# WSP4606

**Winsok Semicon** · MOSFETs · SOP-8

WSP4606 from Winsok Semicon, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (Q1), rated VDS 30V and ID 7A. |
| 2 | G1 | input | Gate of the N-channel MOSFET (Q1), with VGS limit of ±20V. |
| 3 | S2 | passive | Source of the P-channel MOSFET (Q2), rated VDS -30V and ID -6A. |
| 4 | G2 | input | Gate of the P-channel MOSFET (Q2), with VGS limit of ±20V. |
| 5 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated VDS -30V, pulsed drain current -12A; pins 5 and 6 are both D2. |
| 6 | D2 | passive | Drain of the P-channel MOSFET (Q2), rated VDS -30V, pulsed drain current -12A; pins 5 and 6 are both D2. |
| 7 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated VDS 30V, pulsed drain current 20A; pins 7 and 8 are both D1. |
| 8 | D1 | passive | Drain of the N-channel MOSFET (Q1), rated VDS 30V, pulsed drain current 20A; pins 7 and 8 are both D1. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | Winsok Semicon |
| Package | SOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch) | VDS |  |  | 30 | V |  | 1 |
| Drain-Source Voltage (P-ch) | VDS | -30 |  |  | V |  | 1 |
| Gate-Source Voltage (N-ch) | VGS | -20 |  | 20 | V |  | 1 |
| Gate-Source Voltage (P-ch) | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current (N-ch) | ID@TC=25℃ |  |  | 7 | A | VGS @ 10V | 1 |
| Continuous Drain Current (P-ch) | ID@TC=25℃ | -6 |  |  | A | VGS @ 10V | 1 |
| Continuous Drain Current at TC=100℃ (N-ch) | ID@TC=100℃ |  |  | 6 | A | VGS @ 10V | 1 |
| Continuous Drain Current at TC=100℃ (P-ch) | ID@TC=100℃ | -4 |  |  | A | VGS @ 10V | 1 |
| Pulsed Drain Current (N-ch) | IDM |  |  | 20 | A |  | 1 |
| Pulsed Drain Current (P-ch) | IDM | -12 |  |  | A |  | 1 |
| Single Pulse Avalanche Energy (N-ch) | EAS |  |  | 72 | mJ | Note 3: VDD=25V, VGS=10V, L=0.1mH, IAS=10A | 1 |
| Single Pulse Avalanche Energy (P-ch) | EAS |  |  | 59 | mJ | Note 3: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-10A | 1 |
| Avalanche Current (N-ch) | IAS |  |  | 21 | A |  | 1 |
| Avalanche Current (P-ch) | IAS | -19 |  |  | A |  | 1 |
| Total Power Dissipation (N-ch) | PD@TC=25℃ |  |  | 2.5 | W |  | 1 |
| Total Power Dissipation (P-ch) | PD@TC=25℃ |  |  | 2.08 | W |  | 1 |
| Storage Temperature Range (N-ch) | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Storage Temperature Range (P-ch) | TSTG | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range (N-ch) | TJ | -55 |  | 150 | ℃ |  | 1 |
| Operating Junction Temperature Range (P-ch) | TJ | -55 |  | 150 | ℃ |  | 1 |
| Thermal Resistance Junction-Ambient | RθJA |  |  | 85 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 |
| Thermal Resistance Junction-Case | RθJC |  |  | 50 | ℃/W | Note 1: surface mounted on 1 inch2 FR-4 board, 2OZ copper, t<10sec | 1 |
| Drain-Source Breakdown Voltage (N-ch) | BVDSS | 30 |  |  | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) |  | 18 | 28 | mΩ | VGS=10V, ID=6A | 2 |
| Static Drain-Source On-Resistance (N-ch) | RDS(ON) |  | 25 | 32 | mΩ | VGS=4.5V, ID=5A | 2 |
| Gate Threshold Voltage (N-ch) | VGS(th) | 1 | 1.5 | 2.5 | V |  | 2 |
| Drain-Source Leakage Current at TJ=25℃ (N-ch) | IDSS |  |  | 1 | uA | VDS=30V, VGS=0V, TJ=25℃ | 2 |
| Drain-Source Leakage Current at TJ=55℃ (N-ch) | IDSS |  |  | 5 | uA | VDS=30V, VGS=0V, TJ=55℃ | 2 |
| Gate-Source Leakage Current (N-ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 2 |
| Single Pulse Avalanche Energy (N-ch, guaranteed) | EAS | 16 |  |  | mJ | VDD=25V, L=0.1mH, IAS=10A | 2 |
| Continuous Source Current (N-ch) | IS |  |  | 7 | A |  | 2 |
| Pulsed Source Current (N-ch) | ISM |  |  | 20 | A | VG=VD=0V, Force Current | 2 |
| Diode Forward Voltage (N-ch) | VSD |  |  | 1.2 | V | VGS=0V, IS=5A, TJ=25℃ | 2 |
| Drain-Source Breakdown Voltage (P-ch) | BVDSS | -30 |  |  | V | VGS=0V, ID=-250uA | 3 |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) |  | 30 | 38 | mΩ | VGS=-10V, ID=-6A | 3 |
| Static Drain-Source On-Resistance (P-ch) | RDS(ON) |  | 48 | 58 | mΩ | VGS=-4.5V, ID=-3A | 3 |
| Gate Threshold Voltage (P-ch) | VGS(th) | -1 | -1.5 | -2.5 | V |  | 3 |
| Drain-Source Leakage Current at TJ=25℃ (P-ch) | IDSS |  |  | 1 | uA | VDS=-24V, VGS=0V, TJ=25℃ | 3 |
| Drain-Source Leakage Current at TJ=55℃ (P-ch) | IDSS |  |  | 5 | uA | VDS=-24V, VGS=0V, TJ=55℃ | 3 |
| Gate-Source Leakage Current (P-ch) | IGSS | -100 |  | 100 | nA | VGS=±20V, VDS=0V | 3 |
| Single Pulse Avalanche Energy (P-ch, guaranteed) | EAS | 16 |  |  | mJ | VDD=-25V, L=0.1mH, IAS=-10A | 3 |
| Continuous Source Current (P-ch) | IS |  |  | -6 | A |  | 3 |
| Pulsed Source Current (P-ch) | ISM |  |  | -12 | A | VG=VD=0V, Force Current | 3 |
| Diode Forward Voltage (P-ch) | VSD |  |  | -1.2 | V | VGS=0V, IS=-6A, TJ=25℃ | 3 |
| BVDSS Temperature Coefficient (N-ch) | △BVDSS/△TJ |  | 0.034 |  | V/℃ | Reference to 25℃, ID=1mA | 2 |
| VGS(th) Temperature Coefficient (N-ch) | △VGS(th) |  | -5.8 |  | mV/℃ | VGS=VDS, ID=250uA | 2 |
| Forward Transconductance (N-ch) | gfs |  | 10 |  | S | VDS=15V, ID=5A | 2 |
| Gate Resistance (N-ch) | Rg |  | 2.5 |  | Ω | VDS=24V, VGS=0V, f=1MHz | 2 |
| Total Gate Charge (4.5V) (N-ch) | Qg |  | 7.2 |  | nC | VDS=20V, VGS=4.5V, ID=6A | 2 |
| Gate-Source Charge (N-ch) | Qgs |  | 1.4 |  | nC | VDS=20V, VGS=4.5V, ID=6A | 2 |
| Gate-Drain Charge (N-ch) | Qgd |  | 2.2 |  | nC | VDS=20V, VGS=4.5V, ID=6A | 2 |
| Input Capacitance (N-ch) | Ciss |  | 550 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Output Capacitance (N-ch) | Coss |  | 68 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| Reverse Transfer Capacitance (N-ch) | Crss |  | 55 |  | pF | VDS=25V, VGS=0V, f=1MHz | 2 |
| BVDSS Temperature Coefficient (P-ch) | △BVDSS/△TJ |  | -0.085 |  | V/℃ | Reference to 25℃, ID=-1mA | 3 |
| VGS(th) Temperature Coefficient (P-ch) | △VGS(th) |  | 0.375 |  | mV/℃ | VGS=VDS, ID=-250uA | 3 |
| Forward Transconductance (P-ch) | gfs |  | 6 |  | S | VDS=-10V, ID=-6A | 3 |
| Total Gate Charge (-4.5V) (P-ch) | Qg |  | 6.4 |  | nC | VDS=-20V, VGS=-4.5V, ID=-6A | 3 |
| Input Capacitance (P-ch) | Ciss |  | 645 |  | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |
| Reverse Transfer Capacitance (P-ch) | Crss |  | 105 |  | pF | VDS=-25V, VGS=0V, f=1MHz | 3 |

## CAD (KiCad official)

- Symbol: `WSP4606`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SOP-8 (KiCad packages3D, STEP)
- 3D model files: `wsp4606-etched.step` / `wsp4606-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `wsp4606.step` / `wsp4606.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [Winsok Semicon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586176989716238336) (8 pp, sha256 `5e88037c1fac0b17`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/wsp4606-datasheet.pdf)