main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 17d ago
viewers xrs80p06g: viewers · Ray 17d ago
package.json Publish 0.1.0 · Ray 17d ago
page.json Set visibility: public · Ray 17d ago
README.md Publish 0.1.0 · Ray 17d ago
xrs80p06g-etched.glb Publish 0.1.0 · Ray 17d ago
xrs80p06g-etched.step xrs80p06g: factory component page (tier=lcsc) · Ray 17d ago
xrs80p06g-hero.glb xrs80p06g: hero GLB from the etched model (keeps the MPN mark) · Ray 17d ago
xrs80p06g-hero.overlay.json Publish 0.1.0 · Ray 17d ago
xrs80p06g.glb Publish 0.1.0 · Ray 17d ago
xrs80p06g.kicad_mod Publish 0.1.0 · Ray 17d ago
xrs80p06g.kicad_sym Publish 0.1.0 · Ray 17d ago
xrs80p06g.lbr Publish 0.1.0 · Ray 17d ago
xrs80p06g.step Publish 0.1.0 · Ray 17d ago

XRS80P06G

XNRUSEMI · MOSFETs · TO-263

XRS80P06G from XNRUSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage limited to ±20 V, with threshold of -1.3 to -2.3 V at ID=-250µA.
2 D passive Drain (middle lead, also the exposed tab); drain-to-source voltage -60 V, continuous current -80 A at TC=25 °C.
3 S passive Source; continuous diode forward current -80 A at TC=25 °C.

Key specifications

Parameter Value
Manufacturer XNRUSEMI
Package TO-263
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain to Source Breakdown Voltage VDSS -60 V VGS=0V, ID=-250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS = -60V, VGS= 0V 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS =-20V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS =+20V 2
Gate Threshold Voltage VGS(TH) -1.3 -1.8 -2.3 V VDS=VGS, ID=-250µA 2
Drain-to-Source On-Resistance RDS(ON)1 9 11 mΩ VGS=-10V, ID=-20A 2
Drain-to-Source On-Resistance RDS(ON)2 12 16 mΩ VGS=-4.5V, ID=-15A 2
Forward Transconductance gFS 50 S VDS=-5V, ID=-20A 2
Diode Forward Current IS -80 A TC=25 °C 2
Diode Pulse Current ISM -320 A 2
Diode Forward Voltage VSD -1.2 V IS=-6.0A, VGS=0V 2
Drain-Source Voltage (absolute maximum) VDSS -60 V 1
Continuous Drain Current ID -80 A TC = 25 °C 1
Continuous Drain Current ID -50 A TC = 100 °C 1
Pulsed Drain Current IDM -320 A Repetitive rating; pulse width limited by maximum junction temperature 1
Gate-to-Source Voltage VGS -20 20 V 1
Power Dissipation PD 110 W 1
Single pulse avalanche energy EAS 450 mJ VDD=30V, L=0.3mH, RG=25Ω, Starting Tj=25℃ 1
Operating Junction Temperature TJ -55 150 ℃ Printed as '150,-55 to 150' for TJ,Tstg 1
Storage Temperature Range Tstg -55 150 ℃ Printed as '150,-55 to 150' for TJ,Tstg 1
Maximum Temperature for Soldering TL 300 ℃ 1
Thermal Resistance, Junction-to-Case RθJC 1.1 ℃/W 1
Thermal Resistance, Junction-to-Ambient RθJA 60 ℃/W 1

CAD (KiCad official)

  • Symbol: XRS80P06G
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: xrs80p06g-etched.step / xrs80p06g-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xrs80p06g.step / xrs80p06g.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XNRUSEMI datasheet (6 pp, sha256 c012ecde65651741, retrieved 2026-10-17, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF