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Contents

README

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WSP6956

Winsok Semicon · MOSFETs · SOP-8

WSP6956 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of MOSFET 1 (N-channel).
2 G1 input Gate of MOSFET 1, VGS rated ±20V maximum.
3 S2 passive Source of MOSFET 2 (N-channel).
4 G2 input Gate of MOSFET 2, VGS rated ±20V maximum.
5 D2 passive Drain of MOSFET 2, VDSS 60V, 10A continuous at TA=25°C.
6 D2 passive Drain of MOSFET 2, VDSS 60V, 10A continuous at TA=25°C.
7 D1 passive Drain of MOSFET 1, VDSS 60V, 10A continuous at TA=25°C.
8 D1 passive Drain of MOSFET 1, VDSS 60V, 10A continuous at TA=25°C.

Key specifications

Parameter Value
Manufacturer Winsok Semicon
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDSS 60 V 1
Gate-Source Voltage VGSS -20 20 V 1
Maximum Junction Temperature TJ 150 °C 1
Storage Temperature Range TSTG -55 150 °C 1
Diode Continuous Forward Current IS 5 A TA=25°C 1
Continuous Drain Current ID 10 A TA=25°C 1
Continuous Drain Current ID 8 A TA=70°C 1
Pulsed Drain Current IDM 38 A TA=25°C 1
Maximum Power Dissipation PD 3.5 W TA=25°C 1
Maximum Power Dissipation PD 2.2 W TA=70°C 1
Avalanche Current, Single pulse IAS 27 A L=0.1mH 1
Avalanche Energy, Single pulse EAS 36 mJ L=0.1mH 1
Thermal Resistance Junction to Ambient RθJA 35 °C/W t 10s 1
Thermal Resistance Junction to Ambient RθJA 70 °C/W Steady state 1
Drain-Source Breakdown Voltage BVDSS 60 V VGS=0V, IDS=250µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS=48V, VGS=0V 2
Zero Gate Voltage Drain Current IDSS 30 µA TJ=85°C 2
Gate Threshold Voltage VGS(th) 2.5 V VDS=VGS, IDS=250µA 2
Gate Leakage Current IGSS -100 100 nA VGS=±20V, VDS=0V 2
Drain-Source On-state Resistance RDS(ON) 15 20 mΩ VGS=10V, IDS=10A 2
Drain-Source On-state Resistance RDS(ON) 18 24 mΩ VGS=4.5V, IDS=9A 2
Diode Forward Voltage VSD 0.8 1.3 V ISD=10A, VGS=0V 2
Input Capacitance Ciss 1370 1780 pF VGS=0V, VDS=30V, Frequency=1.0MHz 2
Turn-on Delay Time td(ON) 14 26 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-on Rise Time tr 8 15 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-off Delay Time td(OFF) 38 69 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Turn-off Fall Time tf 12 22 ns VDD=30V, RL=30Ω, IDS=1A, VGEN=10V, RG=6Ω 2
Total Gate Charge Qg 26 37 nC VDS=30V, VGS=10V, IDS=10A 2
Total Gate Charge Qg 12 nC VDS=30V, VGS=4.5V, IDS=10A 2
Reverse Recovery Time trr 21 ns ISD=10A, dISD/dt=100A/µs 2
Reverse Recovery Charge Qrr 22 nC 2
Gate Resistance RG 2.5 Ω VGS=0V, VDS=0V, f=1MHz 2
Output Capacitance Coss 135 pF 2
Reverse Transfer Capacitance Crss 60 pF 2
Gate-Source Charge Qgs 5 nC 2
Gate-Drain Charge Qgd 5 nC 2

CAD (KiCad official)

  • Symbol: WSP6956
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: wsp6956-etched.step / wsp6956-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); wsp6956.step / wsp6956.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Winsok Semicon datasheet (7 pp, sha256 b71122c5c4a98b46, retrieved 2026-10-09, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF