IKW50N65ES5

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  "slug": "ikw50n65es5",
  "title": "IKW50N65ES5",
  "brief": "Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "package": "TO-247-3",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "IGBT Transistors / Modules",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588894848476172288",
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      {
        "number": "1",
        "name": "Gate",
        "type": "input",
        "description": "Gate control terminal with ±20V typical (±30V transient) operating range and threshold voltage VGE(th) 3.2-4.8V at IC=0.5mA."
      },
      {
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        "description": "Main collector terminal rated 650V, 80A DC (60.5A at TC=100°C), 200A pulsed, with integrated antiparallel RAPID1 fast recovery diode and backside connection."
      },
      {
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        "name": "Emitter",
        "type": "power_in",
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        "guards": "pin_guards 0.1: passed",
        "guard_notes": [],
        "pages_sent": 16,
        "cost_usd": 0.182,
        "at": "2026-09-17T21:42:40"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "seat": "body on z = 0, through-hole leads below",
        "extents_mm": [
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          5.03,
          41.1
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        "zmin_mm": -15.83,
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        "checked": "2026-10-07",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
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      {
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Infineon Technologies",
      "Package": "TO-247-3",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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          "name": "Collector-emitter voltage",
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          "typ": null,
          "max": 650,
          "conditions": "Tvj ≥25°C",
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          "conditions": "TC=25°C, value limited by bondwire",
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          "name": "Pulsed collector current",
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        {
          "name": "Turn off safe operating area",
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          "conditions": "VCE ≤650V, Tvj ≤175°C, tp=1µs",
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          "name": "Transient gate-emitter voltage",
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          "name": "Power dissipation",
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        {
          "name": "Power dissipation",
          "symbol": "Ptot",
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          "conditions": "TC=100°C",
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          "name": "Operating junction temperature",
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        {
          "name": "Storage temperature",
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          "unit": "°C",
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          "typ": null,
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        },
        {
          "name": "Soldering temperature, wave soldering",
          "symbol": "",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "wave soldering 1.6mm (0.063in.) from case for 10s",
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        {
          "name": "Mounting torque, M3 screw",
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          "conditions": "Maximum of mounting processes: 3",
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        {
          "name": "IGBT thermal resistance, junction-case",
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          "max": 0.55,
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        {
          "name": "Diode thermal resistance, junction-case",
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          "kind": "thermal",
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          "min": null,
          "typ": null,
          "max": 0.63,
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        {
          "name": "Thermal resistance junction-ambient",
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          "kind": "thermal",
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        {
          "name": "Collector-emitter breakdown voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": 650,
          "typ": null,
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          "conditions": "VGE=0V, IC=0.20mA",
          "source_page": 5,
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        {
          "name": "Collector-emitter saturation voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 1.35,
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        {
          "name": "Diode forward voltage",
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          "min": null,
          "typ": 1.45,
          "max": 1.7,
          "conditions": "VGE=0V, IF=50.0A, Tvj=25°C",
          "source_page": 5,
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        },
        {
          "name": "Gate-emitter threshold voltage",
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          "kind": "electrical",
          "unit": "V",
          "min": 3.2,
          "typ": 4,
          "max": 4.8,
          "conditions": "IC=0.50mA, VCE=VGE",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage collector current",
          "symbol": "ICES",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 2000,
          "conditions": "VCE=650V, VGE=0V, Tvj=25°C",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage collector current",
          "symbol": "ICES",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": 50,
          "conditions": "VCE=650V, VGE=0V, Tvj=175°C",
          "source_page": 5,
          "source": "datasheet"
        },
        {
          "name": "Gate-emitter leakage current",
          "symbol": "IGES",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VCE=0V, VGE=20V",
          "source_page": 5,
          "source": "datasheet"
        }
      ]
    }
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  "author": {
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    "email": "[email protected]"
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  "updated_at": "2026-09-24T22:29:01.876Z"
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