component
NDS0610
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownNDS0610
onsemi · MOSFETs · SOT-23
NDS0610 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; voltage-controlled input of the P-channel MOSFET, rated ±20 V gate-source maximum with a threshold of −1 to −3.5 V at ID = −1 mA. |
| 2 | S | passive | Source terminal of the P-channel MOSFET, normally tied to the positive rail in a high-side switch; continuous body-diode current is −0.24 A. |
| 3 | D | passive | Drain terminal of the P-channel MOSFET, rated −60 V drain-source with −0.12 A continuous and −1 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | onsemi |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | -60 | V | 2 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 2 | ||
| Drain Current - Continuous | ID | -0.12 | A | Note 1 | 2 | ||
| Drain Current - Pulsed | ID | -1 | A | Pulsed | 2 | ||
| Maximum Power Dissipation | PD | 0.36 | W | Note 1 | 2 | ||
| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | 150 | °C | 2 | ||
| Maximum Lead Temperature for Soldering Purposes | TL | 300 | °C | 1/16 in from case for 10 seconds | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS = 0 V, ID = –10 µA | 3 | ||
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = –48 V, VGS = 0 V | 3 | ||
| Zero Gate Voltage Drain Current at TJ=125°C | IDSS | -200 | µA | VDS = –48 V, VGS = 0 V, TJ = 125°C | 3 | ||
| Gate-Body Leakage | IGSS | -10 | 10 | nA | VGS = ±20 V, VDS = 0 V | 3 | |
| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3.5 | V | VDS = VGS, ID = –1 mA | 3 |
| Static Drain-Source On-Resistance | RDS(on) | 1 | 10 | Ω | VGS = –10 V, ID = –0.5 A | 3 | |
| Static Drain-Source On-Resistance | RDS(on) | 1.3 | 20 | Ω | VGS = –4.5 V, ID = –0.25 A | 3 | |
| Static Drain-Source On-Resistance at TJ=125°C | RDS(on) | 1.7 | 16 | Ω | VGS = –10 V, ID = –0.5 A, TJ = 125°C | 3 | |
| On-State Drain Current | ID(on) | -0.6 | A | VGS = –10 V, VDS = –10 V | 3 | ||
| Forward Transconductance | gFS | 70 | 430 | mS | VDS = –10V, ID = –0.1 A | 3 | |
| Turn-On Delay Time | td(on) | 2.5 | 5 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Turn-On Rise Time | tr | 6.3 | 12.6 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Turn-Off Delay Time | td(off) | 10 | 15 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Turn-Off Fall Time | tf | 7.5 | 15 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 | |
| Total Gate Charge | Qg | 1.8 | 2.5 | nC | 3 | ||
| Drain-Source Diode Forward Voltage | VSD | -0.8 | -1.5 | V | VGS = 0 V, IS = –0.24 A (Note 2) | 3 | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | -0.24 | A | 3 | |||
| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | -53 | mV/°C | ID = –10 µA, Referenced to 25°C | 3 | ||
| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | 3 | mV/°C | ID = –1 mA, Referenced to 25°C | 3 | ||
| Input Capacitance | Ciss | 79 | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Output Capacitance | Coss | 10 | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Reverse Transfer Capacitance | Crss | 4 | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 | ||
| Gate Resistance | RG | 10 | Ω | VGS = –15 mV, f = 1.0 MHz | 3 | ||
| Gate-Source Charge | Qgs | 0.3 | nC | 3 | |||
| Gate-Drain Charge | Qgd | 0.4 | nC | VDS = –48 V, ID = –0.5 A, VGS = –10 V | 3 | ||
| Diode Reverse Recovery Time | trr | 17 | nS | 3 | |||
| Diode Reverse Recovery Charge | Qrr | 15 | nC | IF = –0.5 A, diF/dt = 100 A/µs (Note 2) | 3 | ||
| Thermal Resistance, Junction-to-Ambient | RθJA | 350 | °C/W | Note 1; 350 °C/W when mounted on a minimum pad | 2 |
CAD (KiCad official)
- Symbol:
NDS0610 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
nds0610-etched.step/nds0610-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);nds0610.step/nds0610.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: onsemi datasheet (6 pp, sha256
8fd3306c6c01fdf3, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).