# IRFB4410ZPBF

**Infineon Technologies** · MOSFETs · TO-220AB

IRFB4410ZPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-to-source voltage is rated to ±20 V (VGS). |
| 2 | D | passive | Drain terminal; rated for VDSS of 100 V and continuous drain current of 97 A (silicon limited) at TC = 25°C. |
| 3 | S | passive | Source terminal; continuous body-diode source current is rated at 97 A and pulsed at 390 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220AB |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous Drain Current (Silicon Limited) at TC = 25°C | ID |  |  | 97 | A | VGS @ 10V (Silicon Limited) | 1 |
| Continuous Drain Current (Silicon Limited) at TC = 100°C | ID |  |  | 69 | A | VGS @ 10V (Silicon Limited) | 1 |
| Pulsed Drain Current | IDM |  |  | 390 | A |  | 1 |
| Maximum Power Dissipation | PD |  |  | 230 | W | TC = 25°C | 1 |
| Linear Derating Factor |  |  |  | 1.5 | W/°C |  | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Peak Diode Recovery | dv/dt |  |  | 16 | V/ns |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 175 | °C |  | 1 |
| Soldering Temperature, for 10 seconds |  |  |  | 300 | °C | 1.6mm from case | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 242 | mJ | Thermally limited | 1 |
| Mounting torque, 6-32 or M3 screw |  |  |  | 1.1 | N m | 6-32 or M3 screw; printed as 10lb in (1.1N m) | 1 |
| Junction-to-Case Thermal Resistance | RθJC |  |  | 0.65 | °C/W | Junction-to-Case | 1 |
| Junction-to-Ambient Thermal Resistance, TO-220 | RθJA |  |  | 62 | °C/W | Junction-to-Ambient, TO-220 | 1 |
| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 |  |  | V | VGS = 0V, ID = 250μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 |  | 4 | V | VDS = VGS, ID = 150μA | 2 |
| Static Drain-to-Source On-Resistance | RDS(on) |  | 7.2 | 9 | mΩ | VGS = 10V, ID = 58A | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 20 | μA | VDS = 100V, VGS = 0V | 2 |
| Drain-to-Source Leakage Current | IDSS |  |  | 250 | μA | VDS = 80V, VGS = 0V, TJ = 125°C | 2 |
| Gate-to-Source Forward Leakage | IGSS |  |  | 100 | nA | VGS = 20V | 2 |
| Gate-to-Source Reverse Leakage | IGSS |  |  | -100 | nA | VGS = -20V | 2 |
| Forward Transconductance | gfs | 140 |  |  | S | VDS = 10V, ID = 58A | 2 |
| Total Gate Charge | Qg |  | 83 | 120 | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |
| Turn-On Delay Time | td(on) |  | 16 |  | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |
| Input Capacitance | Ciss |  | 4820 |  | pF | VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 | 2 |
| Reverse Recovery Time (TJ = 25°C) | trr |  | 38 | 57 | ns | TJ = 25°C, VR = 85V, IF = 58A | 2 |
| Reverse Recovery Time (TJ = 125°C) | trr |  | 46 | 69 | ns | TJ = 125°C, VR = 85V, IF = 58A | 2 |
| Reverse Recovery Charge (TJ = 25°C) | Qrr |  | 53 | 80 | nC | TJ = 25°C, di/dt = 100A/μs | 2 |
| Reverse Recovery Charge (TJ = 125°C) | Qrr |  | 82 | 120 | nC | TJ = 125°C | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 97 | A |  | 2 |
| Pulsed Source Current (Body Diode) | ISM |  |  | 390 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | 1.3 | V | TJ = 25°C, IS = 58A, VGS = 0V | 2 |
| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ |  | 0.12 |  | V/°C | Reference to 25°C, ID = 5mA | 2 |
| Internal Gate Resistance | RG |  | 0.7 |  | Ω |  | 2 |
| Case-to-Sink Thermal Resistance, Flat Greased Surface, TO-220 | RθCS |  | 0.5 |  | °C/W | Case-to-Sink, Flat Greased Surface, TO-220 | 1 |
| Gate-to-Source Charge | Qgs |  | 19 |  | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |
| Gate-to-Drain (Miller) Charge | Qgd |  | 27 |  | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |
| Total Gate Charge Sync. (Qg - Qgd) | Qsync |  | 56 |  | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |
| Rise Time | tr |  | 52 |  | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |
| Turn-Off Delay Time | td(off) |  | 43 |  | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |
| Fall Time | tf |  | 57 |  | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |
| Output Capacitance | Coss |  | 340 |  | pF | VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 | 2 |
| Reverse Transfer Capacitance | Crss |  | 170 |  | pF | VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 | 2 |
| Effective Output Capacitance (Energy Related) | Coss eff. (ER) |  | 420 |  | pF | VGS = 0V, VDS = 0V to 80V, See Fig.11 | 2 |
| Effective Output Capacitance (Time Related) | Coss eff. (TR) |  | 690 |  | pF | VGS = 0V, VDS = 0V to 80V | 2 |
| Reverse Recovery Current | IRRM |  | 2.5 |  | A | TJ = 25°C | 2 |

## CAD (KiCad official)

- Symbol: `IRFB4410ZPBF`
- Footprint: `Package_TO_SOT_THT:TO-220-3_Vertical`
- 3D model: TO-220AB (KiCad packages3D, STEP)
- 3D model files: `irfb4410zpbf-etched.step` / `irfb4410zpbf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `irfb4410zpbf.step` / `irfb4410zpbf.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Infineon Technologies datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588887161911721984) (12 pp, sha256 `a9dbc9f677efadc1`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/irfb4410zpbf-datasheet.pdf)