CSD15571Q2

{
  "schema_version": 1,
  "type": "component",
  "slug": "csd15571q2",
  "title": "CSD15571Q2",
  "brief": "Texas Instruments MOSFETs, WSON-6(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
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  "component": {
    "mpn": "CSD15571Q2",
    "manufacturer": "Texas Instruments",
    "package": "WSON-6(2x2)",
    "pin_count": 7,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://www.ti.com/lit/ds/symlink/csd15571q2.pdf",
    "parts": {
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      "lbr": "csd15571q2.lbr"
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    "distributor_links": {
      "lcsc": "C412825"
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    "pins": [
      {
        "number": "1",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel power MOSFET; rated for a maximum drain-to-source voltage (BVDSS) of 20 V and continuous drain current up to 10 A (22 A package-limited), internally common with the other four drain pins."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel power MOSFET; rated for a maximum drain-to-source voltage (BVDSS) of 20 V and continuous drain current up to 10 A (22 A package-limited), internally common with the other four drain pins."
      },
      {
        "number": "3",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel power MOSFET; rated for a maximum drain-to-source voltage (BVDSS) of 20 V and continuous drain current up to 10 A (22 A package-limited), internally common with the other four drain pins."
      },
      {
        "number": "4",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel power MOSFET; rated for a maximum drain-to-source voltage (BVDSS) of 20 V and continuous drain current up to 10 A (22 A package-limited), internally common with the other four drain pins."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the N-channel power MOSFET; rated for a maximum drain-to-source voltage (BVDSS) of 20 V and continuous drain current up to 10 A (22 A package-limited), internally common with the other four drain pins."
      },
      {
        "number": "6",
        "name": "G",
        "type": "input",
        "description": "Gate control terminal; maximum gate-to-source voltage is ±20 V, with gate-to-source threshold voltage VGS(th) specified 1.10 V to 1.90 V (typical 1.45 V) at VDS=VGS, IDS=250 µA."
      },
      {
        "number": "7",
        "name": "EP",
        "type": "passive",
        "description": "Exposed pad (from the footprint; not named in the datasheet pin table)."
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          "exposed pad 7 added from the footprint"
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        "cost_usd": 0.2748,
        "at": "2026-09-23T00:57:01"
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        "pages": 10,
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      "pins": {
        "total": 7,
        "described": 7,
        "cites_pages": true,
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        "extents_mm": [
          2,
          1.98,
          0.82
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
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        "checked": "2026-10-07",
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  },
  "metadata": {
    "specs": {
      "Manufacturer": "Texas Instruments",
      "Package": "WSON-6(2x2)",
      "Category": "Transistors/Thyristors",
      "Pins": "7"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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      "rows": [
        {
          "name": "Drain to Source Voltage",
          "symbol": "VDS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": null,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Gate to Source Voltage",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "",
          "source_page": 1,
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        },
        {
          "name": "Continuous Drain Current (Package Limit)",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 22,
          "conditions": "Package limit",
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        },
        {
          "name": "Continuous Drain Current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 10,
          "conditions": "(1) RθJA = 50 on 1in² Cu (2 oz.) on .060\" thick FR4 PCB",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Pulsed Drain Current, TA = 25°C",
          "symbol": "IDM",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 52,
          "conditions": "(2) Pulse duration 10μs, duty cycle ≤2%",
          "source_page": 1,
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        },
        {
          "name": "Power Dissipation",
          "symbol": "PD",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 2.5,
          "conditions": "(1) RθJA = 50 on 1in² Cu (2 oz.) on .060\" thick FR4 PCB",
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        {
          "name": "Operating Junction and Storage Temperature Range",
          "symbol": "TJ, TSTG",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Avalanche Energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 18,
          "conditions": "ID = 19A, L = 0.1mH, RG = 25Ω",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Drain to Source Voltage",
          "symbol": "BVDSS",
          "kind": "electrical",
          "unit": "V",
          "min": 20,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0V, ID = 250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain to Source Leakage Current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "μA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VGS = 0V, VDS = 20V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate to Source Leakage Current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VDS = 0V, VGS = 20V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate to Source Threshold Voltage",
          "symbol": "VGS(th)",
          "kind": "electrical",
          "unit": "V",
          "min": 1.1,
          "typ": 1.45,
          "max": 1.9,
          "conditions": "VDS = VGS, IDS = 250μA",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain to Source On Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 16,
          "max": 19.2,
          "conditions": "VGS = 4.5V, IDS = 5A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Drain to Source On Resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "mΩ",
          "min": null,
          "typ": 12,
          "max": 15,
          "conditions": "VGS = 10V, IDS = 5A",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Input Capacitance",
          "symbol": "CISS",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 320,
          "max": 419,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Output Capacitance",
          "symbol": "COSS",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 184,
          "max": 239,
          "conditions": "VGS = 0V, VDS = 10V, f = 1MHz",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Reverse Transfer Capacitance",
          "symbol": "CRSS",
          "kind": "electrical",
          "unit": "pF",
          "min": null,
          "typ": 32,
          "max": 42,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Series Gate Resistance",
          "symbol": "Rg",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 3.8,
          "max": 7.6,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate Charge Total (4.5V)",
          "symbol": "Qg",
          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 2.5,
          "max": 3.3,
          "conditions": "",
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        {
          "name": "Gate Charge Total (10V)",
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          "kind": "electrical",
          "unit": "nC",
          "min": null,
          "typ": 5.1,
          "max": 6.7,
          "conditions": "",
          "source_page": 2,
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        },
        {
          "name": "Diode Forward Voltage",
          "symbol": "VSD",
          "kind": "electrical",
          "unit": "V",
          "min": null,
          "typ": 0.82,
          "max": 1,
          "conditions": "IDS = 5A, VGS = 0V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance Junction to Case",
          "symbol": "RθJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 4.5,
          "max": null,
          "conditions": "(1) RθJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB",
          "source_page": 2,
          "source": "datasheet"
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        {
          "name": "Thermal Resistance Junction to Ambient",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 65,
          "max": null,
          "conditions": "(1)(2) Device mounted on FR4 with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance Junction to Ambient (max, 1 inch² pad)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 65,
          "conditions": "Mounted on 1 inch² (6.45 cm²) of 2-oz. (0.071-mm thick) Cu",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal Resistance Junction to Ambient (max, minimum pad)",
          "symbol": "RθJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 235,
          "conditions": "Mounted on minimum pad area of 2-oz. (0.071-mm thick) Cu",
          "source_page": 3,
          "source": "datasheet"
        }
      ]
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  "updated_at": "2026-09-24T19:34:06.840Z"
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