component
IRFB4410ZPBF
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220AB. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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irfb4410zpbf: specified limits as data (metadata.characteristics, 45 rows from the datasheet)
2 files changed
+600−1
README.md+52@@ -21,6 +21,58 @@ IRFB4410ZPBF from Infineon Technologies, in a TO-220AB. Pinout and pin descripti | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Continuous Drain Current (Silicon Limited) at TC = 25°C | ID | | | 97 | A | VGS @ 10V (Silicon Limited) | 1 |+| Continuous Drain Current (Silicon Limited) at TC = 100°C | ID | | | 69 | A | VGS @ 10V (Silicon Limited) | 1 |+| Pulsed Drain Current | IDM | | | 390 | A | | 1 |+| Maximum Power Dissipation | PD | | | 230 | W | TC = 25°C | 1 |+| Linear Derating Factor | | | | 1.5 | W/°C | | 1 |+| Gate-to-Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Peak Diode Recovery | dv/dt | | | 16 | V/ns | | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 175 | °C | | 1 |+| Soldering Temperature, for 10 seconds | | | | 300 | °C | 1.6mm from case | 1 |+| Single Pulse Avalanche Energy | EAS | | | 242 | mJ | Thermally limited | 1 |+| Mounting torque, 6-32 or M3 screw | | | | 1.1 | N m | 6-32 or M3 screw; printed as 10lb in (1.1N m) | 1 |+| Junction-to-Case Thermal Resistance | RθJC | | | 0.65 | °C/W | Junction-to-Case | 1 |+| Junction-to-Ambient Thermal Resistance, TO-220 | RθJA | | | 62 | °C/W | Junction-to-Ambient, TO-220 | 1 |+| Drain-to-Source Breakdown Voltage | V(BR)DSS | 100 | | | V | VGS = 0V, ID = 250μA | 2 |+| Gate Threshold Voltage | VGS(th) | 2 | | 4 | V | VDS = VGS, ID = 150μA | 2 |+| Static Drain-to-Source On-Resistance | RDS(on) | | 7.2 | 9 | mΩ | VGS = 10V, ID = 58A | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 20 | μA | VDS = 100V, VGS = 0V | 2 |+| Drain-to-Source Leakage Current | IDSS | | | 250 | μA | VDS = 80V, VGS = 0V, TJ = 125°C | 2 |+| Gate-to-Source Forward Leakage | IGSS | | | 100 | nA | VGS = 20V | 2 |+| Gate-to-Source Reverse Leakage | IGSS | | | -100 | nA | VGS = -20V | 2 |+| Forward Transconductance | gfs | 140 | | | S | VDS = 10V, ID = 58A | 2 |+| Total Gate Charge | Qg | | 83 | 120 | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |+| Turn-On Delay Time | td(on) | | 16 | | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |+| Input Capacitance | Ciss | | 4820 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 | 2 |+| Reverse Recovery Time (TJ = 25°C) | trr | | 38 | 57 | ns | TJ = 25°C, VR = 85V, IF = 58A | 2 |+| Reverse Recovery Time (TJ = 125°C) | trr | | 46 | 69 | ns | TJ = 125°C, VR = 85V, IF = 58A | 2 |+| Reverse Recovery Charge (TJ = 25°C) | Qrr | | 53 | 80 | nC | TJ = 25°C, di/dt = 100A/μs | 2 |+| Reverse Recovery Charge (TJ = 125°C) | Qrr | | 82 | 120 | nC | TJ = 125°C | 2 |+| Continuous Source Current (Body Diode) | IS | | | 97 | A | | 2 |+| Pulsed Source Current (Body Diode) | ISM | | | 390 | A | | 2 |+| Diode Forward Voltage | VSD | | | 1.3 | V | TJ = 25°C, IS = 58A, VGS = 0V | 2 |+| Breakdown Voltage Temp. Coefficient | ΔV(BR)DSS/ΔTJ | | 0.12 | | V/°C | Reference to 25°C, ID = 5mA | 2 |+| Internal Gate Resistance | RG | | 0.7 | | Ω | | 2 |+| Case-to-Sink Thermal Resistance, Flat Greased Surface, TO-220 | RθCS | | 0.5 | | °C/W | Case-to-Sink, Flat Greased Surface, TO-220 | 1 |+| Gate-to-Source Charge | Qgs | | 19 | | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |+| Gate-to-Drain (Miller) Charge | Qgd | | 27 | | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |+| Total Gate Charge Sync. (Qg - Qgd) | Qsync | | 56 | | nC | VGS = 10V, VDS = 50V, ID = 58A | 2 |+| Rise Time | tr | | 52 | | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |+| Turn-Off Delay Time | td(off) | | 43 | | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |+| Fall Time | tf | | 57 | | ns | ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V | 2 |+| Output Capacitance | Coss | | 340 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 | 2 |+| Reverse Transfer Capacitance | Crss | | 170 | | pF | VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5 | 2 |+| Effective Output Capacitance (Energy Related) | Coss eff. (ER) | | 420 | | pF | VGS = 0V, VDS = 0V to 80V, See Fig.11 | 2 |+| Effective Output Capacitance (Time Related) | Coss eff. (TR) | | 690 | | pF | VGS = 0V, VDS = 0V to 80V | 2 |+| Reverse Recovery Current | IRRM | | 2.5 | | A | TJ = 25°C | 2 |+ ## CAD (KiCad official) - Symbol: `IRFB4410ZPBF`
page.json+548−1@@ -150,6 +150,553 @@ "Package": "TO-220AB", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a9dbc9f677efadc1",+ "rows": [+ {+ "name": "Continuous Drain Current (Silicon Limited) at TC = 25°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 97,+ "conditions": "VGS @ 10V (Silicon Limited)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Silicon Limited) at TC = 100°C",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 69,+ "conditions": "VGS @ 10V (Silicon Limited)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 390,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Maximum Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 230,+ "conditions": "TC = 25°C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Linear Derating Factor",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "W/°C",+ "min": null,+ "typ": null,+ "max": 1.5,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Peak Diode Recovery",+ "symbol": "dv/dt",+ "kind": "absolute_maximum",+ "unit": "V/ns",+ "min": null,+ "typ": null,+ "max": 16,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Soldering Temperature, for 10 seconds",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 300,+ "conditions": "1.6mm from case",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Single Pulse Avalanche Energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 242,+ "conditions": "Thermally limited",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Mounting torque, 6-32 or M3 screw",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "N m",+ "min": null,+ "typ": null,+ "max": 1.1,+ "conditions": "6-32 or M3 screw; printed as 10lb in (1.1N m)",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Case Thermal Resistance",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 0.65,+ "conditions": "Junction-to-Case",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction-to-Ambient Thermal Resistance, TO-220",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 62,+ "conditions": "Junction-to-Ambient, TO-220",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 100,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": null,+ "max": 4,+ "conditions": "VDS = VGS, ID = 150μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-to-Source On-Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 7.2,+ "max": 9,+ "conditions": "VGS = 10V, ID = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "VDS = 100V, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-to-Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 250,+ "conditions": "VDS = 80V, VGS = 0V, TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Forward Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Reverse Leakage",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "VGS = -20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Forward Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": 140,+ "typ": null,+ "max": null,+ "conditions": "VDS = 10V, ID = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 83,+ "max": 120,+ "conditions": "VGS = 10V, VDS = 50V, ID = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 16,+ "max": null,+ "conditions": "ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 4820,+ "max": null,+ "conditions": "VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time (TJ = 25°C)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 38,+ "max": 57,+ "conditions": "TJ = 25°C, VR = 85V, IF = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Time (TJ = 125°C)",+ "symbol": "trr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 46,+ "max": 69,+ "conditions": "TJ = 125°C, VR = 85V, IF = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge (TJ = 25°C)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 53,+ "max": 80,+ "conditions": "TJ = 25°C, di/dt = 100A/μs",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Charge (TJ = 125°C)",+ "symbol": "Qrr",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 82,+ "max": 120,+ "conditions": "TJ = 125°C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Source Current (Body Diode)",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 97,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Source Current (Body Diode)",+ "symbol": "ISM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 390,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1.3,+ "conditions": "TJ = 25°C, IS = 58A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Breakdown Voltage Temp. Coefficient",+ "symbol": "ΔV(BR)DSS/ΔTJ",+ "kind": "temperature_coefficient",+ "unit": "V/°C",+ "min": null,+ "typ": 0.12,+ "max": null,+ "conditions": "Reference to 25°C, ID = 5mA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Internal Gate Resistance",+ "symbol": "RG",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 0.7,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Case-to-Sink Thermal Resistance, Flat Greased Surface, TO-220",+ "symbol": "RθCS",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 0.5,+ "max": null,+ "conditions": "Case-to-Sink, Flat Greased Surface, TO-220",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 19,+ "max": null,+ "conditions": "VGS = 10V, VDS = 50V, ID = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-to-Drain (Miller) Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 27,+ "max": null,+ "conditions": "VGS = 10V, VDS = 50V, ID = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge Sync. (Qg - Qgd)",+ "symbol": "Qsync",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 56,+ "max": null,+ "conditions": "VGS = 10V, VDS = 50V, ID = 58A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 52,+ "max": null,+ "conditions": "ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 43,+ "max": null,+ "conditions": "ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "electrical",+ "unit": "ns",+ "min": null,+ "typ": 57,+ "max": null,+ "conditions": "ID = 58A, RG = 2.7Ω, VGS = 10V, VDD = 65V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 340,+ "max": null,+ "conditions": "VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 170,+ "max": null,+ "conditions": "VGS = 0V, VDS = 50V, f = 1.0MHz, See Fig.5",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Effective Output Capacitance (Energy Related)",+ "symbol": "Coss eff. (ER)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 420,+ "max": null,+ "conditions": "VGS = 0V, VDS = 0V to 80V, See Fig.11",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Effective Output Capacitance (Time Related)",+ "symbol": "Coss eff. (TR)",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 690,+ "max": null,+ "conditions": "VGS = 0V, VDS = 0V to 80V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Recovery Current",+ "symbol": "IRRM",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": 2.5,+ "max": null,+ "conditions": "TJ = 25°C",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -191,4 +738,4 @@ "visibility": { "public": true }-}+}