# CI60N120SM4

**Tokmas** · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

CI60N120SM4 from Tokmas, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | bidirectional | Drain terminal; maximum drain-source voltage of 1200 V, continuous drain current of 60 A at VGS = 20 V and TC = 25°C, with body diode capable of 20 A continuous forward current. |
| 2 | S | power_in | Source terminal; main current return and reference point for gate-source voltage measurements and control. |
| 3 | KS | passive | Kelvin source terminal; isolated source connection for accurate gate-source voltage measurement and feedback without main current flow. |
| 4 | G | input | Gate terminal; control input with recommended operational voltage range of -5 V to +20 V, absolute maximum -10 V to +25 V, and gate threshold voltage of 2.0 to 4.0 V. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Tokmas |
| Package | TO-247-4L |
| Category | Silicon Carbide (SiC) Devices |
| Pins | 4 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Voltage (absolute maximum) | VGSmax | -10 |  | 25 | V | Absolute maximum values | 1 |
| Gate-Source Voltage (recommended operational) | VGSop | -5 |  | 20 | V | Recommended operational values | 1 |
| Drain-Source Voltage | VDSmax |  |  | 1200 | V | VGS = 0 V, ID = 100 μA | 1 |
| Continuous Drain Current | ID |  |  | 60 | A | VGS = 20 V, TC = 25˚C | 1 |
| Continuous Drain Current | ID |  |  | 40 | A | VGS = 20 V, TC = 100˚C | 1 |
| Pulsed Drain Current | ID(pulse) |  |  | 160 | A | Pulse width tP limited by Tjmax | 1 |
| Power Dissipation | PD |  |  | 330 | W | TC=25˚C, TJ = 150 ˚C | 1 |
| Operating Junction and Storage Temperature | TJ , Tstg | -55 |  | 175 | ˚C |  | 1 |
| Solder Temperature | TL |  |  | 260 | ˚C | 1.6mm (0.063”) from case for 10s | 1 |
| Mounting Torque | Md | 1 |  | 8.8 | Nm | M3 or 6-32 screw | 1 |
| Drain-Source Breakdown Voltage | V(BR)DSS | 1200 |  |  | V | VGS=0V, ID=100μA | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | 2.5 | 4 | V | VGS= VDS, IDS=10mA, TC=25˚C | 2 |
| Gate Threshold Voltage | VGS(th) | 1.8 |  |  | V | VGS= VDS, IDS=10mA, TC=150˚C | 2 |
| Zero Gate Voltage Drain Current | IDSS |  | 1 | 100 | μA | VDS= 1200V, VGS=0V | 2 |
| Gate-Source Leakage Current | IGSS |  |  | 200 | nA | VGS= 20 V, VDS= 0V | 2 |
| Drain-Source on-state Resistance | RDS(on) |  | 45 | 55 | mΩ | VGS= 20 V, ID=40A, TC=25˚C | 2 |
| Drain-Source on-state Resistance | RDS(on) |  |  | 58 | mΩ | VGS= 20 V, ID=40A, TC=150˚C | 2 |
| Transconductance | gfs |  | 14.1 |  | S | VGS = 20 V, ID = 40A, TJ = 25 ˚C | 2 |
| Transconductance | gfs |  | 12.5 |  | S | VGS = 20 V, ID = 40A, TJ = 150 ˚C | 2 |
| Input Capacitance | Ciss |  | 3550 |  | pF | VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV | 2 |
| Output Capacitance | Coss |  | 162 |  | pF | VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV | 2 |
| Reverse Transfer Capacitance | Crss |  | 29 |  | pF | VGS=0V, VDS=1000 V, f=1MHz, VAC=25 mV | 2 |
| Turn-On Switching Energy | EON |  | 1.5 |  | mJ | VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH | 2 |
| Turn-Off Switching Energy | EOFF |  | 0.7 |  | mJ | VDS=800V, VGS=-5/20V, ID= 40A, RG(ext) = 5Ω, L= 80 μH | 2 |
| Turn-On Delay Time | td(on) |  | 60 |  | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |
| Rise Time | tr |  | 140 |  | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |
| Turn-Off Delay Time | td(off) |  | 50 |  | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |
| Fall Time | tf |  | 42 |  | ns | VDD=800V, VGS=-5/20 V, ID = 40A, RG(ext) = 5 Ω, RL=20Ω, Timing relative to VDS | 2 |
| Internal Gate Resistance | RG(int) |  | 1 |  | Ω | f=1 MHz, VAC=25mV | 2 |
| Gate to Source Charge | Qgs |  | 40 |  | nC | VDD=800V, VGS=-5/20 V, ID = 40A | 2 |
| Gate to Drain Charge | Qgd |  | 55 |  | nC | VDD=800V, VGS=-5/20 V, ID = 40A | 2 |
| Total Gate Charge | Qg |  | 160 |  | nC | VDD=800V, VGS=-5/20 V, ID = 40A | 2 |
| Diode Forward Voltage | VSD |  | 3.6 |  | V | VGS = -5V, ISD = 20 A, TJ = 25 °C | 2 |
| Diode Forward Voltage | VSD |  | 3.3 |  | V | VGS =- 5V, ISD = 20 A, TJ = 150 °C | 2 |
| Continuous Diode Forward Current | IS |  |  | 20 | A | TC = 25˚C | 2 |
| Thermal Resistance, Junction to Case | RθJC |  | 0.4 |  | ℃/W | Fig. 12 | 2 |
| Thermal Resistance, Junction to Ambient | RθJA |  | 38 |  | ℃/W |  | 2 |

## CAD (KiCad official)

- Symbol: `CI60N120SM4`
- Footprint: `Package_TO_SOT_THT:TO-247-4_Vertical`
- 3D model: TO-247-4L (KiCad packages3D, STEP)
- 3D model files: `ci60n120sm4-etched.step` / `ci60n120sm4-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ci60n120sm4.step` / `ci60n120sm4.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Tokmas datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8590229836439449600) (5 pp, sha256 `8dba74ac9f9a6fd2`, retrieved 2026-09-21, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.2`, primary `claude-haiku-4-5-20251001` (text), consensus `claude-sonnet-4-6` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ci60n120sm4-datasheet.pdf)