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Contents

README

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IPA083N10N5

Infineon Technologies · MOSFETs · TO-220

IPA083N10N5 from Infineon Technologies, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet by ds2sf; symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate. Isolated MOS gate controlling channel conduction. VGS rated ±20 V; typical VGS(th)=3.0 V (2.2 V min / 3.8 V max at ID=49 µA); typical RG=1.2 Ω; total gate charge Qg≈30 nC (0-10 V).
2 D passive Drain. Power terminal; V(BR)DSS ≥ 100 V, ID=44 A at TC=25 °C (32 A at TC=100 °C), pulsed ID=176 A. RDS(on) typ 7.2 mΩ / max 8.3 mΩ at VGS=10 V, ID=44 A. Also serves as thermal path to the (isolated) heat-slug tab of the TO-220-FP.
3 S passive Source. Power terminal and reference for VGS/VDS. Intrinsic body diode from Source to Drain (VSD typ 0.9 V, max 1.2 V at IF=44 A, Tj=25 °C; IS=30 A continuous, trr typ 55 ns).

Key specifications

Parameter Value
Manufacturer Infineon Technologies
Package TO-220
Category Transistors/Thyristors
Pins 3

Ordering variants

Same part, different packaging or reel option.

  • IPA083N10N5

CAD (KiCad official)

  • Symbol: IPA083N10N5
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: ipa083n10n5-etched.step / ipa083n10n5-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ipa083n10n5.step / ipa083n10n5.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Infineon Technologies datasheet (10 pp, sha256 a27bdf0c5d14f3a0, retrieved 2026-08-17, tier: lcsc)
  • Extractor: ds2sf (Claude). Every pin and dimension is cited to a datasheet page; it refuses to fabricate.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF