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IRFB4410ZPBF

Public Made by Adom

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Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Symbol & Footprint

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Datasheet

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Contents

README

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IRFB4410ZPBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB4410ZPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-to-source voltage is rated to ±20 V (VGS).
2 D passive Drain terminal; rated for VDSS of 100 V and continuous drain current of 97 A (silicon limited) at TC = 25°C.
3 S passive Source terminal; continuous body-diode source current is rated at 97 A and pulsed at 390 A.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220AB
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous Drain Current (Silicon Limited) at TC = 25°C ID 97 A VGS @ 10V (Silicon Limited) 1
Continuous Drain Current (Silicon Limited) at TC = 100°C ID 69 A VGS @ 10V (Silicon Limited) 1
Pulsed Drain Current IDM 390 A 1
Maximum Power Dissipation PD 230 W TC = 25°C 1
Linear Derating Factor 1.5 W/°C 1
Gate-to-Source Voltage VGS -20 20 V 1
Peak Diode Recovery dv/dt 16 V/ns 1
Operating Junction and Storage Temperature Range TJ, TSTG -55 175 °C 1
Soldering Temperature, for 10 seconds 300 °C 1.6mm from case 1
Single Pulse Avalanche Energy EAS 242 mJ Thermally limited 1
Mounting torque, 6-32 or M3 screw 1.1 N m 6-32 or M3 screw; printed as 10lb in (1.1N m) 1
Junction-to-Case Thermal Resistance RθJC 0.65 °C/W Junction-to-Case 1
Junction-to-Ambient Thermal Resistance, TO-220 RθJA 62 °C/W Junction-to-Ambient, TO-220 1
Drain-to-Source Breakdown Voltage V(BR)DSS 100 V VGS = 0V, ID = 250μA 2
Gate Threshold Voltage VGS(th) 2 4 V VDS = VGS, ID = 150μA 2
Static Drain-to-Source On-Resistance RDS(on) 7.2 9 mΩ VGS = 10V, ID = 58A 2
Drain-to-Source Leakage Current IDSS 20 μA VDS = 100V, VGS = 0V 2
Drain-to-Source Leakage Current IDSS 250 μA VDS = 80V, VGS = 0V, TJ = 125°C 2
Gate-to-Source Forward Leakage IGSS 100 nA VGS = 20V 2
Gate-to-Source Reverse Leakage IGSS -100 nA VGS = -20V 2
Forward Transconductance gfs 140 S VDS = 10V, ID = 58A 2
Total Gate Charge Qg 83 120 nC VGS = 10V, VDS = 50V, ID = 58A 2
Turn-On Delay Time td(on) 16 ns ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V 2
Input Capacitance Ciss 4820 pF VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 2
Reverse Recovery Time (TJ = 25°C) trr 38 57 ns TJ = 25°C, VR = 85V, IF = 58A 2
Reverse Recovery Time (TJ = 125°C) trr 46 69 ns TJ = 125°C, VR = 85V, IF = 58A 2
Reverse Recovery Charge (TJ = 25°C) Qrr 53 80 nC TJ = 25°C, di/dt = 100A/μs 2
Reverse Recovery Charge (TJ = 125°C) Qrr 82 120 nC TJ = 125°C 2
Continuous Source Current (Body Diode) IS 97 A 2
Pulsed Source Current (Body Diode) ISM 390 A 2
Diode Forward Voltage VSD 1.3 V TJ = 25°C, IS = 58A, VGS = 0V 2
Breakdown Voltage Temp. Coefficient ΔV(BR)DSS/ΔTJ 0.12 V/°C Reference to 25°C, ID = 5mA 2
Internal Gate Resistance RG 0.7 Ω 2
Case-to-Sink Thermal Resistance, Flat Greased Surface, TO-220 RθCS 0.5 °C/W Case-to-Sink, Flat Greased Surface, TO-220 1
Gate-to-Source Charge Qgs 19 nC VGS = 10V, VDS = 50V, ID = 58A 2
Gate-to-Drain (Miller) Charge Qgd 27 nC VGS = 10V, VDS = 50V, ID = 58A 2
Total Gate Charge Sync. (Qg - Qgd) Qsync 56 nC VGS = 10V, VDS = 50V, ID = 58A 2
Rise Time tr 52 ns ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V 2
Turn-Off Delay Time td(off) 43 ns ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V 2
Fall Time tf 57 ns ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V 2
Output Capacitance Coss 340 pF VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 2
Reverse Transfer Capacitance Crss 170 pF VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 2
Effective Output Capacitance (Energy Related) Coss eff. (ER) 420 pF VGS = 0V, VDS = 0V to 80V, See Fig.11 2
Effective Output Capacitance (Time Related) Coss eff. (TR) 690 pF VGS = 0V, VDS = 0V to 80V 2
Reverse Recovery Current IRRM 2.5 A TJ = 25°C 2

CAD (KiCad official)

  • Symbol: IRFB4410ZPBF
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220AB (KiCad packages3D, STEP)
  • 3D model files: irfb4410zpbf-etched.step / irfb4410zpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4410zpbf.step / irfb4410zpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (12 pp, sha256 a9dbc9f677efadc1, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF