component
YJD18GP10A
Public Made by Adomby adom
Yangzhou Yangjie Elec Tech MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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yjd18gp10a: specified limits as data (metadata.characteristics, 22 rows from the datasheet)
2 files changed
+301−1
README.md+29@@ -21,6 +21,35 @@ YJD18GP10A from Yangzhou Yangjie Elec Tech, in a TO-252. Pinout and pin descript | Category | Transistors/Thyristors | | Pins | 3 | +## Electrical characteristics++Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).++| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |+|---|---|---|---|---|---|---|---|+| Gate-Body Leakage Current | IGSS | -100 | | 100 | nA | VGS= ±20V, VDS=0V | 2 |+| Gate Threshold Voltage | VGS(th) | -1 | -1.8 | -2.5 | V | VDS= VGS, ID=-250μA | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 75 | 90 | mΩ | VGS= -10V, ID=-10A | 2 |+| Static Drain-Source On-Resistance | RDS(ON) | | 85 | 110 | mΩ | VGS= -4.5V, ID=-5A | 2 |+| Drain-Source Breakdown Voltage | BVDSS | -100 | | | V | VGS= 0V, ID=-250μA | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -1 | μA | VDS=-100V,VGS=0V, Tj=25℃ | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -5 | μA | VDS=-100V,VGS=0V, Tj=55℃ | 2 |+| Zero Gate Voltage Drain Current | IDSS | | | -10 | μA | VDS=-100V,VGS=0V, Tj=125℃ | 2 |+| Diode Forward Voltage | VSD | | | -1.3 | V | IS=-10A,VGS=0V | 2 |+| Maximum Body-Diode Continuous Current | IS | | | -18 | A | | 2 |+| Drain-source Voltage | VDS | | | -100 | V | TA=25℃ unless otherwise noted | 1 |+| Gate-source Voltage | VGS | -20 | | 20 | V | TA=25℃ unless otherwise noted | 1 |+| Drain Current (Tc=25℃) | ID | | | -18 | A | Tc=25℃ | 1 |+| Drain Current (Tc=100℃) | ID | | | -12 | A | Tc=100℃ | 1 |+| Pulsed Drain Current | IDM | | | -72 | A | | 1 |+| Avalanche energy | EAS | | | 100 | mJ | | 1 |+| Total Power Dissipation (Tc=25℃) | PD | | | 72 | W | Tc=25℃ | 1 |+| Total Power Dissipation (Tc=100℃) | PD | | | 28.8 | W | Tc=100℃ | 1 |+| Junction and Storage Temperature Range | TJ, TSTG | -55 | | 150 | ℃ | | 1 |+| Thermal Resistance Junction-to-Ambient (t≤10s) | RθJA | | 15 | 20 | ℃/W | t≤10S | 1 |+| Thermal Resistance Junction-to-Ambient (Steady-State) | RθJA | | 40 | 50 | ℃/W | Steady-State | 1 |+| Thermal Resistance Junction-to-Case (Steady-State) | RθJC | | 1.35 | 1.7 | ℃/W | Steady-State | 1 |+ ## CAD (KiCad official) - Symbol: `YJD18GP10A`
page.json+272−1@@ -149,6 +149,277 @@ "Package": "TO-252", "Category": "Transistors/Thyristors", "Pins": "3"+ },+ "characteristics": {+ "version": 1,+ "source": "datasheet",+ "datasheet_sha256": "9e90bbed348ca9b6",+ "rows": [+ {+ "name": "Gate-Body Leakage Current",+ "symbol": "IGSS",+ "kind": "electrical",+ "unit": "nA",+ "min": -100,+ "typ": null,+ "max": 100,+ "conditions": "VGS= ±20V, VDS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Gate Threshold Voltage",+ "symbol": "VGS(th)",+ "kind": "electrical",+ "unit": "V",+ "min": -1,+ "typ": -1.8,+ "max": -2.5,+ "conditions": "VDS= VGS, ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 75,+ "max": 90,+ "conditions": "VGS= -10V, ID=-10A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Static Drain-Source On-Resistance",+ "symbol": "RDS(ON)",+ "kind": "electrical",+ "unit": "mΩ",+ "min": null,+ "typ": 85,+ "max": 110,+ "conditions": "VGS= -4.5V, ID=-5A",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-Source Breakdown Voltage",+ "symbol": "BVDSS",+ "kind": "electrical",+ "unit": "V",+ "min": -100,+ "typ": null,+ "max": null,+ "conditions": "VGS= 0V, ID=-250μA",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -1,+ "conditions": "VDS=-100V,VGS=0V, Tj=25℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -5,+ "conditions": "VDS=-100V,VGS=0V, Tj=55℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Zero Gate Voltage Drain Current",+ "symbol": "IDSS",+ "kind": "electrical",+ "unit": "μA",+ "min": null,+ "typ": null,+ "max": -10,+ "conditions": "VDS=-100V,VGS=0V, Tj=125℃",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Diode Forward Voltage",+ "symbol": "VSD",+ "kind": "electrical",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -1.3,+ "conditions": "IS=-10A,VGS=0V",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Maximum Body-Diode Continuous Current",+ "symbol": "IS",+ "kind": "electrical",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -18,+ "conditions": "",+ "source_page": 2,+ "source": "datasheet"+ },+ {+ "name": "Drain-source Voltage",+ "symbol": "VDS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": null,+ "typ": null,+ "max": -100,+ "conditions": "TA=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Gate-source Voltage",+ "symbol": "VGS",+ "kind": "absolute_maximum",+ "unit": "V",+ "min": -20,+ "typ": null,+ "max": 20,+ "conditions": "TA=25℃ unless otherwise noted",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Tc=25℃)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -18,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Drain Current (Tc=100℃)",+ "symbol": "ID",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -12,+ "conditions": "Tc=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Pulsed Drain Current",+ "symbol": "IDM",+ "kind": "absolute_maximum",+ "unit": "A",+ "min": null,+ "typ": null,+ "max": -72,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Avalanche energy",+ "symbol": "EAS",+ "kind": "absolute_maximum",+ "unit": "mJ",+ "min": null,+ "typ": null,+ "max": 100,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation (Tc=25℃)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 72,+ "conditions": "Tc=25℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Total Power Dissipation (Tc=100℃)",+ "symbol": "PD",+ "kind": "absolute_maximum",+ "unit": "W",+ "min": null,+ "typ": null,+ "max": 28.8,+ "conditions": "Tc=100℃",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Junction and Storage Temperature Range",+ "symbol": "TJ, TSTG",+ "kind": "absolute_maximum",+ "unit": "℃",+ "min": -55,+ "typ": null,+ "max": 150,+ "conditions": "",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient (t≤10s)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 15,+ "max": 20,+ "conditions": "t≤10S",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Ambient (Steady-State)",+ "symbol": "RθJA",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 40,+ "max": 50,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ },+ {+ "name": "Thermal Resistance Junction-to-Case (Steady-State)",+ "symbol": "RθJC",+ "kind": "thermal",+ "unit": "℃/W",+ "min": null,+ "typ": 1.35,+ "max": 1.7,+ "conditions": "Steady-State",+ "source_page": 1,+ "source": "datasheet"+ }+ ] } }, "variants": [],@@ -190,4 +461,4 @@ "visibility": { "public": true }-}+}