component
CI60N120SM4
Public Made by Adomby adom
Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ci60n120sm4: specified limits as data (metadata.characteristics, 37 rows from the datasheet)
2 files changed
+495
README.md+44@@ -22,6 +22,50 @@ CI60N120SM4 from Tokmas, in a TO-247-4L. Pinout and pin descriptions extracted f | Category | Silicon Carbide (SiC) Devices | | Pins | 4 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-Source Voltage (absolute maximum) | VGSmax | -10 | | 25 | V | Absolute maximum values | 1 |+| Gate-Source Voltage (recommended operational) | VGSop | -5 | | 20 | V | Recommended operational values | 1 |+| Drain-Source Voltage | VDSmax | | | 1200 | V | VGS = 0 V, ID = 100 μA | 1 |+| Continuous Drain Current | ID | | | 60 | A | VGS = 20 V, TC = 25˚C | 1 |+| Continuous Drain Current | ID | | | 40 | A | VGS = 20 V, TC = 100˚C | 1 |+| Pulsed Drain Current | ID(pulse) | | | 160 | A | Pulse width tP limited by Tjmax | 1 |+| Power Dissipation | PD | | | 330 | W | TC=25˚C, TJ = 150 ˚C | 1 |+| Operating Junction and Storage Temperature | TJ , Tstg | -55 | | 175 | ˚C | | 1 |+| Solder Temperature | TL | | | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 |+| Mounting Torque | Md | 1 | | 8.8 | Nm | M3 or 6-32 screw | 1 |+| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 | | | V | VGS=0V, ID=100μA | 2 |+| Gate Threshold Voltage | VGS(th) | 2 | 2.5 | 4 | V | VGS= VDS, IDS=10mA, TC=25˚C | 2 |+| Gate Threshold Voltage | VGS(th) | 1.8 | | | V | VGS= VDS, IDS=10mA, TC=150˚C | 2 |+| Zero Gate Voltage Drain Current | IDSS | | 1 | 100 | μA | VDS= 1200V, VGS=0V | 2 |+| Gate-Source Leakage Current | IGSS | | | 200 | nA | VGS= 20 V, VDS= 0V | 2 |+| Drain-Source on-state Resistance | RDS(on) | | 45 | 55 | mΩ | VGS= 20 V, ID=40A, TC=25˚C | 2 |+| Drain-Source on-state Resistance | RDS(on) | | | 58 | mΩ | VGS= 20 V, ID=40A, TC=150˚C | 2 |+| Transconductance | gfs | | 14.1 | | S | VGS = 20 V, ID = 40A, TJ = 25 ˚C | 2 |+| Transconductance | gfs | | 12.5 | | S | VGS = 20 V, ID = 40A, TJ = 150 ˚C | 2 |+| Input Capacitance | Ciss | | 3550 | | pF | VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV | 2 |+| Output Capacitance | Coss | | 162 | | pF | VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV | 2 |+| Reverse Transfer Capacitance | Crss | | 29 | | pF | VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV | 2 |+| Turn-On Switching Energy | EON | | 1.5 | | mJ | VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH | 2 |+| Turn-Off Switching Energy | EOFF | | 0.7 | | mJ | VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH | 2 |+| Turn-On Delay Time | td(on) | | 60 | | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |+| Rise Time | tr | | 140 | | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |+| Turn-Off Delay Time | td(off) | | 50 | | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |+| Fall Time | tf | | 42 | | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |+| Internal Gate Resistance | RG(int) | | 1 | | Ω | f=1 MHz, VAC=25mV | 2 |+| Gate to Source Charge | Qgs | | 40 | | nC | VDD=800V, VGS=-5/20 V, ID = 40A | 2 |+| Gate to Drain Charge | Qgd | | 55 | | nC | VDD=800V, VGS=-5/20 V, ID = 40A | 2 |+| Total Gate Charge | Qg | | 160 | | nC | VDD=800V, VGS=-5/20 V, ID = 40A | 2 |+| Diode Forward Voltage | VSD | | 3.6 | | V | VGS = -5V, ISD = 20 A, TJ = 25 °C | 2 |+| Diode Forward Voltage | VSD | | 3.3 | | V | VGS =- 5V, ISD = 20 A, TJ = 150 °C | 2 |+| Continuous Diode Forward Current | IS | | | 20 | A | TC = 25˚C | 2 |+| Thermal Resistance, Junction to Case | RθJC | | 0.4 | | ℃/W | Fig. 12 | 2 |+| Thermal Resistance, Junction to Ambient | RθJA | | 38 | | ℃/W | | 2 |+ ## CAD (KiCad official) - Symbol: `CI60N120SM4`
page.json+451@@ -139,6 +139,457 @@ "Package": "TO-247-4L", "Category": "Silicon Carbide (SiC) Devices", "Pins": "4"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "8dba74ac9f9a6fd2",+ "rows": [+ {+ "name": "Gate-Source Voltage (absolute maximum)",+ "symbol": "VGSmax",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -10,+ "typ": null,+ "max": 25,+ "conditions": "Absolute maximum values",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Voltage (recommended operational)",+ "symbol": "VGSop",+ "kind": "recommended_operating",+ "unit": "V",+ "min": -5,+ "typ": null,+ "max": 20,+ "conditions": "Recommended operational values",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Voltage",+ "symbol": "VDSmax",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": 1200,+ "conditions": "VGS = 0 V, ID = 100 μA",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 60,+ "conditions": "VGS = 20 V, TC = 25˚C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Continuous Drain Current",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 40,+ "conditions": "VGS = 20 V, TC = 100˚C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "ID(pulse)",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 160,+ "conditions": "Pulse width tP limited by Tjmax",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Power Dissipation",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 330,+ "conditions": "TC=25˚C, TJ = 150 ˚C",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Operating Junction and Storage Temperature",+ "symbol": "TJ , Tstg",+ "kind": "absolute_maximum",+ "unit": "˚C",+ "min": -55,+ "typ": null,+ "max": 175,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Solder Temperature",+ "symbol": "TL",+ "kind": "absolute_maximum",+ "unit": "˚C",+ "min": null,+ "typ": null,+ "max": 260,+ "conditions": "1.6mm (0.063”) from case for 10s",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Mounting Torque",+ "symbol": "Md",+ "kind": "absolute_maximum",+ "unit": "Nm",+ "min": 1,+ "typ": null,+ "max": 8.8,+ "conditions": "M3 or 6-32 screw",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "V(BR)DSS",+ "kind": "electrical",+ "unit": "V",+ "min": 1200,+ "typ": null,+ "max": null,+ "conditions": "VGS=0V, ID=100μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 2,+ "typ": 2.5,+ "max": 4,+ "conditions": "VGS= VDS, IDS=10mA, TC=25˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": 1.8,+ "typ": null,+ "max": null,+ "conditions": "VGS= VDS, IDS=10mA, TC=150˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": 1,+ "max": 100,+ "conditions": "VDS= 1200V, VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate-Source Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": null,+ "typ": null,+ "max": 200,+ "conditions": "VGS= 20 V, VDS= 0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source on-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 45,+ "max": 55,+ "conditions": "VGS= 20 V, ID=40A, TC=25˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source on-state Resistance",+ "symbol": "RDS(on)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": null,+ "max": 58,+ "conditions": "VGS= 20 V, ID=40A, TC=150˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 14.1,+ "max": null,+ "conditions": "VGS = 20 V, ID = 40A, TJ = 25 ˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Transconductance",+ "symbol": "gfs",+ "kind": "electrical",+ "unit": "S",+ "min": null,+ "typ": 12.5,+ "max": null,+ "conditions": "VGS = 20 V, ID = 40A, TJ = 150 ˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Input Capacitance",+ "symbol": "Ciss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 3550,+ "max": null,+ "conditions": "VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Output Capacitance",+ "symbol": "Coss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 162,+ "max": null,+ "conditions": "VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Reverse Transfer Capacitance",+ "symbol": "Crss",+ "kind": "electrical",+ "unit": "pF",+ "min": null,+ "typ": 29,+ "max": null,+ "conditions": "VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Switching Energy",+ "symbol": "EON",+ "kind": "electrical",+ "unit": "mJ",+ "min": null,+ "typ": 1.5,+ "max": null,+ "conditions": "VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Switching Energy",+ "symbol": "EOFF",+ "kind": "electrical",+ "unit": "mJ",+ "min": null,+ "typ": 0.7,+ "max": null,+ "conditions": "VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-On Delay Time",+ "symbol": "td(on)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 60,+ "max": null,+ "conditions": "VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Rise Time",+ "symbol": "tr",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 140,+ "max": null,+ "conditions": "VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Turn-Off Delay Time",+ "symbol": "td(off)",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 50,+ "max": null,+ "conditions": "VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Fall Time",+ "symbol": "tf",+ "kind": "timing",+ "unit": "ns",+ "min": null,+ "typ": 42,+ "max": null,+ "conditions": "VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Internal Gate Resistance",+ "symbol": "RG(int)",+ "kind": "electrical",+ "unit": "Ω",+ "min": null,+ "typ": 1,+ "max": null,+ "conditions": "f=1 MHz, VAC=25mV",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Source Charge",+ "symbol": "Qgs",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 40,+ "max": null,+ "conditions": "VDD=800V, VGS=-5/20 V, ID = 40A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate to Drain Charge",+ "symbol": "Qgd",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 55,+ "max": null,+ "conditions": "VDD=800V, VGS=-5/20 V, ID = 40A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Total Gate Charge",+ "symbol": "Qg",+ "kind": "electrical",+ "unit": "nC",+ "min": null,+ "typ": 160,+ "max": null,+ "conditions": "VDD=800V, VGS=-5/20 V, ID = 40A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 3.6,+ "max": null,+ "conditions": "VGS = -5V, ISD = 20 A, TJ = 25 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": 3.3,+ "max": null,+ "conditions": "VGS =- 5V, ISD = 20 A, TJ = 150 °C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Continuous Diode Forward Current",+ "symbol": "IS",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": 20,+ "conditions": "TC = 25˚C",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Case",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 0.4,+ "max": null,+ "conditions": "Fig. 12",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance, Junction to Ambient",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 38,+ "max": null,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ }+ ] } }, "variants": [],