main
Ray Set visibility: public d9ebed6 1d ago
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  "slug": "2n5401s-hxy",
  "title": "2N5401S-HXY",
  "brief": "HXY MOSFET Bipolar (BJT), SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "subcategory": "Bipolar (BJT)",
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      "source": "Component Ocean /api/assign-pns",
      "digikey": {
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      "mouser": {
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        "name": "EMITTER",
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        "description": "Emitter terminal of the PNP transistor; the emitter-base voltage rating is VEBO = -5 V and the emitter cut-off current IEBO is tested at VEB = -4 V."
      },
      {
        "number": "3",
        "name": "COLLECTOR",
        "type": "passive",
        "description": "Collector terminal of the PNP transistor; rated at VCBO = -160 V, VCEO = -150 V and collector current IC = -600 mA maximum, with collector power dissipation PC = 300 mW."
      }
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        "cost_usd": 0.0439,
        "at": "2026-10-29T01:39:54"
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        "sha256": "c77275155f57a8ee",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
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        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "footprint_binding": "identity",
        "sha256": "dd5d1711204e1d8d26cd11490923bd84340820baa69538c385a4300ec2539bc0",
        "checked": "2026-10-29",
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  "metadata": {
    "specs": {
      "Manufacturer": "HXY MOSFET",
      "Package": "SOT-23",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
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    "characteristics": {
      "version": 1,
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          "name": "Collector-base breakdown voltage",
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          "typ": null,
          "max": null,
          "conditions": "IC=-100µA, IE=",
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          "max": null,
          "conditions": "IE=-10µA, IC=",
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        {
          "name": "Collector cut-off current",
          "symbol": "ICBO",
          "kind": "electrical",
          "unit": "µA",
          "min": null,
          "typ": null,
          "max": -0.1,
          "conditions": "VCB=-120V, IE 0",
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        {
          "name": "Emitter cut-off current",
          "symbol": "IEBO",
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          "unit": "µA",
          "min": null,
          "typ": null,
          "max": -0.1,
          "conditions": "VEB=-4V, IC=",
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        {
          "name": "DC current gain",
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          "unit": "",
          "min": 80,
          "typ": null,
          "max": null,
          "conditions": "VCE=-5V, IC=-1mA",
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        {
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          "name": "Collector-emitter saturation voltage",
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          "max": -0.5,
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        {
          "name": "Base-emitter saturation voltage",
          "symbol": "VBE(sat)1",
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          "min": null,
          "typ": null,
          "max": -1,
          "conditions": "IC=-10mA, IB= -1mA",
          "source_page": 1,
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        },
        {
          "name": "Transition frequency",
          "symbol": "fT",
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          "conditions": "VCE=-5V, IC=-10mA, f=30MHz",
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        },
        {
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          "min": null,
          "typ": null,
          "max": -5,
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          "name": "Collector current",
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          "unit": "mA",
          "min": null,
          "typ": null,
          "max": -600,
          "conditions": "",
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        {
          "name": "Collector power dissipation",
          "symbol": "PC",
          "kind": "absolute_maximum",
          "unit": "mW",
          "min": null,
          "typ": null,
          "max": 300,
          "conditions": "",
          "source_page": 1,
          "source": "datasheet"
        },
        {
          "name": "Thermal resistance from junction to ambient",
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          "kind": "thermal",
          "unit": "℃/W",
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          "typ": null,
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        {
          "name": "Junction temperature",
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        {
          "name": "Storage temperature",
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          "unit": "℃",
          "min": -55,
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  "discovery_pitch": "2N5401S-HXY (HXY MOSFET) component page: datasheet pinout, KiCad symbol, footprint and 3D.",
  "author": {
    "name": "Ray",
    "email": "[email protected]"
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