component
XCH2N65AG
Public Made by Adomby adom
XCH(旭昌辉) , SOT223-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownXCH2N65AG
XCH(旭昌辉) · IC · SOT223-3L
XCH2N65AG from XCH(旭昌辉), in a SOT223-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate; gate-to-source voltage rated ±30 V, with threshold voltage 2.0 to 4.0 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain; drain-to-source voltage rated 650 V with continuous drain current of 2.0 A at TC=25°C and pulsed drain current of 8.0 A. |
| 3 | S | passive | Source; connects to the body diode with continuous source current of 2 A and pulsed current of 8 A. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | XCH(旭昌辉) |
| Package | SOT223-3L |
| Category | |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-to-Source Voltage | VDSS | 650 | V | 1 | |||
| Continuous Drain Current | ID | 2 | A | 1 | |||
| Continuous Drain Current | ID | 1.45 | A | TC = 100 °C | 1 | ||
| Pulsed Drain Current | IDM | 8 | A | 1 | |||
| Gate-to-Source Voltage | VGS | -30 | 30 | V | 1 | ||
| Single Pulse Avalanche Energy | EAS | 68 | mJ | a2: L=10.0mH, ID=3.7A, Start TJ=25℃ | 1 | ||
| Avalanche Energy, Repetitive | EAR | 6.4 | mJ | a1: Repetitive rating; pulse width limited by maximum junction temperature | 1 | ||
| Avalanche Current | IAR | 1.1 | A | 1 | |||
| Peak Diode Recovery dv/dt | dv/dt | 5 | V/ns | a3: ISD =2A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ | 1 | ||
| Power Dissipation | PD | 32 | W | 1 | |||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | ℃ | 1 | ||
| Maximum Temperature for Soldering | TL | 300 | ℃ | 1 | |||
| Drain to Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250µA | 2 | ||
| Drain to Source Leakage Current | IDSS | 1 | µA | VDS=650V, VGS=0V, Ta=25℃ | 2 | ||
| Drain to Source Leakage Current | IDSS | 100 | µA | VDS=520V, VGS=0V, Ta=125℃ | 2 | ||
| Gate to Source Forward Leakage | IGSS(F) | 100 | nA | VGS=+30V | 2 | ||
| Gate to Source Reverse Leakage | IGSS(R) | -100 | nA | VGS=-30V | 2 | ||
| Drain-to-Source On-Resistance | RDS(ON) | 3.8 | 4.5 | Ω | VGS=10V, ID=1.0A; pulse width tp≤380µs, δ≤2% | 2 | |
| Gate Threshold Voltage | VGS(TH) | 2 | 4 | V | VDS=VGS, ID=250µA; pulse width tp≤380µs, δ≤2% | 2 | |
| Continuous Source Current (Body Diode) | IS | 2 | A | 3 | |||
| Maximum Pulsed Current (Body Diode) | ISM | 8 | A | 3 | |||
| Diode Forward Voltage | VSD | 1.5 | V | IS=2.0A, VGS=0V | 3 | ||
| Bvdss Temperature Coefficient | ΔBVDSS/ΔTJ | 0.6 | V/℃ | ID=250uA, Reference 25℃ | 2 | ||
| Forward Transconductance | gfs | 2.6 | S | VDS=15V, ID=2A | 2 | ||
| Input Capacitance | Ciss | 290 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Output Capacitance | Coss | 31 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 6 | pF | VGS=0V, VDS=25V, f=1.0MHz | 2 | ||
| Turn-on Delay Time | td(ON) | 8 | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 | ||
| Rise Time | tr | 6 | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 | ||
| Turn-Off Delay Time | td(OFF) | 30 | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 | ||
| Fall Time | tf | 11 | ns | ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω | 2 | ||
| Total Gate Charge | Qg | 9 | nC | ID=2.0A, VDD=325V, VGS=10V | 2 | ||
| Gate to Source Charge | Qgs | 1.5 | nC | ID=2.0A, VDD=325V, VGS=10V | 2 | ||
| Gate to Drain (Miller) Charge | Qgd | 4 | nC | ID=2.0A, VDD=325V, VGS=10V | 2 | ||
| Reverse Recovery Time | trr | 425 | ns | IS=2.0A, Tj=25°C, dIF/dt=100A/us, VGS=0V | 3 | ||
| Reverse Recovery Charge | Qrr | 1140 | nC | 3 | |||
| Junction-to-Case | RθJC | 3.57 | ℃/W | 3 | |||
| Junction-to-Ambient | RθJA | 62 | ℃/W | 3 |
CAD (KiCad official)
- Symbol:
XCH2N65AG - Footprint:
Package_TO_SOT_SMD:SOT-223-3_TabPin2 - 3D model: SOT223-3L (KiCad packages3D, STEP)
- 3D model files:
xch2n65ag-etched.step/xch2n65ag-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);xch2n65ag.step/xch2n65ag.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: XCH(旭昌辉) datasheet (6 pp, sha256
2cb8b53d30fba53c, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).