component
CSD15571Q2
Public Made by Adomby adom
Texas Instruments MOSFETs, WSON-6(2x2). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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csd15571q2: specified limits as data (metadata.characteristics, 25 rows from the datasheet)
2 files changed
+339
README.md+32@@ -25,6 +25,38 @@ CSD15571Q2 from Texas Instruments, in a WSON-6(2x2). Pinout and pin descriptions | Category | Transistors/Thyristors | | Pins | 7 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Drain to Source Voltage | VDS | | | 20 | V | | 1 |+| Gate to Source Voltage | VGS | -20 | | 20 | V | | 1 |+| Continuous Drain Current (Package Limit) | ID | | | 22 | A | Package limit | 1 |+| Continuous Drain Current | ID | | | 10 | A | (1) RθJA = 50 on 1in² Cu (2 oz.) on .060" thick FR4 PCB | 1 |+| Pulsed Drain Current, TA = 25°C | IDM | | | 52 | A | (2) Pulse duration 10μs, duty cycle ≤2% | 1 |+| Power Dissipation | PD | | | 2.5 | W | (1) RθJA = 50 on 1in² Cu (2 oz.) on .060" thick FR4 PCB | 1 |+| Operating Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | °C | | 1 |+| Avalanche Energy, single pulse | EAS | | | 18 | mJ | ID = 19A, L = 0.1mH, RG = 25Ω | 1 |+| Drain to Source Voltage | BVDSS | 20 | | | V | VGS = 0V, ID = 250μA | 2 |+| Drain to Source Leakage Current | IDSS | | | 1 | μA | VGS = 0V, VDS = 20V | 2 |+| Gate to Source Leakage Current | IGSS | | | 100 | nA | VDS = 0V, VGS = 20V | 2 |+| Gate to Source Threshold Voltage | VGS(th) | 1.1 | 1.45 | 1.9 | V | VDS = VGS, IDS = 250μA | 2 |+| Drain to Source On Resistance | RDS(on) | | 16 | 19.2 | mΩ | VGS = 4.5V, IDS = 5A | 2 |+| Drain to Source On Resistance | RDS(on) | | 12 | 15 | mΩ | VGS = 10V, IDS = 5A | 2 |+| Input Capacitance | CISS | | 320 | 419 | pF | | 2 |+| Output Capacitance | COSS | | 184 | 239 | pF | VGS = 0V, VDS = 10V, f = 1MHz | 2 |+| Reverse Transfer Capacitance | CRSS | | 32 | 42 | pF | | 2 |+| Series Gate Resistance | Rg | | 3.8 | 7.6 | Ω | | 2 |+| Gate Charge Total (4.5V) | Qg | | 2.5 | 3.3 | nC | | 2 |+| Gate Charge Total (10V) | Qg | | 5.1 | 6.7 | nC | | 2 |+| Diode Forward Voltage | VSD | | 0.82 | 1 | V | IDS = 5A, VGS = 0V | 2 |+| Thermal Resistance Junction to Case | RθJC | | 4.5 | | °C/W | (1) RθJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB | 2 |+| Thermal Resistance Junction to Ambient | RθJA | | 65 | | °C/W | (1)(2) Device mounted on FR4 with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu | 2 |+| Thermal Resistance Junction to Ambient (max, 1 inch² pad) | RθJA | | | 65 | °C/W | Mounted on 1 inch² (6.45 cm²) of 2-oz. (0.071-mm thick) Cu | 3 |+| Thermal Resistance Junction to Ambient (max, minimum pad) | RθJA | | | 235 | °C/W | Mounted on minimum pad area of 2-oz. (0.071-mm thick) Cu | 3 |+ ## CAD (KiCad official) - Symbol: `CSD15571Q2`
page.json+307@@ -160,6 +160,313 @@ "Package": "WSON-6(2x2)", "Category": "Transistors/Thyristors", "Pins": "7"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "a6f518d13e6c9d3b",+ "rows": [+ {+ "name": "Drain to Source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current (Package Limit)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 22,+ "conditions": "Package limit",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 10,+ "conditions": "(1) RθJA = 50 on 1in² Cu (2 oz.) on .060\" thick FR4 PCB",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current, TA = 25°C",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 52,+ "conditions": "(2) Pulse duration 10μs, duty cycle ≤2%",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 2.5,+ "conditions": "(1) RθJA = 50 on 1in² Cu (2 oz.) on .060\" thick FR4 PCB",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "°C",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche Energy, single pulse",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 18,+ "conditions": "ID = 19A, L = 0.1mH, RG = 25Ω",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": 20,+ "typ": null,+ "max": null,+ "conditions": "VGS = 0V, ID = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source Leakage Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": 1,+ "conditions": "VGS = 0V, VDS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "VDS = 0V, VGS = 20V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.1,+ "typ": 1.45,+ "max": 1.9,+ "conditions": "VDS = VGS, IDS = 250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 16,+ "max": 19.2,+ "conditions": "VGS = 4.5V, IDS = 5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain to Source On Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 12,+ "max": 15,+ "conditions": "VGS = 10V, IDS = 5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "CISS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 320,+ "max": 419,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "COSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 184,+ "max": 239,+ "conditions": "VGS = 0V, VDS = 10V, f = 1MHz",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "CRSS",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 32,+ "max": 42,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Series Gate Resistance",+ "symbol": "Rg",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 3.8,+ "max": 7.6,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Charge Total (4.5V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 2.5,+ "max": 3.3,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Charge Total (10V)",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 5.1,+ "max": 6.7,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 0.82,+ "max": 1,+ "conditions": "IDS = 5A, VGS = 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 4.5,+ "max": null,+ "conditions": "(1) RθJC is determined with the device mounted on a 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu pad on a 1.5-inch × 1.5-inch (3.81-cm × 3.81-cm), 0.06-inch (1.52-mm) thick FR4 PCB",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": 65,+ "max": null,+ "conditions": "(1)(2) Device mounted on FR4 with 1-inch² (6.45-cm²), 2-oz. (0.071-mm thick) Cu",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient (max, 1 inch² pad)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 65,+ "conditions": "Mounted on 1 inch² (6.45 cm²) of 2-oz. (0.071-mm thick) Cu",+ "source_page": 3,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction to Ambient (max, minimum pad)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "°C/W",+ "min": null,+ "typ": null,+ "max": 235,+ "conditions": "Mounted on minimum pad area of 2-oz. (0.071-mm thick) Cu",+ "source_page": 3,+ "source": "datasheet"+ }+ ] } }, "variants": [],