# YJD18GP10A

**Yangzhou Yangjie Elec Tech** · MOSFETs · TO-252

YJD18GP10A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-source voltage limit is ±20 V, with VGS(th) of -1.0 to -2.5 V at ID=-250 µA. |
| 2 | D | passive | Drain, also connected to the exposed tab; VDS is -100 V and continuous ID is -18 A at Tc=25℃. |
| 3 | S | passive | Source; maximum body-diode continuous current is -18 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Yangzhou Yangjie Elec Tech |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Body Leakage Current | IGSS | -100 |  | 100 | nA | VGS= ±20V, VDS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS= VGS, ID=-250μA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 75 | 90 | mΩ | VGS= -10V, ID=-10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) |  | 85 | 110 | mΩ | VGS= -4.5V, ID=-5A | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -100 |  |  | V | VGS= 0V, ID=-250μA | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | μA | VDS=-100V,VGS=0V, Tj=25℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -5 | μA | VDS=-100V,VGS=0V, Tj=55℃ | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | μA | VDS=-100V,VGS=0V, Tj=125℃ | 2 |
| Diode Forward Voltage | VSD |  |  | -1.3 | V | IS=-10A,VGS=0V | 2 |
| Maximum Body-Diode Continuous Current | IS |  |  | -18 | A |  | 2 |
| Drain-source Voltage | VDS |  |  | -100 | V | TA=25℃ unless otherwise noted | 1 |
| Gate-source Voltage | VGS | -20 |  | 20 | V | TA=25℃ unless otherwise noted | 1 |
| Drain Current (Tc=25℃) | ID |  |  | -18 | A | Tc=25℃ | 1 |
| Drain Current (Tc=100℃) | ID |  |  | -12 | A | Tc=100℃ | 1 |
| Pulsed Drain Current | IDM |  |  | -72 | A |  | 1 |
| Avalanche energy | EAS |  |  | 100 | mJ |  | 1 |
| Total Power Dissipation (Tc=25℃) | PD |  |  | 72 | W | Tc=25℃ | 1 |
| Total Power Dissipation (Tc=100℃) | PD |  |  | 28.8 | W | Tc=100℃ | 1 |
| Junction and Storage Temperature Range | TJ, TSTG | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-to-Ambient (t≤10s) | RθJA |  | 15 | 20 | ℃/W | t≤10S | 1 |
| Thermal Resistance Junction-to-Ambient (Steady-State) | RθJA |  | 40 | 50 | ℃/W | Steady-State | 1 |
| Thermal Resistance Junction-to-Case (Steady-State) | RθJC |  | 1.35 | 1.7 | ℃/W | Steady-State | 1 |

## CAD (KiCad official)

- Symbol: `YJD18GP10A`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `yjd18gp10a-etched.step` / `yjd18gp10a-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `yjd18gp10a.step` / `yjd18gp10a.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Yangzhou Yangjie Elec Tech datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588907459444953088) (6 pp, sha256 `9e90bbed348ca9b6`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/yjd18gp10a-datasheet.pdf)