component
ASB65R300E
Public Made by Adomby adom
ANHI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownASB65R300E
ANHI · MOSFETs · TO-263
ASB65R300E from ANHI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls switching, with static VGS limited to ±20 V (±30 V dynamic AC) and threshold of 2.8 to 4.2 V. |
| 2 | D | passive | Drain, also connected to the tab; drain-source breakdown voltage is 655 V min and continuous drain current is 15 A at TC=25°C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 15 | A | TC=25°C | 2 | ||
| Pulsed drain current | ID,pulse | 45 | A | TC=25°C | 2 | ||
| Avalanche energy, single pulse | EAS | 500 | mJ | Tc=25℃,VDD=50V,L=10mH, RG=25Ω | 2 | ||
| MOSFET dv/dt ruggedness | dv/dt | 124 | V/ns | VDS=0...400V | 2 | ||
| Gate source voltage (static) | VGS | -20 | 20 | V | static; | 2 | |
| Gate source voltage (dynamic) | VGS | -30 | 30 | V | AC (f>1 Hz) | 2 | |
| Power dissipation (TO252/263) | Ptot | 118 | W | TC=25°C | 2 | ||
| Storage temperature | Tstg | -55 | 150 | °C | 2 | ||
| Operating junction temperature | Tj | -55 | 150 | °C | 2 | ||
| Soldering temperature | TL | 260 | °C | Distance of 1.6mm from case for 10s | 2 | ||
| Reverse diode dv/dt | dv/dt | 15 | V/ns | VDS=0...400V, ISD<=IS, Tj=25°C | 2 | ||
| Thermal resistance, junction - case (TO252/263) | RthJC | 1.06 | °C/W | 3 | |||
| Thermal resistance, junction - ambient (TO252/263) | RthJA | 62 | °C/W | device on PCB, minimal footprint | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 655 | V | VGS=0V, ID=250uA | 4 | ||
| Gate threshold voltage | V(GS)th | 2.8 | 4.2 | V | VDS=VGS, ID=250uA | 4 | |
| Zero gate voltage drain current | IDSS | 1 | uA | VDS=650V, VGS=0V, Tj=25°C | 4 | ||
| Gate-source leakage current | IGSS | 100 | nA | VGS=20V, VDS=0V | 4 | ||
| Drain-source on-state resistance | RDS(on) | 0.278 | 0.3 | Ω | VGS=10V, ID=7.5A, Tj=25°C | 4 |
CAD (KiCad official)
- Symbol:
ASB65R300E - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
asb65r300e-etched.step/asb65r300e-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);asb65r300e.step/asb65r300e.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: ANHI datasheet (12 pp, sha256
06df79067d0c79b5, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).