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IPA083N10N5

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Infineon Technologies MOSFETs, TO-220. Pinout extracted from the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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docs ipa083n10n5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
viewers ipa083n10n5: viewers · Ray 1mo ago
ipa083n10n5-etched.fit.json ipa083n10n5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ipa083n10n5-etched.glb ipa083n10n5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ipa083n10n5-etched.step ipa083n10n5: re-etch, flat white mark read from pin 1 (service-occt 1.4.0) + chip hero · Ray 1mo ago
ipa083n10n5.glb Publish 0.1.0 · Ray 1mo ago
ipa083n10n5.kicad_mod Publish 0.1.0 · Ray 1mo ago
ipa083n10n5.kicad_sym Publish 0.1.0 · Ray 1mo ago
ipa083n10n5.lbr Publish 0.1.0 · Ray 1mo ago
ipa083n10n5.step Publish 0.1.0 · Ray 1mo ago
package.json Publish 0.1.0 · Ray 1mo ago
page.json ipa083n10n5: specified limits as data (metadata.characteristics, 28 rows from the datasheet) · Ray 25d ago
README.md ipa083n10n5: specified limits as data (metadata.characteristics, 28 rows from the datasheet) · Ray 25d ago

IPA083N10N5

Infineon Technologies · MOSFETs · TO-220

IPA083N10N5 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Isolated MOS gate controlling channel conduction. VGS rated ±20 V; typical VGS(th)=3.0 V (2.2 V min / 3.8 V max at ID=49 µA); typical RG=1.2 Ω; total gate charge Qg≈30 nC (0-10 V).
2 D passive Drain. Power terminal; V(BR)DSS ≥ 100 V, ID=44 A at TC=25 °C (32 A at TC=100 °C), pulsed ID=176 A. RDS(on) typ 7.2 mΩ / max 8.3 mΩ at VGS=10 V, ID=44 A. Also serves as thermal path to the (isolated) heat-slug tab of the TO-220-FP.
3 S passive Source. Power terminal and reference for VGS/VDS. Intrinsic body diode from Source to Drain (VSD typ 0.9 V, max 1.2 V at IF=44 A, Tj=25 °C; IS=30 A continuous, trr typ 55 ns).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • IPA083N10N5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Continuous drain current ID 44 A TC=25°C 3
Continuous drain current ID 32 A TC=100°C 3
Pulsed drain current ID,pulse 176 A TC=25°C 3
Avalanche energy, single pulse EAS 83 mJ ID=44A,RGS=25Ω 3
Gate source voltage VGS -20 20 V 3
Power dissipation Ptot 36 W TC=25°C 3
Operating and storage temperature Tj,Tstg -55 175 °C IEC climatic category; DIN IEC 68-1: 55/175/56 3
Thermal resistance, junction - case RthJC 3.1 4.1 K/W 3
Drain-source breakdown voltage V(BR)DSS 100 V VGS=0V,ID=1mA 3
Gate threshold voltage VGS(th) 2.2 3 3.8 V VDS=VGS,ID=49µA 3
Zero gate voltage drain current IDSS 0.1 1 µA VDS=100V,VGS=0V,Tj=25°C 3
Zero gate voltage drain current IDSS 10 100 µA VDS=100V,VGS=0V,Tj=125°C 3
Gate-source leakage current IGSS 1 100 nA VGS=20V,VDS=0V 3
Drain-source on-state resistance RDS(on) 7.2 8.3 mΩ VGS=10V,ID=44A 3
Drain-source on-state resistance RDS(on) 8.8 11 mΩ VGS=6V,ID=22A 3
Gate resistance RG 1.2 1.8 Ω 3
Transconductance gfs 38 76 S /VDS/>2/ID/RDS(on)max,ID=44A 3
Input capacitance Ciss 2100 2730 pF VGS=0V,VDS=50V,f=1MHz 4
Output capacitance Coss 337 438 pF VGS=0V,VDS=50V,f=1MHz 4
Reverse transfer capacitance Crss 16 28 pF VGS=0V,VDS=50V,f=1MHz 4
Gate to drain charge Qgd 6 10 nC VDD=50V,ID=44A,VGS=0to10V 4
Gate charge total Qg 30 37 nC VDD=50V,ID=44A,VGS=0to10V 4
Output charge Qoss 40 53 nC VDD=50V,VGS=0V 4
Diode continuous forward current IS 30 A TC=25°C 4
Diode pulse current IS,pulse 176 A TC=25°C 4
Diode forward voltage VSD 0.9 1.2 V VGS=0V,IF=44A,Tj=25°C 4
Reverse recovery time trr 55 110 ns VR=50V,IF=IS,diF/dt=100A/µs 4
Reverse recovery charge Qrr 95 190 nC VR=50V,IF=IS,diF/dt=100A/µs 4

CAD (KiCad official)

  • Symbol: IPA083N10N5
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ipa083n10n5-etched.step / ipa083n10n5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipa083n10n5.step / ipa083n10n5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 a27bdf0c5d14f3a0, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF