CI60N120SM4

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  "title": "CI60N120SM4",
  "brief": "Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "category": "Silicon Carbide (SiC) Devices",
    "subcategory": "Silicon Carbide Field Effect Transistor (MOSFET)",
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        "name": "D",
        "type": "bidirectional",
        "description": "Drain terminal; maximum drain-source voltage of 1200 V, continuous drain current of 60 A at VGS = 20 V and TC = 25°C, with body diode capable of 20 A continuous forward current."
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        "name": "KS",
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        "description": "Gate terminal; control input with recommended operational voltage range of -5 V to +20 V, absolute maximum -10 V to +25 V, and gate threshold voltage of 2.0 to 4.0 V."
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      "Package": "TO-247-4L",
      "Category": "Silicon Carbide (SiC) Devices",
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          "name": "Reverse Transfer Capacitance",
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          "name": "Turn-On Switching Energy",
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          "name": "Turn-Off Switching Energy",
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        {
          "name": "Turn-On Delay Time",
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          "name": "Rise Time",
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          "name": "Gate to Source Charge",
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