component
IKW50N65ES5
Public Made by Adomby adom
Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ikw50n65es5: specified limits as data (metadata.characteristics, 26 rows from the datasheet)
2 files changed
+352
README.md+33@@ -21,6 +21,39 @@ IKW50N65ES5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptio | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Collector-emitter voltage | VCE | | | 650 | V | Tvj ≥25°C | 4 |+| DC collector current | IC | | | 80 | A | TC=25°C, value limited by bondwire | 4 |+| DC collector current | IC | | | 60.5 | A | TC=100°C | 4 |+| Pulsed collector current | ICpuls | | | 200 | A | tp limited by Tvj max | 4 |+| Turn off safe operating area | | | | 200 | A | VCE ≤650V, Tvj ≤175°C, tp=1µs | 4 |+| Diode forward current | IF | | | 80 | A | TC=25°C, value limited by bondwire | 4 |+| Diode forward current | IF | | | 60.5 | A | TC=100°C | 4 |+| Diode pulsed current | IFpuls | | | 200 | A | tp limited by Tvj max | 4 |+| Gate-emitter voltage | VGE | -20 | | 20 | V | | 4 |+| Transient gate-emitter voltage | VGE | -30 | | 30 | V | tp ≤10µs, D<0.010 | 4 |+| Power dissipation | Ptot | | | 274 | W | TC=25°C | 4 |+| Power dissipation | Ptot | | | 137 | W | TC=100°C | 4 |+| Operating junction temperature | Tvj | -40 | | 175 | °C | | 4 |+| Storage temperature | Tstg | -55 | | 150 | °C | | 4 |+| Soldering temperature, wave soldering | | | | 260 | °C | wave soldering 1.6mm (0.063in.) from case for 10s | 4 |+| Mounting torque, M3 screw | M | | | 0.6 | Nm | Maximum of mounting processes: 3 | 4 |+| IGBT thermal resistance, junction-case | Rth(j-c) | | | 0.55 | K/W | | 4 |+| Diode thermal resistance, junction-case | Rth(j-c) | | | 0.63 | K/W | | 4 |+| Thermal resistance junction-ambient | Rth(j-a) | | | 40 | K/W | | 4 |+| Collector-emitter breakdown voltage | V(BR)CES | 650 | | | V | VGE=0V, IC=0.20mA | 5 |+| Collector-emitter saturation voltage | VCEsat | | 1.35 | 1.7 | V | VGE=15.0V, IC=50.0A, Tvj=25°C | 5 |+| Diode forward voltage | VF | | 1.45 | 1.7 | V | VGE=0V, IF=50.0A, Tvj=25°C | 5 |+| Gate-emitter threshold voltage | VGE(th) | 3.2 | 4 | 4.8 | V | IC=0.50mA, VCE=VGE | 5 |+| Zero gate voltage collector current | ICES | | | 2000 | µA | VCE=650V, VGE=0V, Tvj=25°C | 5 |+| Zero gate voltage collector current | ICES | | | 50 | µA | VCE=650V, VGE=0V, Tvj=175°C | 5 |+| Gate-emitter leakage current | IGES | | | 100 | nA | VCE=0V, VGE=20V | 5 |+ ## CAD (KiCad official) - Symbol: `IKW50N65ES5`
page.json+319@@ -133,6 +133,325 @@ "Package": "TO-247-3", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "5ce139d56883f221",+ "rows": [+ {+ "name": "Collector-emitter voltage",+ "symbol": "VCE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 650,+ "conditions": "Tvj ≥25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "DC collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "TC=25°C, value limited by bondwire",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "DC collector current",+ "symbol": "IC",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60.5,+ "conditions": "TC=100°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Pulsed collector current",+ "symbol": "ICpuls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "tp limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Turn off safe operating area",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "VCE ≤650V, Tvj ≤175°C, tp=1µs",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode forward current",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 80,+ "conditions": "TC=25°C, value limited by bondwire",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode forward current",+ "symbol": "IF",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60.5,+ "conditions": "TC=100°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode pulsed current",+ "symbol": "IFpuls",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "tp limited by Tvj max",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter voltage",+ "symbol": "VGE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Transient gate-emitter voltage",+ "symbol": "VGE",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -30,+ "typ": null,+ "max": 30,+ "conditions": "tp ≤10µs, D<0.010",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 274,+ "conditions": "TC=25°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Power dissipation",+ "symbol": "Ptot",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 137,+ "conditions": "TC=100°C",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Operating junction temperature",+ "symbol": "Tvj",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -40,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Storage temperature",+ "symbol": "Tstg",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Soldering temperature, wave soldering",+ "symbol": "",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "wave soldering 1.6mm (0.063in.) from case for 10s",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Mounting torque, M3 screw",+ "symbol": "M",+ "kind": "absolute_maximum",+ "unit": "Nm",+ "min": null,+ "typ": null,+ "max": 0.6,+ "conditions": "Maximum of mounting processes: 3",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "IGBT thermal resistance, junction-case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 0.55,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Diode thermal resistance, junction-case",+ "symbol": "Rth(j-c)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 0.63,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Thermal resistance junction-ambient",+ "symbol": "Rth(j-a)",+ "kind": "thermal",+ "unit": "K/W",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "",+ "source_page": 4,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter breakdown voltage",+ "symbol": "V(BR)CES",+ "kind": "electrical",+ "unit": "V",+ "min": 650,+ "typ": null,+ "max": null,+ "conditions": "VGE=0V, IC=0.20mA",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Collector-emitter saturation voltage",+ "symbol": "VCEsat",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.35,+ "max": 1.7,+ "conditions": "VGE=15.0V, IC=50.0A, Tvj=25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Diode forward voltage",+ "symbol": "VF",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 1.45,+ "max": 1.7,+ "conditions": "VGE=0V, IF=50.0A, Tvj=25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter threshold voltage",+ "symbol": "VGE(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 3.2,+ "typ": 4,+ "max": 4.8,+ "conditions": "IC=0.50mA, VCE=VGE",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage collector current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 2000,+ "conditions": "VCE=650V, VGE=0V, Tvj=25°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Zero gate voltage collector current",+ "symbol": "ICES",+ "kind": "electrical",+ "unit": "µA",+ "min": null,+ "typ": null,+ "max": 50,+ "conditions": "VCE=650V, VGE=0V, Tvj=175°C",+ "source_page": 5,+ "source": "datasheet"+ },+ {+ "name": "Gate-emitter leakage current",+ "symbol": "IGES",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VCE=0V, VGE=20V",+ "source_page": 5,+ "source": "datasheet"+ }+ ] } }, "variants": [],