component
XRS80P06G
Public Made by Adomby adom
XNRUSEMI MOSFETs, TO-263. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownXRS80P06G
XNRUSEMI · MOSFETs · TO-263
XRS80P06G from XNRUSEMI, in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage limited to ±20 V, with threshold of -1.3 to -2.3 V at ID=-250µA. |
| 2 | D | passive | Drain (middle lead, also the exposed tab); drain-to-source voltage -60 V, continuous current -80 A at TC=25 °C. |
| 3 | S | passive | Source; continuous diode forward current -80 A at TC=25 °C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XNRUSEMI |
| Package | TO-263 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain to Source Breakdown Voltage | VDSS | -60 | V | VGS=0V, ID=-250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS = -60V, VGS= 0V | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS =-20V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS =+20V | 2 | ||
| Gate Threshold Voltage | VGS(TH) | -1.3 | -1.8 | -2.3 | V | VDS=VGS, ID=-250µA | 2 |
| Drain-to-Source On-Resistance | RDS(ON)1 | 9 | 11 | mΩ | VGS=-10V, ID=-20A | 2 | |
| Drain-to-Source On-Resistance | RDS(ON)2 | 12 | 16 | mΩ | VGS=-4.5V, ID=-15A | 2 | |
| Forward Transconductance | gFS | 50 | S | VDS=-5V, ID=-20A | 2 | ||
| Diode Forward Current | IS | -80 | A | TC=25 °C | 2 | ||
| Diode Pulse Current | ISM | -320 | A | 2 | |||
| Diode Forward Voltage | VSD | -1.2 | V | IS=-6.0A, VGS=0V | 2 | ||
| Drain-Source Voltage (absolute maximum) | VDSS | -60 | V | 1 | |||
| Continuous Drain Current | ID | -80 | A | TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | -50 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | -320 | A | Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Gate-to-Source Voltage | VGS | -20 | 20 | V | 1 | ||
| Power Dissipation | PD | 110 | W | 1 | |||
| Single pulse avalanche energy | EAS | 450 | mJ | VDD=30V, L=0.3mH, RG=25Ω, Starting Tj=25℃ | 1 | ||
| Operating Junction Temperature | TJ | -55 | 150 | ℃ | Printed as '150，-55 to 150' for TJ,Tstg | 1 | |
| Storage Temperature Range | Tstg | -55 | 150 | ℃ | Printed as '150，-55 to 150' for TJ,Tstg | 1 | |
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Thermal Resistance, Junction-to-Case | RθJC | 1.1 | ℃/W | 1 | |||
| Thermal Resistance, Junction-to-Ambient | RθJA | 60 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
XRS80P06G - Footprint:
Package_TO_SOT_SMD:TO-263-2 - 3D model: TO-263 (KiCad packages3D, STEP)
- 3D model files:
xrs80p06g-etched.step/xrs80p06g-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xrs80p06g.step/xrs80p06g.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XNRUSEMI datasheet (6 pp, sha256
c012ecde65651741, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).