main
Ray Set visibility: public 829b2fd 7d ago
{
  "schema_version": 1,
  "type": "component",
  "slug": "asb65r300e",
  "title": "ASB65R300E",
  "brief": "ANHI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
    "component",
    "transistors-thyristors",
    "asb65r300e",
    "factory-2.0.0",
    "extractor-text"
  ],
  "component": {
    "mpn": "ASB65R300E",
    "manufacturer": "ANHI",
    "package": "TO-263",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603145384844156928",
    "parts": {
      "symbol": "asb65r300e.kicad_sym",
      "footprint": "asb65r300e.kicad_mod",
      "model_3d": "asb65r300e-hero.glb",
      "model_3d_plain": "asb65r300e-etched.glb",
      "model_3d_step": "asb65r300e-etched.step",
      "model_3d_step_plain": "asb65r300e.step",
      "lbr": "asb65r300e.lbr"
    },
    "distributor_links": {
      "lcsc": "C5440008"
    },
    "distributor_check": {
      "checked_at": "2026-10-18T15:50:10Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "quota"
      },
      "mouser": {
        "pn": null,
        "status": "quota"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate; controls switching, with static VGS limited to ±20 V (±30 V dynamic AC) and threshold of 2.8 to 4.2 V."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain, also connected to the tab; drain-source breakdown voltage is 655 V min and continuous drain current is 15 A at TC=25°C."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET."
      }
    ],
    "provenance": {
      "extractor": "extract_pins 0.3",
      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "text+vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "extractor flagged: Pin assignment (1=Gate, 2=Drain/Tab, 3=Source) comes from the internal circuit diagram on page 1; th",
          "dropped thermal pad ['EP'] absent from footprint",
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 12,
        "cost_usd": 0.2208,
        "at": "2026-10-18T15:49:54"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603145384844156928",
        "pages": 12,
        "sha256": "06df79067d0c79b5",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
    "models_3d": [
      {
        "file": "asb65r300e.step",
        "role": "plain",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          15,
          10,
          4.42
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "804a3f76e4182a02567b2429bdc9a585b857158fb8543fccd29c8eb6780e1310",
        "checked": "2026-10-18",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      },
      {
        "file": "asb65r300e-etched.step",
        "role": "eda",
        "up": "Z",
        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
        "extents_mm": [
          15,
          10,
          4.42
        ],
        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
        "sha256": "56293424872687f0a197a5c8d9d3e83dc6e6f95fc380606a4ea92f01b80340d0",
        "checked": "2026-10-18",
        "checked_by": "factory/step_pose.py (Z-up, origin, seat, binding)"
      }
    ]
  },
  "metadata": {
    "specs": {
      "Manufacturer": "ANHI",
      "Package": "TO-263",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
      "datasheet_sha256": "06df79067d0c79b54496e86f3617e5175daa97818b2e972b7a40a26c40afbe04",
      "rows": [
        {
          "name": "Continuous drain current",
          "symbol": "ID",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "TC=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Pulsed drain current",
          "symbol": "ID,pulse",
          "kind": "absolute_maximum",
          "unit": "A",
          "min": null,
          "typ": null,
          "max": 45,
          "conditions": "TC=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Avalanche energy, single pulse",
          "symbol": "EAS",
          "kind": "absolute_maximum",
          "unit": "mJ",
          "min": null,
          "typ": null,
          "max": 500,
          "conditions": "Tc=25℃,VDD=50V,L=10mH, RG=25Ω",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "MOSFET dv/dt ruggedness",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 124,
          "conditions": "VDS=0...400V",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate source voltage (static)",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -20,
          "typ": null,
          "max": 20,
          "conditions": "static;",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Gate source voltage (dynamic)",
          "symbol": "VGS",
          "kind": "absolute_maximum",
          "unit": "V",
          "min": -30,
          "typ": null,
          "max": 30,
          "conditions": "AC (f>1 Hz)",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Power dissipation (TO252/263)",
          "symbol": "Ptot",
          "kind": "absolute_maximum",
          "unit": "W",
          "min": null,
          "typ": null,
          "max": 118,
          "conditions": "TC=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Storage temperature",
          "symbol": "Tstg",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Operating junction temperature",
          "symbol": "Tj",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": -55,
          "typ": null,
          "max": 150,
          "conditions": "",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Soldering temperature",
          "symbol": "TL",
          "kind": "absolute_maximum",
          "unit": "°C",
          "min": null,
          "typ": null,
          "max": 260,
          "conditions": "Distance of 1.6mm from case for 10s",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Reverse diode dv/dt",
          "symbol": "dv/dt",
          "kind": "absolute_maximum",
          "unit": "V/ns",
          "min": null,
          "typ": null,
          "max": 15,
          "conditions": "VDS=0...400V, ISD<=IS, Tj=25°C",
          "source_page": 2,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - case (TO252/263)",
          "symbol": "RthJC",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 1.06,
          "conditions": "",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance, junction - ambient (TO252/263)",
          "symbol": "RthJA",
          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": null,
          "max": 62,
          "conditions": "device on PCB, minimal footprint",
          "source_page": 3,
          "source": "datasheet"
        },
        {
          "name": "Drain-source breakdown voltage",
          "symbol": "V(BR)DSS",
          "kind": "electrical",
          "unit": "V",
          "min": 655,
          "typ": null,
          "max": null,
          "conditions": "VGS=0V, ID=250uA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate threshold voltage",
          "symbol": "V(GS)th",
          "kind": "electrical",
          "unit": "V",
          "min": 2.8,
          "typ": null,
          "max": 4.2,
          "conditions": "VDS=VGS, ID=250uA",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Zero gate voltage drain current",
          "symbol": "IDSS",
          "kind": "electrical",
          "unit": "uA",
          "min": null,
          "typ": null,
          "max": 1,
          "conditions": "VDS=650V, VGS=0V, Tj=25°C",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Gate-source leakage current",
          "symbol": "IGSS",
          "kind": "electrical",
          "unit": "nA",
          "min": null,
          "typ": null,
          "max": 100,
          "conditions": "VGS=20V, VDS=0V",
          "source_page": 4,
          "source": "datasheet"
        },
        {
          "name": "Drain-source on-state resistance",
          "symbol": "RDS(on)",
          "kind": "electrical",
          "unit": "Ω",
          "min": null,
          "typ": 0.278,
          "max": 0.3,
          "conditions": "VGS=10V, ID=7.5A, Tj=25°C",
          "source_page": 4,
          "source": "datasheet"
        }
      ]
    }
  },
  "variants": [],
  "sections": [
    "hero",
    "viewers",
    "readme",
    "breadcrumbs",
    "info"
  ],
  "discovery_triggers": [
    "asb65r300e"
  ],
  "discovery_pitch": "ASB65R300E (ANHI) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
  },
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
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    "asb65r300e.kicad_mod",
    "asb65r300e.glb",
    "asb65r300e.step",
    "asb65r300e.lbr",
    "docs/hero.png",
    "docs/asb65r300e-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "asb65r300e-hero.glb",
    "asb65r300e-hero.overlay.json",
    "asb65r300e-etched.glb"
  ],
  "visibility": {
    "public": true
  }
}