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Contents

README

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IKW50N65ES5

Infineon Technologies · IGBT Transistors / Modules · TO-247-3

IKW50N65ES5 from Infineon Technologies, in a TO-247-3. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 Gate input Gate control terminal with ±20V typical (±30V transient) operating range and threshold voltage VGE(th) 3.2-4.8V at IC=0.5mA.
2 Collector bidirectional Main collector terminal rated 650V, 80A DC (60.5A at TC=100°C), 200A pulsed, with integrated antiparallel RAPID1 fast recovery diode and backside connection.
3 Emitter power_in Emitter reference and return terminal serving as ground reference with measured internal inductance of 13.0 nH.

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-247-3
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: IKW50N65ES5
  • Footprint: Package_TO_SOT_THT:TO-247-3_Vertical
  • 3D model: TO-247-3 (KiCad packages3D, STEP)
  • 3D model files: ikw50n65es5-etched.step / ikw50n65es5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ikw50n65es5.step / ikw50n65es5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (16 pp, sha256 5ce139d56883f221, retrieved 2026-09-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF