# XRS80P06G

**XNRUSEMI** · MOSFETs · TO-263

XRS80P06G from XNRUSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20 V, with threshold of -1.3 to -2.3 V at ID=-250µA. |
| 2 | D | passive | Drain (middle lead, also the exposed tab); drain-to-source voltage -60 V, continuous current -80 A at TC=25 °C. |
| 3 | S | passive | Source; continuous diode forward current -80 A at TC=25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | -60 |  |  | V | VGS=0V, ID=-250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | µA | VDS = -60V, VGS= 0V | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS =-20V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS =+20V | 2 |
| Gate Threshold Voltage | VGS(TH) | -1.3 | -1.8 | -2.3 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON)1 |  | 9 | 11 | mΩ | VGS=-10V, ID=-20A | 2 |
| Drain-to-Source On-Resistance | RDS(ON)2 |  | 12 | 16 | mΩ | VGS=-4.5V, ID=-15A | 2 |
| Forward Transconductance | gFS | 50 |  |  | S | VDS=-5V, ID=-20A | 2 |
| Diode Forward Current | IS |  |  | -80 | A | TC=25 °C | 2 |
| Diode Pulse Current | ISM |  |  | -320 | A |  | 2 |
| Diode Forward Voltage | VSD |  |  | -1.2 | V | IS=-6.0A, VGS=0V | 2 |
| Drain-Source Voltage (absolute maximum) | VDSS | -60 |  |  | V |  | 1 |
| Continuous Drain Current | ID | -80 |  |  | A | TC = 25 °C | 1 |
| Continuous Drain Current | ID | -50 |  |  | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM | -320 |  |  | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Gate-to-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Power Dissipation | PD |  |  | 110 | W |  | 1 |
| Single pulse avalanche energy | EAS |  |  | 450 | mJ | VDD=30V, L=0.3mH, RG=25Ω, Starting Tj=25℃ | 1 |
| Operating Junction Temperature | TJ | -55 |  | 150 | ℃ | Printed as '150，-55 to 150' for TJ,Tstg | 1 |
| Storage Temperature Range | Tstg | -55 |  | 150 | ℃ | Printed as '150，-55 to 150' for TJ,Tstg | 1 |
| Maximum Temperature for Soldering | TL |  |  | 300 | ℃ |  | 1 |
| Thermal Resistance, Junction-to-Case | RθJC |  | 1.1 |  | ℃/W |  | 1 |
| Thermal Resistance, Junction-to-Ambient | RθJA |  | 60 |  | ℃/W |  | 1 |

## CAD (KiCad official)

- Symbol: `XRS80P06G`
- Footprint: `Package_TO_SOT_SMD:TO-263-2`
- 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files: `xrs80p06g-etched.step` / `xrs80p06g-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xrs80p06g.step` / `xrs80p06g.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [XNRUSEMI datasheet](docs/xrs80p06g-datasheet.pdf) (6 pp, sha256 `c012ecde65651741`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/xrs80p06g-datasheet.pdf)