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IKW50N65ES5

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Infineon Technologies IGBT Transistors / Modules, TO-247-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs ikw50n65es5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers ikw50n65es5: viewers · Ray 1mo ago
ikw50n65es5-etched.fit.json ikw50n65es5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ikw50n65es5-etched.glb ikw50n65es5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ikw50n65es5-etched.step ikw50n65es5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ikw50n65es5.glb Publish 0.1.0 · Ray 1mo ago
ikw50n65es5.kicad_mod Publish 0.1.0 · Ray 1mo ago
ikw50n65es5.kicad_sym Publish 0.1.0 · Ray 1mo ago
ikw50n65es5.lbr Publish 0.1.0 · Ray 1mo ago
ikw50n65es5.step Publish 0.1.0 · Ray 1mo ago
package.json ikw50n65es5: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray 1mo ago
page.json ikw50n65es5: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 23d ago
README.md ikw50n65es5: specified limits as data (metadata.characteristics, 26 rows from the datasheet) · Ray 23d ago

IKW50N65ES5

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW50N65ES5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal with ±20V typical (±30V transient) operating range and threshold voltage VGE(th) 3.2-4.8V at IC=0.5mA.
2 Collector bidirectional Main collector terminal rated 650V, 80A DC (60.5A at TC=100°C), 200A pulsed, with integrated antiparallel RAPID1 fast recovery diode and backside connection.
3 Emitter power_in Emitter reference and return terminal serving as ground reference with measured internal inductance of 13.0 nH.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-emitter voltage VCE 650 V Tvj ≥25°C 4
DC collector current IC 80 A TC=25°C, value limited by bondwire 4
DC collector current IC 60.5 A TC=100°C 4
Pulsed collector current ICpuls 200 A tp limited by Tvj max 4
Turn off safe operating area 200 A VCE ≤650V, Tvj ≤175°C, tp=1µs 4
Diode forward current IF 80 A TC=25°C, value limited by bondwire 4
Diode forward current IF 60.5 A TC=100°C 4
Diode pulsed current IFpuls 200 A tp limited by Tvj max 4
Gate-emitter voltage VGE -20 20 V 4
Transient gate-emitter voltage VGE -30 30 V tp ≤10µs, D<0.010 4
Power dissipation Ptot 274 W TC=25°C 4
Power dissipation Ptot 137 W TC=100°C 4
Operating junction temperature Tvj -40 175 °C 4
Storage temperature Tstg -55 150 °C 4
Soldering temperature, wave soldering 260 °C wave soldering 1.6mm (0.063in.) from case for 10s 4
Mounting torque, M3 screw M 0.6 Nm Maximum of mounting processes: 3 4
IGBT thermal resistance, junction-case Rth(j-c) 0.55 K/W 4
Diode thermal resistance, junction-case Rth(j-c) 0.63 K/W 4
Thermal resistance junction-ambient Rth(j-a) 40 K/W 4
Collector-emitter breakdown voltage V(BR)CES 650 V VGE=0V, IC=0.20mA 5
Collector-emitter saturation voltage VCEsat 1.35 1.7 V VGE=15.0V, IC=50.0A, Tvj=25°C 5
Diode forward voltage VF 1.45 1.7 V VGE=0V, IF=50.0A, Tvj=25°C 5
Gate-emitter threshold voltage VGE(th) 3.2 4 4.8 V IC=0.50mA, VCE=VGE 5
Zero gate voltage collector current ICES 2000 µA VCE=650V, VGE=0V, Tvj=25°C 5
Zero gate voltage collector current ICES 50 µA VCE=650V, VGE=0V, Tvj=175°C 5
Gate-emitter leakage current IGES 100 nA VCE=0V, VGE=20V 5

CAD (KiCad official)

  • Symbol: IKW50N65ES5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw50n65es5-etched.step / ikw50n65es5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw50n65es5.step / ikw50n65es5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 5ce139d56883f221, retrieved 2026-09-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF