component
IPA083N10N5
Public Made by Adomby adom
Infineon Technologies MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
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PCB Footprint
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Datasheet
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Contents
README
markdownIPA083N10N5
Infineon Technologies · MOSFETs · TO-220
IPA083N10N5 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate. Isolated MOS gate controlling channel conduction. VGS rated ±20 V; typical VGS(th)=3.0 V (2.2 V min / 3.8 V max at ID=49 µA); typical RG=1.2 Ω; total gate charge Qg≈30 nC (0-10 V). |
| 2 | D | passive | Drain. Power terminal; V(BR)DSS ≥ 100 V, ID=44 A at TC=25 °C (32 A at TC=100 °C), pulsed ID=176 A. RDS(on) typ 7.2 mΩ / max 8.3 mΩ at VGS=10 V, ID=44 A. Also serves as thermal path to the (isolated) heat-slug tab of the TO-220-FP. |
| 3 | S | passive | Source. Power terminal and reference for VGS/VDS. Intrinsic body diode from Source to Drain (VSD typ 0.9 V, max 1.2 V at IF=44 A, Tj=25 °C; IS=30 A continuous, trr typ 55 ns). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Infineon Technologies |
| Package | TO-220 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Ordering variants
Same part, different packaging or reel option.
IPA083N10N5
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Continuous drain current | ID | 44 | A | TC=25°C | 3 | ||
| Continuous drain current | ID | 32 | A | TC=100°C | 3 | ||
| Pulsed drain current | ID,pulse | 176 | A | TC=25°C | 3 | ||
| Avalanche energy, single pulse | EAS | 83 | mJ | ID=44A,RGS=25Ω | 3 | ||
| Gate source voltage | VGS | -20 | 20 | V | 3 | ||
| Power dissipation | Ptot | 36 | W | TC=25°C | 3 | ||
| Operating and storage temperature | Tj,Tstg | -55 | 175 | °C | IEC climatic category; DIN IEC 68-1: 55/175/56 | 3 | |
| Thermal resistance, junction - case | RthJC | 3.1 | 4.1 | K/W | 3 | ||
| Drain-source breakdown voltage | V(BR)DSS | 100 | V | VGS=0V,ID=1mA | 3 | ||
| Gate threshold voltage | VGS(th) | 2.2 | 3 | 3.8 | V | VDS=VGS,ID=49µA | 3 |
| Zero gate voltage drain current | IDSS | 0.1 | 1 | µA | VDS=100V,VGS=0V,Tj=25°C | 3 | |
| Zero gate voltage drain current | IDSS | 10 | 100 | µA | VDS=100V,VGS=0V,Tj=125°C | 3 | |
| Gate-source leakage current | IGSS | 1 | 100 | nA | VGS=20V,VDS=0V | 3 | |
| Drain-source on-state resistance | RDS(on) | 7.2 | 8.3 | mΩ | VGS=10V,ID=44A | 3 | |
| Drain-source on-state resistance | RDS(on) | 8.8 | 11 | mΩ | VGS=6V,ID=22A | 3 | |
| Gate resistance | RG | 1.2 | 1.8 | Ω | 3 | ||
| Transconductance | gfs | 38 | 76 | S | /VDS/>2/ID/RDS(on)max,ID=44A | 3 | |
| Input capacitance | Ciss | 2100 | 2730 | pF | VGS=0V,VDS=50V,f=1MHz | 4 | |
| Output capacitance | Coss | 337 | 438 | pF | VGS=0V,VDS=50V,f=1MHz | 4 | |
| Reverse transfer capacitance | Crss | 16 | 28 | pF | VGS=0V,VDS=50V,f=1MHz | 4 | |
| Gate to drain charge | Qgd | 6 | 10 | nC | VDD=50V,ID=44A,VGS=0to10V | 4 | |
| Gate charge total | Qg | 30 | 37 | nC | VDD=50V,ID=44A,VGS=0to10V | 4 | |
| Output charge | Qoss | 40 | 53 | nC | VDD=50V,VGS=0V | 4 | |
| Diode continuous forward current | IS | 30 | A | TC=25°C | 4 | ||
| Diode pulse current | IS,pulse | 176 | A | TC=25°C | 4 | ||
| Diode forward voltage | VSD | 0.9 | 1.2 | V | VGS=0V,IF=44A,Tj=25°C | 4 | |
| Reverse recovery time | trr | 55 | 110 | ns | VR=50V,IF=IS,diF/dt=100A/µs | 4 | |
| Reverse recovery charge | Qrr | 95 | 190 | nC | VR=50V,IF=IS,diF/dt=100A/µs | 4 |
CAD (KiCad official)
- Symbol:
IPA083N10N5 - Footprint:
Package_TO_SOT_THT:TO-220-3_Vertical - 3D model: TO-220 (KiCad packages3D, STEP)
- 3D model files:
ipa083n10n5-etched.step/ipa083n10n5-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ipa083n10n5.step/ipa083n10n5.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Infineon Technologies datasheet (10 pp, sha256
a27bdf0c5d14f3a0, retrieved 2026-08-17, tier: lcsc) - Extractor:
ds2sf(Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate. - CAD: KiCad official libraries (CC-BY-SA 4.0).