component
NDS0610
Public Made by Adomby adom
onsemi MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
← Commit history
nds0610: specified limits as data (metadata.characteristics, 35 rows from the datasheet)
2 files changed
+470−1
README.md+42@@ -21,6 +21,48 @@ NDS0610 from onsemi, in a SOT-23. Pinout and pin descriptions extracted from the | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain-Source Voltage | VDSS | -60 | | | V | | 2 |+| Gate-Source Voltage | VGSS | -20 | | 20 | V | | 2 |+| Drain Current - Continuous | ID | -0.12 | | | A | Note 1 | 2 |+| Drain Current - Pulsed | ID | -1 | | | A | Pulsed | 2 |+| Maximum Power Dissipation | PD | | | 0.36 | W | Note 1 | 2 |+| Operating and Storage Junction Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 2 |+| Maximum Lead Temperature for Soldering Purposes | TL | | | 300 | °C | 1/16 in from case for 10 seconds | 2 |+| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS = 0 V, ID = –10 µA | 3 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | µA | VDS = –48 V, VGS = 0 V | 3 |+| Zero Gate Voltage Drain Current at TJ=125°C | IDSS | | | -200 | µA | VDS = –48 V, VGS = 0 V, TJ = 125°C | 3 |+| Gate-Body Leakage | IGSS | -10 | | 10 | nA | VGS = ±20 V, VDS = 0 V | 3 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.7 | -3.5 | V | VDS = VGS, ID = –1 mA | 3 |+| Static Drain-Source On-Resistance | RDS(on) | | 1 | 10 | Ω | VGS = –10 V, ID = –0.5 A | 3 |+| Static Drain-Source On-Resistance | RDS(on) | | 1.3 | 20 | Ω | VGS = –4.5 V, ID = –0.25 A | 3 |+| Static Drain-Source On-Resistance at TJ=125°C | RDS(on) | | 1.7 | 16 | Ω | VGS = –10 V, ID = –0.5 A, TJ = 125°C | 3 |+| On-State Drain Current | ID(on) | -0.6 | | | A | VGS = –10 V, VDS = –10 V | 3 |+| Forward Transconductance | gFS | 70 | 430 | | mS | VDS = –10V, ID = –0.1 A | 3 |+| Turn-On Delay Time | td(on) | | 2.5 | 5 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Turn-On Rise Time | tr | | 6.3 | 12.6 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Turn-Off Delay Time | td(off) | | 10 | 15 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Turn-Off Fall Time | tf | | 7.5 | 15 | ns | VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω | 3 |+| Total Gate Charge | Qg | | 1.8 | 2.5 | nC | | 3 |+| Drain-Source Diode Forward Voltage | VSD | | -0.8 | -1.5 | V | VGS = 0 V, IS = –0.24 A (Note 2) | 3 |+| Maximum Continuous Drain-Source Diode Forward Current | IS | -0.24 | | | A | | 3 |+| Breakdown Voltage Temperature Coefficient | ∆BVDSS/∆TJ | | -53 | | mV/°C | ID = –10 µA, Referenced to 25°C | 3 |+| Gate Threshold Voltage Temperature Coefficient | ∆VGS(th)/∆TJ | | 3 | | mV/°C | ID = –1 mA, Referenced to 25°C | 3 |+| Input Capacitance | Ciss | | 79 | | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 |+| Output Capacitance | Coss | | 10 | | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 |+| Reverse Transfer Capacitance | Crss | | 4 | | pF | VDS = –25 V, VGS = 0 V, f = 1.0 MHz | 3 |+| Gate Resistance | RG | | 10 | | Ω | VGS = –15 mV, f = 1.0 MHz | 3 |+| Gate-Source Charge | Qgs | | 0.3 | | nC | | 3 |+| Gate-Drain Charge | Qgd | | 0.4 | | nC | VDS = –48 V, ID = –0.5 A, VGS = –10 V | 3 |+| Diode Reverse Recovery Time | trr | | 17 | | nS | | 3 |+| Diode Reverse Recovery Charge | Qrr | | 15 | | nC | IF = –0.5 A, diF/dt = 100 A/µs (Note 2) | 3 |+| Thermal Resistance, Junction-to-Ambient | RθJA | | 350 | | °C/W | Note 1; 350 °C/W when mounted on a minimum pad | 2 |+ ## CAD (KiCad official) - Symbol: `NDS0610`
page.json+428−1@@ -151,6 +151,433 @@ "Package": "SOT-23", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "8fd3306c6c01fdf3",+ "rows": [+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage",+ "symbol": "VGSS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Continuous",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -0.12,+ "typ": null,+ "max": null,+ "conditions": "Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain Current - Pulsed",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -1,+ "typ": null,+ "max": null,+ "conditions": "Pulsed",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 0.36,+ "conditions": "Note 1",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Operating and Storage Junction Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Lead Temperature for Soldering Purposes",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "1/16 in from case for 10 seconds",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -60,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0 V, ID = –10 µA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS = –48 V, VGS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current at TJ=125°C",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": -200,+ "conditions": "VDS = –48 V, VGS = 0 V, TJ = 125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Body Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -10,+ "typ": null,+ "max": 10,+ "conditions": "VGS = ±20 V, VDS = 0 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.7,+ "max": -3.5,+ "conditions": "VDS = VGS, ID = –1 mA",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1,+ "max": 10,+ "conditions": "VGS = –10 V, ID = –0.5 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.3,+ "max": 20,+ "conditions": "VGS = –4.5 V, ID = –0.25 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance at TJ=125°C",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1.7,+ "max": 16,+ "conditions": "VGS = –10 V, ID = –0.5 A, TJ = 125°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "On-State Drain Current",+ "symbol": "ID(on)",+ "kind": "electrical",+ "unit": "A",+ "min": -0.6,+ "typ": null,+ "max": null,+ "conditions": "VGS = –10 V, VDS = –10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gFS",+ "kind": "electrical",+ "unit": "mS",+ "min": 70,+ "typ": 430,+ "max": null,+ "conditions": "VDS = –10V, ID = –0.1 A",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 2.5,+ "max": 5,+ "conditions": "VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 6.3,+ "max": 12.6,+ "conditions": "VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 10,+ "max": 15,+ "conditions": "VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 7.5,+ "max": 15,+ "conditions": "VDD = –25 V, ID = –0.12 A, VGS = –10 V, RGEN = 6 Ω",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 1.8,+ "max": 2.5,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": -0.8,+ "max": -1.5,+ "conditions": "VGS = 0 V, IS = –0.24 A (Note 2)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Maximum Continuous Drain-Source Diode Forward Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": -0.24,+ "typ": null,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temperature Coefficient",+ "symbol": "∆BVDSS/∆TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": -53,+ "max": null,+ "conditions": "ID = –10 µA, Referenced to 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage Temperature Coefficient",+ "symbol": "∆VGS(th)/∆TJ",+ "kind": "temperature_coefficient",+ "unit": "mV/°C",+ "min": null,+ "typ": 3,+ "max": null,+ "conditions": "ID = –1 mA, Referenced to 25°C",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 79,+ "max": null,+ "conditions": "VDS = –25 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VDS = –25 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4,+ "max": null,+ "conditions": "VDS = –25 V, VGS = 0 V, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate Resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 10,+ "max": null,+ "conditions": "VGS = –15 mV, f = 1.0 MHz",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.3,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Gate-Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 0.4,+ "max": null,+ "conditions": "VDS = –48 V, ID = –0.5 A, VGS = –10 V",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Reverse Recovery Time",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "nS",+ "min": null,+ "typ": 17,+ "max": null,+ "conditions": "",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Diode Reverse Recovery Charge",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 15,+ "max": null,+ "conditions": "IF = –0.5 A, diF/dt = 100 A/µs (Note 2)",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction-to-Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 350,+ "max": null,+ "conditions": "Note 1; 350 °C/W when mounted on a minimum pad",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -192,4 +619,4 @@ "visibility": { "public": true }-}+}