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XCH2N65AG

XCH(旭昌辉) · IC · SOT223-3L

XCH2N65AG from XCH(旭昌辉), in a SOT223-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-to-source voltage rated ±30 V, with threshold voltage 2.0 to 4.0 V at VDS=VGS, ID=250µA.
2 D passive Drain; drain-to-source voltage rated 650 V with continuous drain current of 2.0 A at TC=25°C and pulsed drain current of 8.0 A.
3 S passive Source; connects to the body diode with continuous source current of 2 A and pulsed current of 8 A.

Key specifications

Parameter Value
Manufacturer XCH(旭昌辉)
Package SOT223-3L
Category
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-to-Source Voltage VDSS 650 V 1
Continuous Drain Current ID 2 A 1
Continuous Drain Current ID 1.45 A TC = 100 °C 1
Pulsed Drain Current IDM 8 A 1
Gate-to-Source Voltage VGS -30 30 V 1
Single Pulse Avalanche Energy EAS 68 mJ a2: L=10.0mH, ID=3.7A, Start TJ=25℃ 1
Avalanche Energy, Repetitive EAR 6.4 mJ a1: Repetitive rating; pulse width limited by maximum junction temperature 1
Avalanche Current IAR 1.1 A 1
Peak Diode Recovery dv/dt dv/dt 5 V/ns a3: ISD =2A, di/dt≤100A/us, VDD≤BVDS, Start TJ=25℃ 1
Power Dissipation PD 32 W 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 ℃ 1
Maximum Temperature for Soldering TL 300 ℃ 1
Drain to Source Breakdown Voltage BVDSS 650 V VGS=0V, ID=250µA 2
Drain to Source Leakage Current IDSS 1 µA VDS=650V, VGS=0V, Ta=25℃ 2
Drain to Source Leakage Current IDSS 100 µA VDS=520V, VGS=0V, Ta=125℃ 2
Gate to Source Forward Leakage IGSS(F) 100 nA VGS=+30V 2
Gate to Source Reverse Leakage IGSS(R) -100 nA VGS=-30V 2
Drain-to-Source On-Resistance RDS(ON) 3.8 4.5 Ω VGS=10V, ID=1.0A; pulse width tp≤380µs, δ≤2% 2
Gate Threshold Voltage VGS(TH) 2 4 V VDS=VGS, ID=250µA; pulse width tp≤380µs, δ≤2% 2
Continuous Source Current (Body Diode) IS 2 A 3
Maximum Pulsed Current (Body Diode) ISM 8 A 3
Diode Forward Voltage VSD 1.5 V IS=2.0A, VGS=0V 3
Bvdss Temperature Coefficient ΔBVDSS/ΔTJ 0.6 V/℃ ID=250uA, Reference 25℃ 2
Forward Transconductance gfs 2.6 S VDS=15V, ID=2A 2
Input Capacitance Ciss 290 pF VGS=0V, VDS=25V, f=1.0MHz 2
Output Capacitance Coss 31 pF VGS=0V, VDS=25V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 6 pF VGS=0V, VDS=25V, f=1.0MHz 2
Turn-on Delay Time td(ON) 8 ns ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω 2
Rise Time tr 6 ns ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω 2
Turn-Off Delay Time td(OFF) 30 ns ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω 2
Fall Time tf 11 ns ID=2.0A, VDD=325V, VGS=10V, RG=9.1Ω 2
Total Gate Charge Qg 9 nC ID=2.0A, VDD=325V, VGS=10V 2
Gate to Source Charge Qgs 1.5 nC ID=2.0A, VDD=325V, VGS=10V 2
Gate to Drain (Miller) Charge Qgd 4 nC ID=2.0A, VDD=325V, VGS=10V 2
Reverse Recovery Time trr 425 ns IS=2.0A, Tj=25°C, dIF/dt=100A/us, VGS=0V 3
Reverse Recovery Charge Qrr 1140 nC 3
Junction-to-Case RθJC 3.57 ℃/W 3
Junction-to-Ambient RθJA 62 ℃/W 3

CAD (KiCad official)

  • Symbol: XCH2N65AG
  • Footprint: Package_TO_SOT_SMD:SOT-223-3_TabPin2
  • 3D model: SOT223-3L (KiCad packages3D, STEP)
  • 3D model files: xch2n65ag-etched.step / xch2n65ag-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); xch2n65ag.step / xch2n65ag.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: XCH(旭昌辉) datasheet (6 pp, sha256 2cb8b53d30fba53c, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF