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Contents

README

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CI60N120SM4

Tokmas · Silicon Carbide Field Effect Transistor (MOSFET) · TO-247-4L

CI60N120SM4 from Tokmas, in a TO-247-4L. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 D bidirectional Drain terminal; maximum drain-source voltage of 1200 V, continuous drain current of 60 A at VGS = 20 V and TC = 25°C, with body diode capable of 20 A continuous forward current.
2 S power_in Source terminal; main current return and reference point for gate-source voltage measurements and control.
3 KS passive Kelvin source terminal; isolated source connection for accurate gate-source voltage measurement and feedback without main current flow.
4 G input Gate terminal; control input with recommended operational voltage range of -5 V to +20 V, absolute maximum -10 V to +25 V, and gate threshold voltage of 2.0 to 4.0 V.

Key specifications

Parameter Value
Manufacturer Tokmas
Package TO-247-4L
Category Silicon Carbide (SiC) Devices
Pins 4

CAD (KiCad official)

  • Symbol: CI60N120SM4
  • Footprint: Package_TO_SOT_THT:TO-247-4_Vertical
  • 3D model: TO-247-4L (KiCad packages3D, STEP)
  • 3D model files: ci60n120sm4-etched.step / ci60n120sm4-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ci60n120sm4.step / ci60n120sm4.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Tokmas datasheet (5 pp, sha256 8dba74ac9f9a6fd2, retrieved 2026-09-21, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.2, primary claude-haiku-4-5-20251001 (text), consensus claude-sonnet-4-6 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF