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2N5401S-HXY

Public Made by Adom

by adom

HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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2N5401S-HXY

HXY MOSFET · Bipolar (BJT) · SOT-23

2N5401S-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 BASE input Base terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is specified at IE = -10 µA with a limit of -5 V (VEBO maximum rating -5 V).
2 EMITTER passive Emitter terminal of the PNP transistor; the emitter-base voltage rating is VEBO = -5 V and the emitter cut-off current IEBO is tested at VEB = -4 V.
3 COLLECTOR passive Collector terminal of the PNP transistor; rated at VCBO = -160 V, VCEO = -150 V and collector current IC = -600 mA maximum, with collector power dissipation PC = 300 mW.

Key specifications

Parameter Value
Manufacturer HXY MOSFET
Package SOT-23
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-base breakdown voltage V(BR)CBO -160 V IC=-100µA, IE= 1
Collector-emitter breakdown voltage V(BR)CEO -150 V IC=-1mA, IB=0 1
Emitter-base breakdown voltage V(BR)EBO -5 V IE=-10µA, IC= 1
Collector cut-off current ICBO -0.1 µA VCB=-120V, IE 0 1
Emitter cut-off current IEBO -0.1 µA VEB=-4V, IC= 1
DC current gain hFE(1) 80 VCE=-5V, IC=-1mA 1
DC current gain hFE(2) 200 VCE=-5V, IC=-10mA 1
DC current gain hFE(3) 50 VCE=-5V, IC=-50mA 1
Collector-emitter saturation voltage VCE(sat)1 -0.2 V IC=-10mA, IB -1mA 1
Collector-emitter saturation voltage VCE(sat)2 -0.5 V IC=-50mA, IB=-5mA 1
Base-emitter saturation voltage VBE(sat)1 -1 V IC=-10mA, IB= -1mA 1
Transition frequency fT 100 MHz VCE=-5V, IC=-10mA, f=30MHz 1
Collector-base voltage VCBO -160 V 1
Collector-emitter voltage VCEO -150 V 1
Emitter-base voltage VEBO -5 V 1
Collector current IC -600 mA 1
Collector power dissipation PC 300 mW 1
Thermal resistance from junction to ambient RΘJA 416 ℃/W 1
Junction temperature Tj 150 ℃ 1
Storage temperature Tstg -55 150 ℃ 1

CAD (KiCad official)

  • Symbol: 2N5401S-HXY
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: 2n5401s-hxy-etched.step / 2n5401s-hxy-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); 2n5401s-hxy.step / 2n5401s-hxy.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: HXY MOSFET datasheet (5 pp, sha256 c77275155f57a8ee, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF