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CI60N120SM4

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Tokmas Silicon Carbide Field Effect Transistor (MOSFET), TO-247-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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docs ci60n120sm4: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
viewers ci60n120sm4: viewers · Ray
ci60n120sm4-etched.fit.json ci60n120sm4: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
ci60n120sm4-etched.glb ci60n120sm4: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
ci60n120sm4-etched.step ci60n120sm4: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray
ci60n120sm4.glb Publish 0.1.0 · Ray
ci60n120sm4.kicad_mod Publish 0.1.0 · Ray
ci60n120sm4.kicad_sym Publish 0.1.0 · Ray
ci60n120sm4.lbr Publish 0.1.0 · Ray
ci60n120sm4.step Publish 0.1.0 · Ray
package.json ci60n120sm4: component.models_3d pose record per STEP (Z-up, seated z=0, pad-centre origin, identity binding) · Ray
page.json ci60n120sm4: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray
README.md ci60n120sm4: specified limits as data (metadata.characteristics, 37 rows from the datasheet) · Ray

CI60N120SM4

Tokmas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

CI60N120SM4 from Tokmas, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D bidirectional Drain terminal; maximum drain-source voltage of 1200 V, continuous drain current of 60 A at VGS = 20 V and TC = 25°C, with body diode capable of 20 A continuous forward current.
2 S power_in Source terminal; main current return and reference point for gate-source voltage measurements and control.
3 KS passive Kelvin source terminal; isolated source connection for accurate gate-source voltage measurement and feedback without main current flow.
4 G input Gate terminal; control input with recommended operational voltage range of -5 V to +20 V, absolute maximum -10 V to +25 V, and gate threshold voltage of 2.0 to 4.0 V.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Voltage (absolute maximum) VGSmax -10 25 V Absolute maximum values 1
Gate-Source Voltage (recommended operational) VGSop -5 20 V Recommended operational values 1
Drain-Source Voltage VDSmax 1200 V VGS = 0 V, ID = 100 μA 1
Continuous Drain Current ID 60 A VGS = 20 V, TC = 25˚C 1
Continuous Drain Current ID 40 A VGS = 20 V, TC = 100˚C 1
Pulsed Drain Current ID(pulse) 160 A Pulse width tP limited by Tjmax 1
Power Dissipation PD 330 W TC=25˚C, TJ = 150 ˚C 1
Operating Junction and Storage Temperature TJ , Tstg -55 175 ˚C 1
Solder Temperature TL 260 ˚C 1.6mm (0.063”) from case for 10s 1
Mounting Torque Md 1 8.8 Nm M3 or 6-32 screw 1
Drain-Source Breakdown Voltage V(BR)DSS 1200 V VGS=0V, ID=100μA 2
Gate Threshold Voltage VGS(th) 2 2.5 4 V VGS= VDS, IDS=10mA, TC=25˚C 2
Gate Threshold Voltage VGS(th) 1.8 V VGS= VDS, IDS=10mA, TC=150˚C 2
Zero Gate Voltage Drain Current IDSS 1 100 μA VDS= 1200V, VGS=0V 2
Gate-Source Leakage Current IGSS 200 nA VGS= 20 V, VDS= 0V 2
Drain-Source on-state Resistance RDS(on) 45 55 mΩ VGS= 20 V, ID=40A, TC=25˚C 2
Drain-Source on-state Resistance RDS(on) 58 mΩ VGS= 20 V, ID=40A, TC=150˚C 2
Transconductance gfs 14.1 S VGS = 20 V, ID = 40A, TJ = 25 ˚C 2
Transconductance gfs 12.5 S VGS = 20 V, ID = 40A, TJ = 150 ˚C 2
Input Capacitance Ciss 3550 pF VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV 2
Output Capacitance Coss 162 pF VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV 2
Reverse Transfer Capacitance Crss 29 pF VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV 2
Turn-On Switching Energy EON 1.5 mJ VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH 2
Turn-Off Switching Energy EOFF 0.7 mJ VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH 2
Turn-On Delay Time td(on) 60 ns VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS 2
Rise Time tr 140 ns VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS 2
Turn-Off Delay Time td(off) 50 ns VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS 2
Fall Time tf 42 ns VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS 2
Internal Gate Resistance RG(int) 1 Ω f=1 MHz, VAC=25mV 2
Gate to Source Charge Qgs 40 nC VDD=800V, VGS=-5/20 V, ID = 40A 2
Gate to Drain Charge Qgd 55 nC VDD=800V, VGS=-5/20 V, ID = 40A 2
Total Gate Charge Qg 160 nC VDD=800V, VGS=-5/20 V, ID = 40A 2
Diode Forward Voltage VSD 3.6 V VGS = -5V, ISD = 20 A, TJ = 25 °C 2
Diode Forward Voltage VSD 3.3 V VGS =- 5V, ISD = 20 A, TJ = 150 °C 2
Continuous Diode Forward Current IS 20 A TC = 25˚C 2
Thermal Resistance, Junction to Case RθJC 0.4 ℃/W Fig. 12 2
Thermal Resistance, Junction to Ambient RθJA 38 ℃/W 2

CAD (KiCad official)

  • Symbol: CI60N120SM4
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: ci60n120sm4-etched.step / ci60n120sm4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ci60n120sm4.step / ci60n120sm4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 8dba74ac9f9a6fd2, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF