component
2N5401S-HXY
Public Made by Adomby adom
HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdown2N5401S-HXY
HXY MOSFET · Bipolar (BJT) · SOT-23
2N5401S-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is specified at IE = -10 µA with a limit of -5 V (VEBO maximum rating -5 V). |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage rating is VEBO = -5 V and the emitter cut-off current IEBO is tested at VEB = -4 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated at VCBO = -160 V, VCEO = -150 V and collector current IC = -600 mA maximum, with collector power dissipation PC = 300 mW. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -160 | V | IC=-100µA, IE= | 1 | ||
| Collector-emitter breakdown voltage | V(BR)CEO | -150 | V | IC=-1mA, IB=0 | 1 | ||
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V | IE=-10µA, IC= | 1 | ||
| Collector cut-off current | ICBO | -0.1 | µA | VCB=-120V, IE 0 | 1 | ||
| Emitter cut-off current | IEBO | -0.1 | µA | VEB=-4V, IC= | 1 | ||
| DC current gain | hFE(1) | 80 | VCE=-5V, IC=-1mA | 1 | |||
| DC current gain | hFE(2) | 200 | VCE=-5V, IC=-10mA | 1 | |||
| DC current gain | hFE(3) | 50 | VCE=-5V, IC=-50mA | 1 | |||
| Collector-emitter saturation voltage | VCE(sat)1 | -0.2 | V | IC=-10mA, IB -1mA | 1 | ||
| Collector-emitter saturation voltage | VCE(sat)2 | -0.5 | V | IC=-50mA, IB=-5mA | 1 | ||
| Base-emitter saturation voltage | VBE(sat)1 | -1 | V | IC=-10mA, IB= -1mA | 1 | ||
| Transition frequency | fT | 100 | MHz | VCE=-5V, IC=-10mA, f=30MHz | 1 | ||
| Collector-base voltage | VCBO | -160 | V | 1 | |||
| Collector-emitter voltage | VCEO | -150 | V | 1 | |||
| Emitter-base voltage | VEBO | -5 | V | 1 | |||
| Collector current | IC | -600 | mA | 1 | |||
| Collector power dissipation | PC | 300 | mW | 1 | |||
| Thermal resistance from junction to ambient | RΘJA | 416 | ℃/W | 1 | |||
| Junction temperature | Tj | 150 | ℃ | 1 | |||
| Storage temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
2N5401S-HXY - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
2n5401s-hxy-etched.step/2n5401s-hxy-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);2n5401s-hxy.step/2n5401s-hxy.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: HXY MOSFET datasheet (5 pp, sha256
c77275155f57a8ee, retrieved 2026-10-29, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).