component
WSP6956
Public Made by Adomby adom
Winsok Semicon MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 23d ago |
| viewers | 23d ago |
| package.json | 23d ago |
| page.json | 17d ago |
| README.md | 17d ago |
| wsp6956-etched.glb | 23d ago |
| wsp6956-etched.step | 23d ago |
| wsp6956-hero.glb | 23d ago |
| wsp6956-hero.overlay.json | 23d ago |
| wsp6956.glb | 23d ago |
| wsp6956.kicad_mod | 23d ago |
| wsp6956.kicad_sym | 23d ago |
| wsp6956.lbr | 23d ago |
| wsp6956.step | 23d ago |
WSP6956
Winsok Semicon · MOSFETs · SOP-8
WSP6956 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel). |
| 2 | G1 | input | Gate of MOSFET 1, VGS rated ±20V maximum. |
| 3 | S2 | passive | Source of MOSFET 2 (N-channel). |
| 4 | G2 | input | Gate of MOSFET 2, VGS rated ±20V maximum. |
| 5 | D2 | passive | Drain of MOSFET 2, VDSS 60V, 10A continuous at TA=25°C. |
| 6 | D2 | passive | Drain of MOSFET 2, VDSS 60V, 10A continuous at TA=25°C. |
| 7 | D1 | passive | Drain of MOSFET 1, VDSS 60V, 10A continuous at TA=25°C. |
| 8 | D1 | passive | Drain of MOSFET 1, VDSS 60V, 10A continuous at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDSS | 60 | V | 1 | |||
| Gate-Source Voltage | VGSS | -20 | 20 | V | 1 | ||
| Maximum Junction Temperature | TJ | 150 | °C | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | °C | 1 | ||
| Diode Continuous Forward Current | IS | 5 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 10 | A | TA=25°C | 1 | ||
| Continuous Drain Current | ID | 8 | A | TA=70°C | 1 | ||
| Pulsed Drain Current | IDM | 38 | A | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 3.5 | W | TA=25°C | 1 | ||
| Maximum Power Dissipation | PD | 2.2 | W | TA=70°C | 1 | ||
| Avalanche Current, Single pulse | IAS | 27 | A | L=0.1mH | 1 | ||
| Avalanche Energy, Single pulse | EAS | 36 | mJ | L=0.1mH | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 35 | °C/W | t 10s | 1 | ||
| Thermal Resistance Junction to Ambient | RθJA | 70 | °C/W | Steady state | 1 | ||
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, IDS=250µA | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS=48V, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 30 | µA | TJ=85°C | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2.5 | V | VDS=VGS, IDS=250µA | 2 | ||
| Gate Leakage Current | IGSS | -100 | 100 | nA | VGS=±20V, VDS=0V | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 15 | 20 | mΩ | VGS=10V, IDS=10A | 2 | |
| Drain-Source On-state Resistance | RDS(ON) | 18 | 24 | mΩ | VGS=4.5V, IDS=9A | 2 | |
| Diode Forward Voltage | VSD | 0.8 | 1.3 | V | ISD=10A, VGS=0V | 2 | |
| Input Capacitance | Ciss | 1370 | 1780 | pF | VGS=0V, VDS=30V, Frequency=1.0MHz | 2 | |
| Turn-on Delay Time | td(ON) | 14 | 26 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 | |
| Turn-on Rise Time | tr | 8 | 15 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 | |
| Turn-off Delay Time | td(OFF) | 38 | 69 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 | |
| Turn-off Fall Time | tf | 12 | 22 | ns | VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω | 2 | |
| Total Gate Charge | Qg | 26 | 37 | nC | VDS=30V, VGS=10V, IDS=10A | 2 | |
| Total Gate Charge | Qg | 12 | nC | VDS=30V, VGS=4.5V, IDS=10A | 2 | ||
| Reverse Recovery Time | trr | 21 | ns | ISD=10A, dISD/dt=100A/µs | 2 | ||
| Reverse Recovery Charge | Qrr | 22 | nC | 2 | |||
| Gate Resistance | RG | 2.5 | Ω | VGS=0V, VDS=0V, f=1MHz | 2 | ||
| Output Capacitance | Coss | 135 | pF | 2 | |||
| Reverse Transfer Capacitance | Crss | 60 | pF | 2 | |||
| Gate-Source Charge | Qgs | 5 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 5 | nC | 2 |
CAD (KiCad official)
- Symbol:
WSP6956 - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files:
wsp6956-etched.step/wsp6956-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);wsp6956.step/wsp6956.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: Winsok Semicon datasheet (7 pp, sha256
b71122c5c4a98b46, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).