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ASB65R300E

Public Made by Adom

by adom

ANHI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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ASB65R300E

ANHI · MOSFETs · TO-263

ASB65R300E from ANHI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; controls switching, with static VGS limited to ±20 V (±30 V dynamic AC) and threshold of 2.8 to 4.2 V.
2 D passive Drain, also connected to the tab; drain-source breakdown voltage is 655 V min and continuous drain current is 15 A at TC=25°C.
3 S passive Source terminal of the N-channel MOSFET.

Key specifications

Parameter Value
Manufacturer ANHI
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 15 A TC=25°C 2
Pulsed drain current ID,pulse 45 A TC=25°C 2
Avalanche energy, single pulse EAS 500 mJ Tc=25℃,VDD=50V,L=10mH, RG=25Ω 2
MOSFET dv/dt ruggedness dv/dt 124 V/ns VDS=0...400V 2
Gate source voltage (static) VGS -20 20 V static; 2
Gate source voltage (dynamic) VGS -30 30 V AC (f>1 Hz) 2
Power dissipation (TO252/263) Ptot 118 W TC=25°C 2
Storage temperature Tstg -55 150 °C 2
Operating junction temperature Tj -55 150 °C 2
Soldering temperature TL 260 °C Distance of 1.6mm from case for 10s 2
Reverse diode dv/dt dv/dt 15 V/ns VDS=0...400V, ISD<=IS, Tj=25°C 2
Thermal resistance, junction - case (TO252/263) RthJC 1.06 °C/W 3
Thermal resistance, junction - ambient (TO252/263) RthJA 62 °C/W device on PCB, minimal footprint 3
Drain-source breakdown voltage V(BR)DSS 655 V VGS=0V, ID=250uA 4
Gate threshold voltage V(GS)th 2.8 4.2 V VDS=VGS, ID=250uA 4
Zero gate voltage drain current IDSS 1 uA VDS=650V, VGS=0V, Tj=25°C 4
Gate-source leakage current IGSS 100 nA VGS=20V, VDS=0V 4
Drain-source on-state resistance RDS(on) 0.278 0.3 Ω VGS=10V, ID=7.5A, Tj=25°C 4

CAD (KiCad official)

  • Symbol: ASB65R300E
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: asb65r300e-etched.step / asb65r300e-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); asb65r300e.step / asb65r300e.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ANHI datasheet (12 pp, sha256 06df79067d0c79b5, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF