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YJD18GP10A

Yangzhou Yangjie Elec Tech · MOSFETs · TO-252

YJD18GP10A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limit is ±20 V, with VGS(th) of -1.0 to -2.5 V at ID=-250 µA.
2 D passive Drain, also connected to the exposed tab; VDS is -100 V and continuous ID is -18 A at Tc=25℃.
3 S passive Source; maximum body-diode continuous current is -18 A.

Key specifications

Parameter Value
Manufacturer Yangzhou Yangjie Elec Tech
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Body Leakage Current IGSS -100 100 nA VGS= ±20V, VDS=0V 2
Gate Threshold Voltage VGS(th) -1 -1.8 -2.5 V VDS= VGS, ID=-250μA 2
Static Drain-Source On-Resistance RDS(ON) 75 90 mΩ VGS= -10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 85 110 mΩ VGS= -4.5V, ID=-5A 2
Drain-Source Breakdown Voltage BVDSS -100 V VGS= 0V, ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-100V,VGS=0V, Tj=25℃ 2
Zero Gate Voltage Drain Current IDSS -5 μA VDS=-100V,VGS=0V, Tj=55℃ 2
Zero Gate Voltage Drain Current IDSS -10 μA VDS=-100V,VGS=0V, Tj=125℃ 2
Diode Forward Voltage VSD -1.3 V IS=-10A,VGS=0V 2
Maximum Body-Diode Continuous Current IS -18 A 2
Drain-source Voltage VDS -100 V TA=25℃ unless otherwise noted 1
Gate-source Voltage VGS -20 20 V TA=25℃ unless otherwise noted 1
Drain Current (Tc=25℃) ID -18 A Tc=25℃ 1
Drain Current (Tc=100℃) ID -12 A Tc=100℃ 1
Pulsed Drain Current IDM -72 A 1
Avalanche energy EAS 100 mJ 1
Total Power Dissipation (Tc=25℃) PD 72 W Tc=25℃ 1
Total Power Dissipation (Tc=100℃) PD 28.8 W Tc=100℃ 1
Junction and Storage Temperature Range TJ, TSTG -55 150 ℃ 1
Thermal Resistance Junction-to-Ambient (t≤10s) RθJA 15 20 ℃/W t≤10S 1
Thermal Resistance Junction-to-Ambient (Steady-State) RθJA 40 50 ℃/W Steady-State 1
Thermal Resistance Junction-to-Case (Steady-State) RθJC 1.35 1.7 ℃/W Steady-State 1

CAD (KiCad official)

  • Symbol: YJD18GP10A
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: yjd18gp10a-etched.step / yjd18gp10a-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); yjd18gp10a.step / yjd18gp10a.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Yangzhou Yangjie Elec Tech datasheet (6 pp, sha256 9e90bbed348ca9b6, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF