# XCH2N65AG

**XCH(旭昌辉)** · IC · SOT223-3L

XCH2N65AG from XCH(旭昌辉), in a SOT223-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V, with threshold voltage 2.0 to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 650 V with continuous drain current of 2.0 A at TC=25°C and pulsed drain current of 8.0 A. |
| 3 | S | passive | Source; connects to the body diode with continuous source current of 2 A and pulsed current of 8 A. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | XCH(旭昌辉) |
| Package | SOT223-3L |
| Category |  |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS |  |  | 650 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 2 | A |  | 1 |
| Continuous Drain Current | ID |  |  | 1.45 | A | TC = 100 °C | 1 |
| Pulsed Drain Current | IDM |  |  | 8 | A |  | 1 |
| Gate-to-Source Voltage | VGS | -30 |  | 30 | V |  | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 68 | mJ | a2: L=10.0mH, ID=3.7A, Start TJ=25℃ | 1 |
| Avalanche Energy, Repetitive | EAR |  |  | 6.4 | mJ | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 |
| Avalanche Current | IAR |  |  | 1.1 | A |  | 1 |
| Peak Diode Recovery dv/dt | dv/dt |  |  | 5 | V/ns | a3: ISD =2A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 |
| Power Dissipation | PD |  |  | 32 | W |  | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | ℃ |  | 1 |
| Maximum Temperature for Soldering | TL |  |  | 300 | ℃ |  | 1 |
| Drain to Source Breakdown Voltage | BVDSS | 650 |  |  | V | VGS=0V, ID=250µA | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 1 | µA | VDS=650V, VGS=0V, Ta=25℃ | 2 |
| Drain to Source Leakage Current | IDSS |  |  | 100 | µA | VDS=520V, VGS=0V, Ta=125℃ | 2 |
| Gate to Source Forward Leakage | IGSS(F) |  |  | 100 | nA | VGS=+30V | 2 |
| Gate to Source Reverse Leakage | IGSS(R) |  |  | -100 | nA | VGS=-30V | 2 |
| Drain-to-Source On-Resistance | RDS(ON) |  | 3.8 | 4.5 | Ω | VGS=10V, ID=1.0A; pulse width tp≤380µs, δ≤2% | 2 |
| Gate Threshold Voltage | VGS(TH) | 2 |  | 4 | V | VDS=VGS, ID=250µA; pulse width tp≤380µs, δ≤2% | 2 |
| Continuous Source Current (Body Diode) | IS |  |  | 2 | A |  | 3 |
| Maximum Pulsed Current (Body Diode) | ISM |  |  | 8 | A |  | 3 |
| Diode Forward Voltage | VSD |  |  | 1.5 | V | IS=2.0A, VGS=0V | 3 |
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ |  | 0.6 |  | V/℃ | ID=250uA, Reference 25℃ | 2 |
| Forward Transconductance | gfs |  | 2.6 |  | S | VDS=15V, ID=2A | 2 |
| Input Capacitance | Ciss |  | 290 |  | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Output Capacitance | Coss |  | 31 |  | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Reverse Transfer Capacitance | Crss |  | 6 |  | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 |
| Turn-on Delay Time | td(ON) |  | 8 |  | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 |
| Rise Time | tr |  | 6 |  | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 |
| Turn-Off Delay Time | td(OFF) |  | 30 |  | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 |
| Fall Time | tf |  | 11 |  | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 |
| Total Gate Charge | Qg |  | 9 |  | nC | ID=2.0A, VDD=325V, VGS=10V | 2 |
| Gate to Source Charge | Qgs |  | 1.5 |  | nC | ID=2.0A, VDD=325V, VGS=10V | 2 |
| Gate to Drain (Miller) Charge | Qgd |  | 4 |  | nC | ID=2.0A, VDD=325V, VGS=10V | 2 |
| Reverse Recovery Time | trr |  | 425 |  | ns | IS=2.0A, Tj=25°C, dIF/dt=100A/us, VGS=0V | 3 |
| Reverse Recovery Charge | Qrr |  | 1140 |  | nC |  | 3 |
| Junction-to-Case | RθJC |  | 3.57 |  | ℃/W |  | 3 |
| Junction-to-Ambient | RθJA |  | 62 |  | ℃/W |  | 3 |

## CAD (KiCad official)

- Symbol: `XCH2N65AG`
- Footprint: `Package_TO_SOT_SMD:SOT-223-3_TabPin2`
- 3D model: SOT223-3L (KiCad packages3D, STEP)
- 3D model files: `xch2n65ag-etched.step` / `xch2n65ag-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `xch2n65ag.step` / `xch2n65ag.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [XCH(旭昌辉) datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8756597724483596288) (6 pp, sha256 `2cb8b53d30fba53c`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/xch2n65ag-datasheet.pdf)