# 2N5401S-HXY

**HXY MOSFET** · Bipolar (BJT) · SOT-23

2N5401S-HXY from HXY MOSFET, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | BASE | input | Base terminal of the PNP transistor; the emitter-base breakdown voltage V(BR)EBO is specified at IE = -10 µA with a limit of -5 V (VEBO maximum rating -5 V). |
| 2 | EMITTER | passive | Emitter terminal of the PNP transistor; the emitter-base voltage rating is VEBO = -5 V and the emitter cut-off current IEBO is tested at VEB = -4 V. |
| 3 | COLLECTOR | passive | Collector terminal of the PNP transistor; rated at VCBO = -160 V, VCEO = -150 V and collector current IC = -600 mA maximum, with collector power dissipation PC = 300 mW. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | HXY MOSFET |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Collector-base breakdown voltage | V(BR)CBO | -160 |  |  | V | IC=-100µA, IE= | 1 |
| Collector-emitter breakdown voltage | V(BR)CEO | -150 |  |  | V | IC=-1mA, IB=0 | 1 |
| Emitter-base breakdown voltage | V(BR)EBO | -5 |  |  | V | IE=-10µA, IC= | 1 |
| Collector cut-off current | ICBO |  |  | -0.1 | µA | VCB=-120V, IE 0 | 1 |
| Emitter cut-off current | IEBO |  |  | -0.1 | µA | VEB=-4V, IC= | 1 |
| DC current gain | hFE(1) | 80 |  |  |  | VCE=-5V, IC=-1mA | 1 |
| DC current gain | hFE(2) | 200 |  |  |  | VCE=-5V, IC=-10mA | 1 |
| DC current gain | hFE(3) | 50 |  |  |  | VCE=-5V, IC=-50mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)1 |  |  | -0.2 | V | IC=-10mA, IB -1mA | 1 |
| Collector-emitter saturation voltage | VCE(sat)2 |  |  | -0.5 | V | IC=-50mA, IB=-5mA | 1 |
| Base-emitter saturation voltage | VBE(sat)1 |  |  | -1 | V | IC=-10mA, IB= -1mA | 1 |
| Transition frequency | fT | 100 |  |  | MHz | VCE=-5V, IC=-10mA, f=30MHz | 1 |
| Collector-base voltage | VCBO |  |  | -160 | V |  | 1 |
| Collector-emitter voltage | VCEO |  |  | -150 | V |  | 1 |
| Emitter-base voltage | VEBO |  |  | -5 | V |  | 1 |
| Collector current | IC |  |  | -600 | mA |  | 1 |
| Collector power dissipation | PC |  |  | 300 | mW |  | 1 |
| Thermal resistance from junction to ambient | RΘJA |  |  | 416 | ℃/W |  | 1 |
| Junction temperature | Tj |  |  | 150 | ℃ |  | 1 |
| Storage temperature | Tstg | -55 |  | 150 | ℃ |  | 1 |

## CAD (KiCad official)

- Symbol: `2N5401S-HXY`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `2n5401s-hxy-etched.step` / `2n5401s-hxy-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `2n5401s-hxy.step` / `2n5401s-hxy.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [HXY MOSFET datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8604446775096713216) (5 pp, sha256 `c77275155f57a8ee`, retrieved 2026-10-29, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/2n5401s-hxy-datasheet.pdf)