# ASB65R300E

**ANHI** · MOSFETs · TO-263

ASB65R300E from ANHI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; controls switching, with static VGS limited to ±20 V (±30 V dynamic AC) and threshold of 2.8 to 4.2 V. |
| 2 | D | passive | Drain, also connected to the tab; drain-source breakdown voltage is 655 V min and continuous drain current is 15 A at TC=25°C. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | ANHI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID |  |  | 15 | A | TC=25°C | 2 |
| Pulsed drain current | ID,pulse |  |  | 45 | A | TC=25°C | 2 |
| Avalanche energy, single pulse | EAS |  |  | 500 | mJ | Tc=25℃,VDD=50V,L=10mH, RG=25Ω | 2 |
| MOSFET dv/dt ruggedness | dv/dt |  |  | 124 | V/ns | VDS=0...400V | 2 |
| Gate source voltage (static) | VGS | -20 |  | 20 | V | static; | 2 |
| Gate source voltage (dynamic) | VGS | -30 |  | 30 | V | AC (f>1 Hz) | 2 |
| Power dissipation (TO252/263) | Ptot |  |  | 118 | W | TC=25°C | 2 |
| Storage temperature | Tstg | -55 |  | 150 | °C |  | 2 |
| Operating junction temperature | Tj | -55 |  | 150 | °C |  | 2 |
| Soldering temperature | TL |  |  | 260 | °C | Distance of 1.6mm from case for 10s | 2 |
| Reverse diode dv/dt | dv/dt |  |  | 15 | V/ns | VDS=0...400V, ISD<=IS, Tj=25°C | 2 |
| Thermal resistance, junction - case (TO252/263) | RthJC |  |  | 1.06 | °C/W |  | 3 |
| Thermal resistance, junction - ambient (TO252/263) | RthJA |  |  | 62 | °C/W | device on PCB, minimal footprint | 3 |
| Drain-source breakdown voltage | V(BR)DSS | 655 |  |  | V | VGS=0V, ID=250uA | 4 |
| Gate threshold voltage | V(GS)th | 2.8 |  | 4.2 | V | VDS=VGS, ID=250uA | 4 |
| Zero gate voltage drain current | IDSS |  |  | 1 | uA | VDS=650V, VGS=0V, Tj=25°C | 4 |
| Gate-source leakage current | IGSS |  |  | 100 | nA | VGS=20V, VDS=0V | 4 |
| Drain-source on-state resistance | RDS(on) |  | 0.278 | 0.3 | Ω | VGS=10V, ID=7.5A, Tj=25°C | 4 |

## CAD (KiCad official)

- Symbol: `ASB65R300E`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `asb65r300e-etched.step` / `asb65r300e-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `asb65r300e.step` / `asb65r300e.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [ANHI datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8603145384844156928) (12 pp, sha256 `06df79067d0c79b5`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/asb65r300e-datasheet.pdf)