -1.7 -3.5 V VDS = VGS, ID = –1 mA 3
Static Drain-Source On-Resistance RDS(on) 1 10 Ω VGS = –10 V, ID = –0.5 A 3
Static Drain-Source On-Resistance RDS(on) 1.3 20 Ω VGS = –4.5 V, ID = –0.25 A 3
Static Drain-Source On-Resistance at TJ=125°C RDS(on) 1.7 16 Ω VGS = –10 V, ID = –0.5 A, TJ = 125°C 3
On-State Drain Current ID(on) -0.6 A VGS = –10 V, VDS = –10 V 3
Forward Transconductance gFS 70 430 mS VDS = –10V, ID = –0.1 A 3
Turn-On Delay Time td(on) 2.5 5 ns VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω 3
Turn-On Rise Time tr 6.3 12.6 ns VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω 3
Turn-Off Delay Time td(off) 10 15 ns VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω 3
Turn-Off Fall Time tf 7.5 15 ns VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω 3
Total Gate Charge Qg 1.8 2.5 nC 3
Drain-Source Diode Forward Voltage VSD -0.8 -1.5 V VGS = 0 V, IS = –0.24 A (Note 2) 3
Maximum Continuous Drain-Source Diode Forward Current IS -0.24 A 3
Breakdown Voltage Temperature Coefficient ∆BVDSS/∆TJ -53 mV/°C ID = –10 µA, Referenced to 25°C 3
Gate Threshold Voltage Temperature Coefficient ∆VGS(th)/∆TJ 3 mV/°C ID = –1 mA, Referenced to 25°C 3
Input Capacitance Ciss 79 pF VDS = –25 V, VGS = 0 V, f = 1.0 MHz 3
Output Capacitance Coss 10 pF VDS = –25 V, VGS = 0 V, f = 1.0 MHz 3
Reverse Transfer Capacitance Crss 4 pF VDS = –25 V, VGS = 0 V, f = 1.0 MHz 3
Gate Resistance RG 10 Ω VGS = –15 mV, f = 1.0 MHz 3
Gate-Source Charge Qgs 0.3 nC 3
Gate-Drain Charge Qgd 0.4 nC VDS = –48 V, ID = –0.5 A, VGS = –10 V 3
Diode Reverse Recovery Time trr 17 nS 3
Diode Reverse Recovery Charge Qrr 15 nC IF = –0.5 A, diF/dt = 100 A/µs (Note 2) 3
Thermal Resistance, Junction-to-Ambient RθJA 350 °C/W Note 1; 350 °C/W when mounted on a minimum pad 2

CAD (KiCad official)

  • Symbol: NDS0610
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: nds0610-etched.step / nds0610-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); nds0610.step / nds0610.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: onsemi datasheet (6 pp, sha256 8fd3306c6c01fdf3, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF