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Generated by kicad-footprint-generator · KiCad file format 20260206

Name	Last commit message	Last updated
docs	Publish 0.1.0 · Ray	23d ago
viewers	irfb4410zpbf: viewers · Ray	23d ago
irfb4410zpbf-etched.glb	irfb4410zpbf: factory component page (tier=lcsc) · Ray	23d ago
irfb4410zpbf-etched.step	irfb4410zpbf: factory component page (tier=lcsc) · Ray	23d ago
irfb4410zpbf-hero.glb	irfb4410zpbf: hero GLB from the etched model (keeps the MPN mark) · Ray	23d ago
irfb4410zpbf-hero.overlay.json	Publish 0.1.0 · Ray	23d ago
irfb4410zpbf.glb	Publish 0.1.0 · Ray	23d ago
irfb4410zpbf.kicad_mod	Publish 0.1.0 · Ray	23d ago
irfb4410zpbf.kicad_sym	Publish 0.1.0 · Ray	23d ago
irfb4410zpbf.lbr	Publish 0.1.0 · Ray	23d ago
irfb4410zpbf.step	Publish 0.1.0 · Ray	23d ago
package.json	Publish 0.1.0 · Ray	23d ago
page.json	irfb4410zpbf: specified limits as data (metadata.characteristics, 45 rows from the datasheet) · Ray	17d ago
README.md	irfb4410zpbf: specified limits as data (metadata.characteristics, 45 rows from the datasheet) · Ray	17d ago

IRFB4410ZPBF

Infineon Technologies · MOSFETs · TO-220AB

IRFB4410ZPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	G	input	Gate terminal; gate-to-source voltage is rated to ±20 V (VGS).
2	D	passive	Drain terminal; rated for VDSS of 100 V and continuous drain current of 97 A (silicon limited) at TC = 25°C.
3	S	passive	Source terminal; continuous body-diode source current is rated at 97 A and pulsed at 390 A.

Key specifications

Parameter	Value
Manufacturer	Infineon Technologies
Package	TO-220AB
Category	Transistors/Thyristors
Pins	3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Continuous Drain Current (Silicon Limited) at TC = 25°C	ID			97	A	VGS @ 10V (Silicon Limited)	1
Continuous Drain Current (Silicon Limited) at TC = 100°C	ID			69	A	VGS @ 10V (Silicon Limited)	1
Pulsed Drain Current	IDM			390	A		1
Maximum Power Dissipation	PD			230	W	TC = 25°C	1
Linear Derating Factor				1.5	W/°C		1
Gate-to-Source Voltage	VGS	-20		20	V		1
Peak Diode Recovery	dv/dt			16	V/ns		1
Operating Junction and Storage Temperature Range	TJ, TSTG	-55		175	°C		1
Soldering Temperature, for 10 seconds				300	°C	1.6mm from case	1
Single Pulse Avalanche Energy	EAS			242	mJ	Thermally limited	1
Mounting torque, 6-32 or M3 screw				1.1	N m	6-32 or M3 screw; printed as 10lb in (1.1N m)	1
Junction-to-Case Thermal Resistance	RθJC			0.65	°C/W	Junction-to-Case	1
Junction-to-Ambient Thermal Resistance, TO-220	RθJA			62	°C/W	Junction-to-Ambient, TO-220	1
Drain-to-Source Breakdown Voltage	V(BR)DSS	100			V	VGS = 0V, ID = 250μA	2
Gate Threshold Voltage	VGS(th)	2		4	V	VDS = VGS, ID = 150μA	2
Static Drain-to-Source On-Resistance	RDS(on)		7.2	9	mΩ	VGS = 10V, ID = 58A	2
Drain-to-Source Leakage Current	IDSS			20	μA	VDS = 100V, VGS = 0V	2
Drain-to-Source Leakage Current	IDSS			250	μA	VDS = 80V, VGS = 0V, TJ = 125°C	2
Gate-to-Source Forward Leakage	IGSS			100	nA	VGS = 20V	2
Gate-to-Source Reverse Leakage	IGSS			-100	nA	VGS = -20V	2
Forward Transconductance	gfs	140			S	VDS = 10V, ID = 58A	2
Total Gate Charge	Qg		83	120	nC	VGS = 10V, VDS = 50V, ID = 58A	2
Turn-On Delay Time	td(on)		16		ns	ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V	2
Input Capacitance	Ciss		4820		pF	VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5	2
Reverse Recovery Time (TJ = 25°C)	trr		38	57	ns	TJ = 25°C, VR = 85V, IF = 58A	2
Reverse Recovery Time (TJ = 125°C)	trr		46	69	ns	TJ = 125°C, VR = 85V, IF = 58A	2
Reverse Recovery Charge (TJ = 25°C)	Qrr		53	80	nC	TJ = 25°C, di/dt = 100A/μs	2
Reverse Recovery Charge (TJ = 125°C)	Qrr		82	120	nC	TJ = 125°C	2
Continuous Source Current (Body Diode)	IS			97	A		2
Pulsed Source Current (Body Diode)	ISM			390	A		2
Diode Forward Voltage	VSD			1.3	V	TJ = 25°C, IS = 58A, VGS = 0V	2
Breakdown Voltage Temp. Coefficient	ΔV(BR)DSS/ΔTJ		0.12		V/°C	Reference to 25°C, ID = 5mA	2
Internal Gate Resistance	RG		0.7		Ω		2
Case-to-Sink Thermal Resistance, Flat Greased Surface, TO-220	RθCS		0.5		°C/W	Case-to-Sink, Flat Greased Surface, TO-220	1
Gate-to-Source Charge	Qgs		19		nC	VGS = 10V, VDS = 50V, ID = 58A	2
Gate-to-Drain (Miller) Charge	Qgd		27		nC	VGS = 10V, VDS = 50V, ID = 58A	2
Total Gate Charge Sync. (Qg - Qgd)	Qsync		56		nC	VGS = 10V, VDS = 50V, ID = 58A	2
Rise Time	tr		52		ns	ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V	2
Turn-Off Delay Time	td(off)		43		ns	ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V	2
Fall Time	tf		57		ns	ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V	2
Output Capacitance	Coss		340		pF	VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5	2
Reverse Transfer Capacitance	Crss		170		pF	VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5	2
Effective Output Capacitance (Energy Related)	Coss eff. (ER)		420		pF	VGS = 0V, VDS = 0V to 80V, See Fig.11	2
Effective Output Capacitance (Time Related)	Coss eff. (TR)		690		pF	VGS = 0V, VDS = 0V to 80V	2
Reverse Recovery Current	IRRM		2.5		A	TJ = 25°C	2

CAD (KiCad official)

Symbol: IRFB4410ZPBF
Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
3D model: TO-220AB (KiCad packages3D, STEP)
3D model files: irfb4410zpbf-etched.step / irfb4410zpbf-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); irfb4410zpbf.step / irfb4410zpbf.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: Infineon Technologies datasheet (12 pp, sha256 a9dbc9f677efadc1, retrieved 2026-10-09, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF